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大井川治宏

Oigawa, Haruhiro

数理物質系 , 講師
Institute of Pure and Applied Sciences , Assistant Professor

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

21. Development of Radio Frequency STM for ESR Spin Detection Matsuyama,Eiji; S.,Yasuda; Takeuchi,Osamu; Oigawa,Haruhiro (+1 著者) Shigekawa,Hidemi
13th International Conference on Scanning Tunneling Microscopy/Spectroscopy 119 (2005)
22. Probe effect in scanning tunneling microscopy on Si(001) low-temperature phases S Yoshida; T Kimura; O Takeuchi; K Hata (+3 著者) H Shigekawa
PHYSICAL REVIEW B 70: (2004) Semantic Scholar
23. 光STM-超高速時間応答測定の可能性重川, 秀実; 武内, 修; 青山, 正宏; 大井川, 治宏
應用物理 73: 1318 (2004)
24. Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy O Takeuchi; M Aoyama; R Oshima; Y Okada (+4 著者) M Yamashita
APPLIED PHYSICS LETTERS 85: 3268 (2004) Semantic Scholar
25. Characteristic of the Si(100) surface low-temperature phase with two competing structures investigated by rare gas adsorption T Kimura; S Yoshida; O Takeuchi; E Matsuyama (+1 著者) H Shigekawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43: L990 (2004) Semantic Scholar
26. Caracteristic intra-and interactions of Kr atoms adsorbed on the Si(111)-7×7 surface Li,Y.-J; Futaba,D. N; Oigawa,H; Miyake,KShigekawa,H
Physical Revien B 68: 033301-1 (2003)
27. SPMで覗くSi(100)表面構造相転移の不思議な世界ー最安定相を探し求めた先に現れたのはー重川秀実; 吉田昭二; 武内修; 大井川治宏
日本物理学会誌 58: 503-511 (2003)
28. Surface reconstraction of GaAs(001) nitrided under the controlled As partial pressure Imayoshi,T; Oigawa,H; Shigekawa,H; Tokumoto,H
Surface Science 540: L577 (2003)
29. Array of Be₂ dimers formed on the GaAs(001)-2x3 surface Oigawa,H; Wassermeier,M; Daeweritz,L; Ploog,K. H
2nd Intl. Workshop on Quantum Nonplaner Nanostructures & Nano electronics 2: 213 (2002)
30. Formation of one-dimensional Be chains on the GaAs Surface Oigawa,H; Wassermeier,M; Daeweritz,L; Ploog,K. H
International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics 1: 173 (2000)
31. Initial stage of nitridation of GaAs(001): Atomic scale view T Imayoshi; H Oigawa; H Shigekawa; H Tokumoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38: 3875 (1999)
32. Si(111) surface under phase transitions studied by the analysis of inner layer structures using bias-dependent scanning tunneling microscopy K Miyake; T Kaikoh; YJ Li; H OigawaH Shigekawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38: 3841 (1999)
33. Stability and nuclear formation of Si(111)-7×7 structure as determined from charge redistribution in surface layers Miyake,K; Oigawa,H; Hata,K; Morita,R (+1 著者) Shigekawa,H
Surface Science 429: 260 (1999)
34. Initial Stage of Nitridation of GaAs(001) : Atomic Scale View Imayoshi,T; Oigawa,H; Shigekawa,H; Tokumoto,H
Japanese Journal of Applied Physics 38: 3875 (1999) Semantic Scholar
35. Si(111) surface under phase transitions studied by the analysis of inner structures using bias-dependent scanning tunneling microscopy Miyake,K; Kaikoh,T; Li,Y.-J; Oigawa,HShigekawa,H
Japanese Journal of Applied Physics 38: 3841 (1999)
36. STM/RHEED Observation of N-for-As Exchange Reaction on GaAs(001)-2×4 : As Surface Imayoshi,T; Oigawa,H; Shigekawa,H; Tokumoto,H
Proceedings of Scanning Tunneling Microscopy/Spectroscopy and Related Proximal Probe Microscopy 179 (1999)
37. Controlled anisotropic ordering of Be deposited on the GaAs(001) surface Oigawa,H; Wassermeier,M; Behrend,J; Daeweritz,LPloog,K.H
Surface Science 399: 39 (1998)
38. Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition Oigawa,H; Wassermeier,M; Behrend,J; Daeweritz,LPloog,K. H
Surface Science 376: 185 (1997)
39. 6KにおけるSi(100)ダイマー間相互作用と位相欠陥のダイナミックス重川,秀実; 三宅,晃司; 畠,賢治; 小沢,聡 (+1 著者) 吉崎,亮造
Journal of the Surface Science Society of Japan 18: 780 (1997) Semantic Scholar
40. Phase Transition between c(4 × 2) and p(2 × 2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion SHIGEKAWA, Hidemi; MIYAKE, Koji; ISHIDA, Masahiko; HATA, Kenji (+6 著者) NAGAMURA, Toshihiko
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 35: L1081 (1996)

