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小野 倫也

ALUMNI 2026年8月現在、筑波大学が主たる所属機関ではありません

Ono, Tomoya

神戸大学 , 大学院工学研究科 電気電子工学専攻 , 教授
Kobe University , Graduate School of Engineering, Department of Electrical and Electronic Engineering , Professor

  1. 1. Epitaxial FePd thin films on SrTiO3(001): Kinetics of single-variant L10 ordering and solid-state dewetting Hanuma Kumar Dara; Samuel Vergara; Amram Azulay; Mitsuharu Uemoto (+4 著者) Amit Kohn
      Acta Materialia 314: 122333 (2026)
  2. 2. Density functional theory study on effect of nitrided regions introduced by nitridation processes on carrier-conduction property of 4H-SiC(0001)/SiO2 interface Nahoto Funaki; Kosei Sugiyama; Mitsuharu Uemoto; Tomoya Ono
      Japanese Journal of Applied Physics 65: 120904 (2026) Semantic Scholar
  3. 3. Effects of inserted methylene groups on structure and flexibility of molecule junction system Miku Furushima; Tomoki Tahara; Mitsuharu Uemoto; Yutaka MajimaTomoya Ono
      Japanese Journal of Applied Physics 65: 124501 (2026)
  4. 4. Theoretical investigation of interface atomic structure of graphene on NiFe alloy substrate Naohiro Matsumoto; Ryusuke Endo; Mitsuharu Uemoto; Tomoya Ono
      Journal of Applied Physics 138: (2025)
  5. 5. GPU acceleration of overbridging boundary matching method without Green's functions based on real-space finite-difference method Takanori Akamatsu; Mitsuharu Uemoto; Yoshiyuki Egami; Tomoya Ono
      Computer Physics Communications 312: 109585 (2025) Semantic Scholar
  6. 6. Insertion of methylene groups into functional molecules for high thermal stability and superior functionality of single-molecule transistors: a first-principles study Miku Furushima; Mitsuharu Uemoto; Dongbao Yin; Seiichiro Izawa (+2 著者) Tomoya Ono
      NEW JOURNAL OF CHEMISTRY 48: 16008 (2024)
  7. 7. DFT study on relation between electronic structure and areal N atom densityat 4H-SiC/SiO2 after NO annealing Nahoto Funaki; Kosei Sugiyama; Mitsuharu Uemoto; Tomoya Ono
      Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)
  8. 8. Negative Differential Resistance in Single‐Molecule Junctions Based on Heteroepitaxial Spherical Au/Pt Nanogap Electrodes Dongbao Yin; Miku Furushima; Eiji Tsuchihata; Seiichiro Izawa (+2 著者) Yutaka Majima
      Advanced Electronic Materials 11: (2024) Semantic Scholar
  9. 9. GPU acceleration of conjugate gradient method obtaining Green's function for transport-property calculation Takanori Akamatsu; Mitsuharu Uemoto; Yoshiyuki Egami; Tomoya Ono
      Computer Physics Communications 295: 108989 (2024) Semantic Scholar
  10. 10. First-principle study of spin transport property in L10-FePd(001)/graphene heterojunction Hayato Adachi; Ryusuke Endo; Hikari Shinya; Hiroshi Naganuma (+1 著者) Mitsuharu Uemoto
      Journal of Applied Physics 135: (2024) Semantic Scholar
  11. 11. Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps Mitsuharu Uemoto; Nahoto Funaki; Kazuma Yokota; Takuji HosoiTomoya Ono
      Applied Physics Express (2024) Semantic Scholar
  12. 12. Valley filters using graphene blister defects from first principles Mitsuharu Uemoto; Masaki Nishiura; Tomoya Ono
      Journal of Physics: Condensed Matter (2023) Semantic Scholar
  13. 13. Twist pz Orbital and Spin Moment of the Wavy-Graphene/L10-FePd Moiré Interface H. Naganuma; M. Uemoto; H. Adachi; H. Shinya (+7 著者) K. Amemiya
      The Journal of Physical Chemistry C 127: 11481 (2023) Semantic Scholar
  14. 14. Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO2 interface after NO annealing Naoki Komatsu; Mizuho Ohmoto; Mitsuharu Uemoto; Tomoya Ono
      Journal of Applied Physics 132: 155701 (2022) Semantic Scholar
  15. 15. Unique Electrical Signature of Phosphate for Specific Single-Molecule Detection of Peptide Phosphorylation. Takanori Harashima; Yoshiyuki Egami; Kanji Homma; Yuki Jono (+3 著者) Tomoaki Nishino
      Journal of the American Chemical Society 144: 17449 (2022) Semantic Scholar
  16. 16. Density functional study of twisted graphene L10-FePd heterogeneous interface Mitsuharu Uemoto; Hayato Adachi; Hiroshi Naganuma; Tomoya Ono
      Journal of Applied Physics 132: 095301 (2022) Semantic Scholar
  17. 17. Theoretical investigation of vacancy related defects at 4H-SiC(0001̅)/SiO2 interface after wet oxidation Mukai Tsunasaki; Tomoya Ono; Mitsuharu Uemoto
      Japanese Journal of Applied Physics 61: SH1001 (2022) Semantic Scholar
