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大井川治宏

Oigawa, Haruhiro

数理物質系 , 講師
Institute of Pure and Applied Sciences , Assistant Professor

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61. Interfacial chemistry and stability of sulfur-treated GaAs(111)A, 100 and (111)B T. Scimeca; Y. Muramatsu; M. Oshima; H. OigawaY. Nannichi
Applied Surface Science 60-61: 256 (1992) Semantic Scholar
62. Chemistry and structure of GaAs surfaces cleaned by sulfur annealing Sugahara,H; Oshima,M; Oigawa,H; Nannichi,Y
Thin Solid Films 220: 212 (1992)
63. Synchrotron Radiation Photoemission Study on (NH₄)₂Sx-treated n-GaAs Sugahara,H; Oshima,M; Oigawa,H; Shigekawa,HNannichi,Y
Extended Abstracts 21st Conference on Solid State Devices & Materials 547 (1991)
64. Universal Passivation Effect of (NH₄)₂Sx Treatment on the Surface of III-V Compound Semiconductors Oigawa,H; Fan,J; Nannichi,Y; Sugahara,HOshima,M
Japanese Journal of Applied Physics 30: L322 (1991) Semantic Scholar
65. Bonding States of chemisorbed sulfur atoms on GaAs Sugahara,H; Oshima,M; Klauser,R; Oigawa,HNannichi,Y
Surface Science 242: 335 (1991)
66. Evidence for the passivation effect in (NH4)2S x-treated GaAs observed by slow positrons Jong-Lam Lee; Long Wei; Shoichiro Tanigawa; Haruhiro OigawaYasuo Nannichi
Applied Physics Letters 58: 1167 (1991) Semantic Scholar
67. The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam Lee,J; Wei,L; Tanigawa,S; Oigawa,HNannichi,Y
Japanese Journal of Applied Physics 30: L138 (1991) Semantic Scholar
68. The Effect of (NH₄)₂Sx-treatment on the passivation of GaP surface Lee,J; Wei,L; Tanigawa,S; Oigawa,HNannichi,Y
Journal of Applied Physics 69: 2877 (1991) Semantic Scholar
69. Temperature-dependent changes on the sulfur-passivated GaAs (111)A, (100), and (111)B surfaces T. Scimeca; Y. Muramatsu; M. Oshima; H. OigawaY. Nannichi
Physical Review B 44: 12927 (1991) Semantic Scholar
70. Surface structure of selenium-treated GaAs (001) studied by field ion scanning tunneling microscopy H. Shigekawa; T. Hashizume; H. Oigawa; K. Motai (+2 著者) T. Sakurai
Applied Physics Letters 59: 2986 (1991) Semantic Scholar
71. Synchrotron radiation photoemission analysis for(NH₄)₂Sx-treated GaAs Sugahara,H; Oshima,M; Oigawa,H; Shigekawa,HNannichi,Y
Journal of Applied Physics 69: 4345 (1991) Semantic Scholar
72. Surface Structure of InAs (001) Treated with (NH₄)₂Sx Solution Katayama,M; Aono,M; Oigawa,H; Nannichi,Y (+1 著者) Oshima,M
Japanese Journal of Applied Physics 30: L786 (1991) Semantic Scholar
73. Chemistry of S/GaAs and metal/S/GaAs systems Sugahara,H; Oshima,M; Oigawa,H; Shigekawa,HNannichi,Y
Proc. 37th Symposium of American Vacuum Society 37: 50 (1990)
74. Epitaxial Growth of Al on (NH₄)₂Sx-treated GaAs Oigawa,H; Fan,J; Nannichi,Y; Kawabe,M
Japanese Journal of Applied Physics 29: L249 (1990) Semantic Scholar
75. 硫化アンモニウム処理を施したGaAs(100)表面のSTM観察吉村,雅満; 塩田,隆; 黒木,昭彦; 影島,賢巳 (+3 著者) 南日,康夫
表面科学 11: 469 (1990)
76. 硫黄処理によるGaAs表面の安定化大井川,治宏; 樊,甲法; 南日,康夫; 重川,秀実
表面科学 11: 9 (1990)
77. The Effect of Sulfur on the Surface of III-V Compound Semiconductors Nannichi,Y; Fan,J; Oigawa,H; Koma,A
Extended Abstracts 22nd Conference on Solid State Devices & Materials 453 (1990)
78. THE EFFECT OF SULFUR COATING ON THE PASSIVATION OF THE GAAS SURFACE OBSERVED BY SLOW POSITRONS JL LEE; L WEI; S TANIGAWA; H OIGAWAY NANNICHI
THIRD INTERNATIONAL WORKSHOP ON POSITRON AND POSITRONIUM CHEMISTRY 3: 603 (1990)
79. Marked Reduction of the Surface/Interface States of GaAs by (NH₄)₂Sx Treatment Fan,J; Oigawa,H; Nannichi,Y
Japanese Journal Applied Physics 28: L2255 (1989) Semantic Scholar
80. Reflection High-Energy Electron Diffraction and X-ray Photoemission Spectroscopic Study on (NH₄)₂Sx-Treated GaAs(100) Surfaces Hirayama,H; Matsumoto,Y; Oigawa,H; Nannichi,Y
Applied Physics Letters 54: 2565 (1989) Semantic Scholar

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4. 硫黄処理による砒化ガリウムの表面物性の研究大井川,治宏
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1. 光励起多探針技術の開発と低次元半導体評価への応用茂木, 裕幸; 汪, 子涵; 高口裕平; 遠藤尚彦; 宮田耕充; 嵐田, 雄介; 吉田昭二; 谷中, 淳; 大井川治宏; 武内, 修; 重川秀実
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4. Photoresponse of WSe2/MoSe2 in-plane heterostructure probed by a laser-combined multiprobe spectroscopy Mogi, Hiroyuki; Wang, Zi-Han; Bamba, Takafumi; Takaguchi, Yuhei; Endo, Takahiko; Yoshida, Shoji; Taninaka, Atsushi; Oigawa, Haruhiro; Miyata, Yasumitsu; Takeuchi, Osamu; Shigekawa, Hidemi
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5. パルス対励起型STMによる硫黄処理GaAs(001)表面のキャリアダイナミックスと基板依存性大井川治宏; 寺田康彦; 大久保淳史; 岩田康史; 藤田高士; 佐々木亮; 武内修; 重川秀実
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6. GaAs/GaInNAsSb系ヘテロ接合化合物太陽電池の作製と評価市川周平; 宮下直也; 上殿明良; 大井川治宏; 岡田至崇
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7. Heterodyne Scanning Tunnelling Spectroscopy Matsuyama, Eiji; Oigawa, Haruhiro; Nakamura, Junji; Kondo, Takahiro
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8. Nanoscale dynamics probed by laser-combined scanning tunneling microscopy Shigekawa, Hidemi; Yoshida, Shoji; Takeuchi, Osamu; Aoyama, Masahiro; Terada, Yasuhiko; Kondo, Hiroyuki; Oigawa, Haruhiro
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