ホーム > 都倉 康弘/ Tokura, Yasuhiro
都倉 康弘
Tokura, Yasuhiro
物理学学位プログラム , 教授
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量子力学的な多粒子系に流れる熱流の原理限界を導出
2023-09-01
都倉 康弘
オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。
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281.
Step ordering during fractional-layer superlattice growth on GaAs(001) vicinal surfaces by metalorganic chemical vapor deposition
Saito, H.; Uwai, K.; Tokura, Y.; Fukui, T.
Applied Physics Letters 63: (1993) Semantic Scholar
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282.
Aharonov-Bohm effect under high magnetic field in a Corbino disk anti-dot channel
Tsubaki, K.; Honda, T.; Tokura, Y.
Surface Science 263: 392 (1992) Semantic Scholar
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283.
REFLECTION AND REFRACTION OF BALLISTIC ELECTRONS THROUGH DIFFERENT CARRIER CONCENTRATION REGIONS
YK FUKAI; S TARUCHA; Y HIRAYAMA; Y TOKURAT SAKU
APPLIED PHYSICS LETTERS 60: 106 (1992)
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284.
SUBBAND MIXING EFFECT IN DOUBLE-BARRIER DIODES WITH A RESTRICTED LATERAL DIMENSION
S TARUCHA; Y HIRAYAMA; Y TOKURA
APPLIED PHYSICS LETTERS 58: 1623 (1991)
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285.
RESONANT TUNNELING THROUGH ONE-DIMENSIONAL STATES CONSTRICTED BY ALXGA1-XAS/GAAS/ALXGA1-XAS HETEROJUNCTIONS AND HIGH-RESISTANCE REGIONS INDUCED BY FOCUSED GA ION-BEAM IMPLANTATION
S TARUCHA; Y HIRAYAMA; Y TOKURA
SUPERLATTICES AND MICROSTRUCTURES 9: 341 (1991)
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286.
Resonant tunneling of three-dimensional electrons into degenerate zero-dimensional levels
S. Tarucha; Y. Tokura; Y. Hirayama
Physical Review B 44: 13815 (1991) Semantic Scholar
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287.
GAAS TETRAHEDRAL QUANTUM DOT STRUCTURES FABRICATED USING SELECTIVE AREA METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUKUI, T.; ANDO, S.; TOKURA, Y.; TORIYAMA, T.
Applied Physics Letters 58: (1991)
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288.
GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
Fukui, T.; Ando, S.; Tokura, Y.; Toriyama, T.
Applied Physics Letters 58: (1991) Semantic Scholar
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289.
DENSITY OF STATES OF AN ALAS-GAAS FRACTIONAL SUPERLATTICE IN A MODULATION-DOPED STRUCTURE
K TSUBAKI; Y TOKURA; N SUSA
APPLIED PHYSICS LETTERS 57: 2101 (1990)
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290.
ELECTRONIC STATES IN AN ALGAAS-GAAS MODULATION-DOPED HETEROINTERFACE WITH A 10 NM-ORDER PERIODIC STRUCTURE
Y TOKURA; K TSUBAKI; N SUSA
SURFACE SCIENCE 228: 280 (1990)
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291.
(ALAS)1/2(GAAS)1/2 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL GAAS SUBSTRATES BY MOCVD
T FUKUI; H SAITO; Y TOKURA; K TSUBAKIN SUSA
SURFACE SCIENCE 228: 20 (1990)
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292.
Mobility modulation on a modulation-doped structure with an AlAs/GaAs fractional layer superlattice
Tsubaki, K.; Tokura, Y.; Susa, N.
Applied Physics Letters 57: 804 (1990) Semantic Scholar
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293.
ELECTRONIC STATE OF ALAS/GAAS VERTICAL SUPERLATTICE IN MODULATION DOPED STRUCTURE
TSUBAKI, K.; TOKURA, Y.; SUSA, N.
Institute of Physics Conference Series no.106 Chap.11 pp.869-875: (1990)
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294.
Electron effective-mass modulation transistor
Tokura, Y.; Susa, N.
Journal of Applied Physics 67: (1990) Semantic Scholar
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295.
Optical study of the electronic state in La
2-x Srx CuO4 Uchida, S.; Ido, T.; Takagi, H.; Arami, T. (+1 著者) Tajima, S.Physica B: Condensed Matter 165-166: (1990) Semantic Scholar -
296.
ELECTRON EFFECTIVE-MASS MODULATION TRANSISTOR
TOKURA, Y.; SUSA, N.
Journal of Applied Physics 67: (1990)
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297.
Bonding states in the CuO
2 -plane of the layered cuprates S.Tajima; S.Ishibashi; T.Itoh; H.Eisaki (+4 著者) S.UchidaPhysica B: Condensed Matter 165-166: (1990) Semantic Scholar -
298.
LATERAL INTERFACE MIXING IN GAAS QUANTUM WELL WIRE ARRAYS
T FUKUI; H SAITO; Y TOKURA
APPLIED PHYSICS LETTERS 55: 1958 (1989) Semantic Scholar
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299.
ELECTRONIC STATES IN LATERAL STRUCTURES ON MODULATION-DOPED HETEROINTERFACES
Y TOKURA; K TSUBAKI; N SUSA
APPLIED PHYSICS LETTERS 55: 1403 (1989)
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300.
Electron Wave Interference Device with Vertical Superlattices Working in Large Current Region
Tsubaki, K.; Tokura, Y.; Fukui, T.; Saito, H.Susa, N.
Electronics Letters 25: 728 (1989) Semantic Scholar
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