小野 倫也
Ono, Tomoya
神戸大学 , 大学院工学研究科 電気電子工学専攻 , 教授 Kobe University , Graduate School of Engineering, Department of Electrical and Electronic Engineering , Professor
関連記事はまだありません。
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61.
Strong gold atom strands formed by incorporation of carbon atoms
Oshima, Yoshifumi; Kurui, Yoshihiko; Nguyen, Huy Duy; Ono, TomoyaTakayanagi, Kunio
Physical Review B 84: 035401 (2011) Semantic Scholar
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62.
In-situ TEM Observation of Synthesizing Long Gold Atom Strand
Oshima, Yoshifumi; Kurui, Yoshihiko; Nguyen, Hu Duy; Ono, TomoyaTakayanagi, Kunio
Microscopy and Microanalysis 17: 488 (2011) Semantic Scholar
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63.
First-Principles Study on Structural Properties of GeO2 and SiO2 under Compression and Expansion Pressure
Saito, Shoichiro; Ono, Tomoya
Jpn. J. Appl. Phys. 50: 021503 (2011) Semantic Scholar
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64.
First-Principles Study on Electronic Structure of Dangling Bond at Ge/GeO2 Interfaces
Ono, Tomoya; Saito, Shoichiro
Appl. Phys. Exp. 4: 021303 (2011) Semantic Scholar
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65.
Time-saving first-principles calculation method for electron transport between jellium electrodes
Egami, Yoshiyuki; Ono, Tomoya; Hirose, Kikuji
Phys. Rev. E 82: 056706 (2010) Semantic Scholar
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66.
Real-space electronic structure calculations with full-potential all-electron precision for transition metals
Ono, Tomoya; Heide, Marcus; Atodiresei, Nicolae; Baumeister, Paul (+1 著者) Bluegel, Stefan
Phys. Rev. B 82: 205115 (2010) Semantic Scholar
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67.
Polarization of AlN Nanotubes: A First-Principles Study Using Wannier Functions
Saito, Shoichiro; Ota, Tadashi; Otsuka, Jun; Ono, Tomoya
Journal of Computational and Theoretical Nanoscience 6: 2624 (2009) Semantic Scholar
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68.
First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces
Saito, Shoichiro; Hosoi, Takuji; Watanabe, Heiji; Ono, Tomoya
Applied Physics Letters 95: 011908 (2009) Semantic Scholar
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69.
First-principles study of leakage current through a Si/SiO2 interface
ONO, Tomoya
Phys. Rev. B 79: 195326 (2009) Semantic Scholar
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70.
First-principles study on even-odd conductance oscillation of Pt atomic nanowires
Ono, Tomoya
The Journal of Physical Chemistry C 113: 6256 (2009) Semantic Scholar
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71.
First-Principles Study on Magnetic Ordering of Al Infinite Single-row Atomic Wire
Ota, Tadashi; Hirose, Kikuji; Ono, Tomoya
Journal of Physics: Condensed Matter 21: 064240 (2009) Semantic Scholar
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72.
First-principles study on electronic structure of fullerene polymers
Kitajima, Hideki; Egami, Yoshiyuki; Nakayama, Hiroyuki; Hirose, KikujiOno, Tomoya
Surface Interface Analysis 40: 1067 (2008) Semantic Scholar
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73.
First-principles study on STM current images of C2H2-adsorbed Si(001) surface
Egami, Yoshiyuki; Ono, Tomoya; Hirose, Kikuji
Surface Interface Analysis 40: 1063 (2008) Semantic Scholar
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74.
First-principles calculation of electronic polarization of III-V nanotubes
Otsuka, Jun; Ono, Tomoya; Hirose, Kikuji
Phys. Rev. B 78: 035426 (2008) Semantic Scholar
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75.
A Path-Integration Calculation Method Based on the Real-Space Finite-Difference Scheme
Goto, Hidekazu; Ono, Tomoya; Hirose, Kikuji
Journal of Physics: Condensed Matter 19: 365205 (2007) Semantic Scholar
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76.
Real-Space Density-Functional Calculations for Transport Properties of Nanostructures
Ono, Tomoya; Hirose, Kikuji
Journal of Computational and Theoretical Nanoscience 4: 840 (2007) Semantic Scholar
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77.
First-principles study on electronic structures and dielectric properties of Si/SiO2 interface
Ono, Tomoya; Kutsuki, Katsuhiro; Egami, Yoshiyuki; Watanabe, HeijiHirose, Kikuji
Journal of Physics: Condensed Matter 19: 365202 (2007) Semantic Scholar
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78.
Relationship between Geometric Structure and Conductance Oscillation in Nanowires
Egami, Yoshiyuki; Aiba, Shuichiro; Ono, Tomoya; Hirose, Kikuji
Journal of Physics: Condensed Matter 19: 365201 (2007) Semantic Scholar
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79.
First-principles study of electronic structure of deformed carbon nanotube
Iwami, Kazuchika; Ono, Tomoya; Hirose, Kikuji; Goto, Hidekazu
Science and Technology of Advanced Materials 8: 200 (2007) Semantic Scholar
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80.
