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大井川治宏

Oigawa, Haruhiro

数理物質系 , 講師
Institute of Pure and Applied Sciences , Assistant Professor

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41. Phase Transition between C(4×2) and P(2×2) Structures of the Si(100) Surface at 6K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion Shigekawa,H; Miyake,K; Ishida,M; Hata,K (+6 著者) Naganuma,T
Japanese Journal of Applied Physics 35: L1081 (1996)
42. Molecular and electronic properties of β-(BEDT-TTF)₂PF₆ studied by scanning tunneling microscopy Shigekawa,H; Miyake,K; Aiso,Y; Oigawa,H (+1 著者) Kobayashi,A
Synthetic Metals 70: 935 (1995) Semantic Scholar
43. Surface superstructure of quasi-one-dimensional organic conductor β-(BEDT-TTF)₂PF₆ crystal studied by scanning tunneling microscopy Shigekawa,H; Miyake,K; Ishida,M; Hata,K (+3 著者) Mori,T
Physical Review B 52: 16361 (1995) Semantic Scholar
44. Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms Oigawa,H; Shigekawa,H; Nannichi,Y
Materials Science Forum 185-188: 191 (1995)
45. Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy Shigekawa,H; Oigawa,H; Miyake,K; Aiso,Y (+2 著者) Sakurai,T
Applied Physics Letters 65: 607 (1994) Semantic Scholar
46. STMによるSe処理を施したGaAs(001)表面超構造の研究重川,秀実; 大井川,治宏; 三宅,晃司; 相磯,良明 (+2 著者) 桜井,利夫
表面科学 15: 305-310 (1994)
47. Dimer Model for Comprehensive Interpretation of Selenium-Passivated GaAs(001) Surface Structures Shigekawa,H; Oigawa,H; Miyake,K; Aiso,YNannichi,Y
Proc. 1st International Symposium on Control of Semiconductor Interfaces 303 (1994)
48. Novel interlayer as an interfacial reaction suppressor in high GaAs Schottky barrier Oshima,M; Scimeca,T; Watanabe,Y; Sugiyama,M (+2 著者) Nannichi,Y
Proc. 1st International Symposium on Control of Semiconductor Interfaces 199 (1994)
49. Surface Structures of GaAs(001) with Selenium Adsorbate Studied by Scanning Tunneling Microscopy Shigekawa,H; Oigawa,H; Miyake,K; Aiso,YNannichi,Y
Proc. 1st International Symposium on Control of Semiconductor Interfaces 573 (1994)
50. Molecular structure of a crystal phase coexisting with -(BEDT-TTF)2Cu(NCS)2 studied by scanning tunneling microscopy Hidemi Shigekawa; Koji Miyake; Haruhiro Oigawa; Yasuo Nannichi (+1 著者) Yoshio Saito
Physical Review B 50: 15427 (1994) Semantic Scholar
51. SURFACE-STRUCTURES OF GAAS PASSIVATED BY CHALCOGEN ATOMS H SHIGEKAWA; H OIGAWA; K MIYAKE; Y AISO (+3 著者) T SAKURAI
APPLIED SURFACE SCIENCE 75: 169 (1994)
52. OXIDATION OF SULFUR-TREATED GAAS-SURFACES STUDIED BY PHOTOLUMINESCENCE AND PHOTOELECTRON-SPECTROSCOPY M OSHIMA; T SCIMECA; Y WATANABE; H OIGAWAY NANNICHI
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 32: 518 (1993)
53. Interface structure and chemical bondings in Al/S-passivated GaAs(111) Sugiyama,M; Maeyama,S; Scimeca,T; Oshima,M (+2 著者) Hashizume,H
Applied Physics Letters 63: 2540 (1993) Semantic Scholar
54. COMBINED ANALYSIS OF OVERLAYER/S/GAAS INTERFACES WITH PHOTOEMISSION SPECTROSCOPY AND X-RAY STANDING-WAVE M OSHIMA; T SCIMECA; M SUGIYAMA; S MAEYAMA (+2 著者) H HASHIZUME
APPLIED SURFACE SCIENCE 70-1: 496 (1993)
55. Sulfur Structural and Chemical Bonding Changes for Metal/S-Passivated GaAs(111) Studied by the X-ray Standing Wave Technique and Synchrotron Radiation Photoemission Spectroscopy Sugiyama,M; Maeyama,S; Scimeca,T; Oshima,M (+2 著者) Hashizume,H
Extended Abstracts 24th Conference on Solid State Devices & Materials 536 (1992)
56. Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy Oshima,M; Scimeca,T; Watanabe,Y; Oigawa,HNannichi,Y
Extended Abstracts 24th Conference on Solid State Devices & Materals 545 (1992)
57. HETEROEPITAXY OF LAYERED COMPOUND SEMICONDUCTOR GASE ONTO GAAS-SURFACES FOR VERY EFFECTIVE PASSIVATION OF NANOMETER STRUCTURES K UENO; H ABE; K SAIKI; A KOMA (+1 著者) Y NANNICHI
SURFACE SCIENCE 267: 43 (1992) Semantic Scholar
58. Deposition of CaF2 and GaF3 on sulfur passivated GaAs(111)A, 100, and (111)B surfaces T. Scimeca; Y. Muramatsu; M. Oshima; H. Oigawa (+1 著者) T. Ohno
Journal of Applied Physics 71: 4405 (1992) Semantic Scholar
59. Surface and interface structures of S-passivated GaAs(111) studied by soft x-ray standing waves Munehiro Sugiyama; Satoshi Maeyama; Masaharu Oshima; Haruhiro Oigawa (+1 著者) Hiroo Hashizume
Applied Physics Letters 60: 3247 (1992) Semantic Scholar
60. X-ray standing-wave analysis of the (NH4)2Sx-treated GaAs(111)B surface Satoshi Maeyama; Munehiro Sugiyama; Masaharu Oshima; Hirohiko Sugahara (+2 著者) Hiroo Hashizume
Applied Surface Science 60-61: 513 (1992) Semantic Scholar

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