  18. 18. First-Principles Study on Structure and Anisotropy of High N-atom Density Layer in 4H-SiC Mitsuharu Uemoto; Naoki Komatsu; Yoshiyuk Egami; Tomoya Ono
      Journal of Physical Society of Japan 90: 124713 (2021)
  19. 19. 第一原理計算によるwet酸化SiC(000-1)/SiO2界面の欠陥構造解析 綱崎 夢開; 民部 優輝; 植本 光治; 小野 倫也
      JSAP Annual Meetings Extended Abstracts 2021.1: 2697 (2021)
  20. 20. Calculation of the Green's function in the scattering region for first-principles electron-transport simulations Yoshiyuki Egami; Shigeru Tsukamoto; Tomoya Ono
      Physical Review Research 3: 013038 (2021) Semantic Scholar
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  1. 1. 超精密加工と表面科学 小野,倫也 (担当:分担執筆, 範囲:表面界面物性シミュレーション)
    2014年3月
  2. 2. 計算機マテリアルデザイン入門 広瀬, 喜久治; 小野, 倫也 (担当:分担執筆, 範囲:応用編RSPACE-04－ナノ構造体の電気伝導特性－)
    大阪大学出版会 2005年9月
  3. 3. 計算機マテリアルデザイン入門 広瀬, 喜久治; 小野, 倫也 (担当:分担執筆, 範囲:基礎編RSPACE-04－ナノ構造体の電気伝導特性－)
    大阪大学出版会 2005年1月
  4. 4. FIRST-PRINCIPLES CALCULATIONS IN REAL-SPACE FORMALISM --Electronic Configurations and Transport Properties of Nanostructures-- Hirose, Kikuji; Ono, Tomoya; Fujimoto, Yoshitaka; Tsukamoto, Shigeru
    2005年1月
  1. 1. DFT calculation for electronic structure and carrier scattering property at SiC-MOS interface Ono,Tomoya
    European Advanced Energy Materials Congress 2018年3月25日 招待有り
  2. 2. Efficient and Scalable Calculation of Complex Band Structure Using Sakurai-Sugiura Method Iwase, Shigeru; Futamura, Yasunori; Imakura, Akira; Sakurai, Tetsuya; Ono, Tomoya
    International Conference for High Performance Computing, Networking, Storage and Analysis (SC17) 2017年11月13日
  3. 3. 第一原理計算によるデバイス用界面の電子状態とキャリア伝導解析 小野,倫也
    日本物理学会2017年秋季大会 2017年9月21日 招待有り
  4. 4. Nonlinear Sakurai-Sugiura method for electronic transport calculation Sakurai, Tetsuya; Futamura, Yasunori; Imakura, Akira; Iwase, Shigeru; Ono, Tomoya
    2017 Meeting of the International Linear Algebra Society 2017年7月24日
  5. 5. Nonlinear Sakurai-Sugiura method for complex band structure calculation on KNL cluster Sakurai, Tetsuya; Futamura, Yasunori; Imakura, Akira; Shigeru, Iwase; Ono, Tomoya
    The Platform for Advanced Scientific Compuging (PASC) Conference 2017年6月26日
  6. 6. Density functional theory calculation for interface electronic structure of SiC power electronic devices Ono,Tomoya
    EMN Meeting on Quantum 2017年6月18日 招待有り
  7. 7. 第一原理計算と高速計算機を用いた材料探索・デバイス設計 小野,倫也
    情報機構セミナー 2017年6月13日 招待有り
  8. 8. First-principles study on atomic and electronic structures of 4HSiC(0001)/SiO interface Ono, Tomoya; kirkham, Christopher James
    APS March Meeting 2017 2017年3月13日
  9. 9. First-Principles Study on Electron Conduction at 4H-SiC(0001)/SiO2 Interface Ono, Tomoya; Kirkham, Christopher James; Iwase, Shigeru
    Pacific Rim Meeting on Electrochemical and Solid-State Science 2016 2016年10月2日 招待有り
  10. 10. First-principles study on carrier scattering property at 4H-SiC(0001)/SiO2 Ono, Tomoya; Kirkham, Christopher James; Iwase, Shigeru
    2016 International Conference on Solid State Devices and Materials 2016年9月26日
  11. 11. SiC酸化過程とMOS界面電子状態の第一原理シミュレーション 小野,倫也
    応用物理学会先進パワー半導体分科会 第1回個別討論会 「SiC酸化メカニズムと界面欠陥」 2016年8月4日 招待有り
  12. 12. Density functional theory study on transport property of nanomaterials Ono, Tomoya
    5th International Conference from Nanoparticles and Nanomaterials to Nanodevices and Nanosystems (IC4N) 2016年6月26日 招待有り
  13. 13. Density functional theory calculation for transport property of carbon nanostructures Ono,Tomoya
    EMN Meeting on Carbon Nanostructures 2016年3月27日 招待有り
  14. 14. Ab initio investigations for interface electronic structures of SiC-MOS Ono,Tomoya; Kirkham,Christopher
    International Workshop on Dielectric Thin Films for Future Electron Devices – Science and Technology – 2015年11月2日 招待有り
  15. 15. First-Principles Calculations using Real-Space Finite-Difference Method Ono,Tomoya
    Advances in Modeling of Nano Materials 2015年6月14日 招待有り
  16. 16. 第一原理計算を用いたナノデバイスの機能予測 小野,倫也
    応用物理学会関西支部平成26年度第2回講演会「シミュレーションが先導するエレクトロニクス・フォトニクス研究 ～関西発イノベーションと若手からの発信～」 2014年11月12日 招待有り
  17. 17. First-principles calculation on transport properties of carbon nanotubes and fullerenes Ono,Tomoya
    International Workshop of Computational Nano-Materials Design on Green Energy, JSPS Core-to-Core Program Workshop 2014年6月1日 招待有り

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