First-principles study on electronic structure of Si/SiO2 interface -effect of interface defects on local charge density-
Kutsuki, Katsuhiro; Ono, Tomoya; Hirose, Kikuji
Science and Technology of Advanced Materials 8: 204 (2007) Semantic Scholar
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1.
超精密加工と表面科学
小野,倫也
(担当:分担執筆, 範囲:表面界面物性シミュレーション)
2014年3月
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2.
計算機マテリアルデザイン入門
広瀬, 喜久治; 小野, 倫也
(担当:分担執筆, 範囲:応用編RSPACE-04-ナノ構造体の電気伝導特性-)
大阪大学出版会 2005年9月
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3.
計算機マテリアルデザイン入門
広瀬, 喜久治; 小野, 倫也
(担当:分担執筆, 範囲:基礎編RSPACE-04-ナノ構造体の電気伝導特性-)
大阪大学出版会 2005年1月
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4.
FIRST-PRINCIPLES CALCULATIONS IN REAL-SPACE FORMALISM --Electronic Configurations and Transport Properties of Nanostructures--
Hirose, Kikuji; Ono, Tomoya; Fujimoto, Yoshitaka; Tsukamoto, Shigeru
2005年1月
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1.
DFT calculation for electronic structure and carrier scattering property at SiC-MOS interface
Ono,Tomoya
European Advanced Energy Materials Congress 2018年3月25日 招待有り
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2.
Efficient and Scalable Calculation of Complex Band Structure Using Sakurai-Sugiura Method
Iwase, Shigeru; Futamura, Yasunori; Imakura, Akira; Sakurai, Tetsuya; Ono, Tomoya
International Conference for High Performance Computing, Networking, Storage and Analysis (SC17) 2017年11月13日
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3.
第一原理計算によるデバイス用界面の電子状態とキャリア伝導解析
小野,倫也
日本物理学会2017年秋季大会 2017年9月21日 招待有り
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4.
Nonlinear Sakurai-Sugiura method for electronic transport calculation
Sakurai, Tetsuya; Futamura, Yasunori; Imakura, Akira; Iwase, Shigeru; Ono, Tomoya
2017 Meeting of the International Linear Algebra Society 2017年7月24日
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5.
Nonlinear Sakurai-Sugiura method for complex band structure calculation on KNL cluster
Sakurai, Tetsuya; Futamura, Yasunori; Imakura, Akira; Shigeru, Iwase; Ono, Tomoya
The Platform for Advanced Scientific Compuging (PASC) Conference 2017年6月26日
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6.
Density functional theory calculation for interface electronic structure of SiC power electronic devices
Ono,Tomoya
EMN Meeting on Quantum 2017年6月18日 招待有り
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7.
第一原理計算と高速計算機を用いた材料探索・デバイス設計
小野,倫也
情報機構セミナー 2017年6月13日 招待有り
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8.
First-principles study on atomic and electronic structures of 4HSiC(0001)/SiO interface
Ono, Tomoya; kirkham, Christopher James
APS March Meeting 2017 2017年3月13日
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9.
First-Principles Study on Electron Conduction at 4H-SiC(0001)/SiO2 Interface
Ono, Tomoya; Kirkham, Christopher James; Iwase, Shigeru
Pacific Rim Meeting on Electrochemical and Solid-State Science 2016 2016年10月2日 招待有り
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10.
First-principles study on carrier scattering property at 4H-SiC(0001)/SiO2
Ono, Tomoya; Kirkham, Christopher James; Iwase, Shigeru
2016 International Conference on Solid State Devices and Materials 2016年9月26日
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11.
SiC酸化過程とMOS界面電子状態の第一原理シミュレーション
小野,倫也
応用物理学会先進パワー半導体分科会 第1回個別討論会 「SiC酸化メカニズムと界面欠陥」 2016年8月4日 招待有り
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12.
Density functional theory study on transport property of nanomaterials
Ono, Tomoya
5th International Conference from Nanoparticles and Nanomaterials to Nanodevices and Nanosystems (IC4N) 2016年6月26日 招待有り
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13.
Density functional theory calculation for transport property of carbon nanostructures
Ono,Tomoya
EMN Meeting on Carbon Nanostructures 2016年3月27日 招待有り
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14.
Ab initio investigations for interface electronic structures of SiC-MOS
Ono,Tomoya; Kirkham,Christopher
International Workshop on Dielectric Thin Films for Future Electron Devices – Science and Technology – 2015年11月2日 招待有り
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15.
First-Principles Calculations using Real-Space Finite-Difference Method
Ono,Tomoya
Advances in Modeling of Nano Materials 2015年6月14日 招待有り
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16.
第一原理計算を用いたナノデバイスの機能予測
小野,倫也
応用物理学会関西支部平成26年度第2回講演会「シミュレーションが先導するエレクトロニクス・フォトニクス研究 ~関西発イノベーションと若手からの発信~」 2014年11月12日 招待有り
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17.
First-principles calculation on transport properties of carbon nanotubes and fullerenes
Ono,Tomoya
International Workshop of Computational Nano-Materials Design on Green Energy, JSPS Core-to-Core Program Workshop 2014年6月1日 招待有り
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