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1. 走査プローブ顕微鏡－正しい実験とデータ解析のために必要なこと－大井川, 治宏 (担当:分担執筆, 範囲:薬品を扱うために／その他の技術)
実験物理科学シリーズ・共立出版 2009年3月 (ISBN: 9784320033818)
2. 実戦ナノテクノロジー走査プローブ顕微鏡と局所分光大井川, 治宏 (担当:分担執筆, 範囲:半導体量子構造の解析)
裳華房 2005年11月 (ISBN: 9784785369071)
3. ナノテクノロジーのための走査プローブ顕微鏡大井川, 治宏 (担当:分担執筆, 範囲:化合物半導体表面)
表面分析技術選書・丸善 2002年1月 (ISBN: 462107069X)
4. 硫黄処理による砒化ガリウムの表面物性の研究大井川,治宏
1990年7月

1. 光励起多探針技術の開発と低次元半導体評価への応用茂木, 裕幸; 汪, 子涵; 高口裕平; 遠藤尚彦; 宮田耕充; 嵐田, 雄介; 吉田昭二; 谷中, 淳; 大井川治宏; 武内, 修; 重川秀実
第68回応用物理学会春季学術講演会 2021年3月16日招待有り
2. Photoresponse Measurements of Monolayer WSe2MoSe2 In-plane Heterostructure by an Optically-excited Multiprobe method Mogi, H; Wang, Z; Bamba, T; Takaguchi, Y; Endo, T; Yoshida, S; Taninaka, A; Oigawa, H; Miyata, Y; Takeuchi, O; Shigekawa, Hidemi
27th International Colloquium on Scanning Probe Microscopy (ICSPM27) 2019年12月5日
3. 光励起多探針計測を用いた単層 WSe2/MoSe2面内ヘテロ構造の光応答評価茂木裕幸; 汪子涵; 番場隆文; 髙口裕平; 遠藤尚彦; 吉田昭二; 谷中淳; 大井川治宏; 宮田耕充; 重川, 秀実
2019年日本表面真空学会学術講演会 2019年10月28日
4. Photoresponse of WSe2/MoSe2 in-plane heterostructure probed by a laser-combined multiprobe spectroscopy Mogi, Hiroyuki; Wang, Zi-Han; Bamba, Takafumi; Takaguchi, Yuhei; Endo, Takahiko; Yoshida, Shoji; Taninaka, Atsushi; Oigawa, Haruhiro; Miyata, Yasumitsu; Takeuchi, Osamu; Shigekawa, Hidemi
Recent Progress in Graphene & 2D Materials Research (RPGR2019) 2019年10月6日
5. パルス対励起型STMによる硫黄処理GaAs(001)表面のキャリアダイナミックスと基板依存性大井川治宏; 寺田康彦; 大久保淳史; 岩田康史; 藤田高士; 佐々木亮; 武内修; 重川秀実
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6. GaAs/GaInNAsSb系ヘテロ接合化合物太陽電池の作製と評価市川周平; 宮下直也; 上殿明良; 大井川治宏; 岡田至崇
第69回応用物理学会学術講演会講演予稿集_応用物理学会_'08秋_3_ 2008年9月
7. Heterodyne Scanning Tunnelling Spectroscopy Matsuyama, Eiji; Oigawa, Haruhiro; Nakamura, Junji; Kondo, Takahiro
31st International Colloquium on Scanning Probe Microscopy Thin Film and Surface Physics Division of JSAP
8. Nanoscale dynamics probed by laser-combined scanning tunneling microscopy Shigekawa, Hidemi; Yoshida, Shoji; Takeuchi, Osamu; Aoyama, Masahiro; Terada, Yasuhiko; Kondo, Hiroyuki; Oigawa, Haruhiro
7th International Conference on Nano-Molecular Electronics (ICNME2006)