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岡本 大

ALUMNI 2025年11月現在、筑波大学が主たる所属機関ではありません

Okamoto, Dai

富山県立大学 , 工学部　電気電子工学科 , 准教授
Toyama Prefectural University , Faculty of Pure and Applied Sciences , Assistant Professor

http://power.bk.tsukuba.ac.jp/

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  1. 1. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface Mitsuru Sometani; Yusuke Nishiya; Ren Kondo; Rei Inohana (+4 著者) Takahide Umeda
      APL Materials (2023) Semantic Scholar
  2. 2. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs Tetsuo Hatakeyama; Hirohisa Hirai; Mitsuru Sometani; Dai Okamoto (+1 著者) Shinsuke Harada
      Journal of Applied Physics 131: 145701 (2022) Semantic Scholar
  3. 3. Accurate Determination of Threshold Voltage Shift during Negative Gate Bias Stress in 4H-SiC MOSFETs by Fast On-the-fly Method Hiroki Sakata; Dai Okamoto; Mitsuru Sometani; Mitsuo Okamoto (+4 著者) Noriyuki Iwamuro
      Japanese Journal of Applied Physics 60: 060901 (2021) Semantic Scholar
  4. 4. Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method Xufang Zhang; Tsubasa Matsumoto; Ukyo Sakurai; Toshiharu Makino (+7 著者) Norio Tokuda
      Carbon 168: 659 (2020) Semantic Scholar
  5. 5. Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs Hiroki Nemoto; Dai Okamoto; Xufang Zhang; Mitsuru Sometani (+4 著者) Hiroshi Yano
      Japanese Journal of Applied Physics 59: 044003 (2020) Semantic Scholar
  6. 6. Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities Tetsuo Hatakeyama; Teruyoshi Masuda; Mitsuru Sometani; Shinsuke Harada (+3 著者) Hajime Okumura
      APPLIED PHYSICS EXPRESS 12: 201003-1 (2019) Semantic Scholar
  7. 7. Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors Xufang Zhang; Dai Okamoto; Tetsuo Hatakeyama; Mitsuru Sometani (+2 著者) Hiroshi Yano
      Japanese Journal of Applied Physics 57: 06KA04-1 (2018) Semantic Scholar
  8. 8. Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors Yuki Karamoto; Xufang Zhang; Dai Okamoto; Mitsuru Sometani (+3 著者) Hiroshi Yano
      Japanese Journal of Applied Physics 57: 06KA06-1 (2018) Semantic Scholar
  9. 9. Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions Mitsuru Sometani; Mitsuo Okamoto; Tetsuo Hatakeyama; Yohei Iwahashi (+5 著者) Hajime Okumura
      Japanese Journal of Applied Physics 57: 04FA07-1 (2018) Semantic Scholar
  10. 10. Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test Junjie An; Masaki Namai; Dai Okamoto; Hiroshi Yano (+1 著者) Noriyuki Iwamuro
      ELECTRONICS AND COMMUNICATIONS IN JAPAN 101: 24 (2018) Semantic Scholar
  11. 11. 異原子導入によるSiC MOSFETの特性改善 岡本 大; 矢野裕司
      応用物理 86: 781 (2017)
  12. 12. Characterization of near-interface traps at 4H-SiC metal-oxide-semiconductor interfaces using modified distributed circuit model Xufang Zhang; Dai Okamoto; Tetsuo Hatakeyama; Mitsuru Sometani (+3 著者) Hiroshi Yano
      APPLIED PHYSICS EXPRESS 10: 064101-1 (2017) Semantic Scholar
  13. 13. Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements Tetsuo Hatakeyama; Yuji Kiuchi; Mitsuru Sometani; Shinsuke Harada (+3 著者) Hajime Okumura
      APPLIED PHYSICS EXPRESS 10: 046601 (2017) Semantic Scholar
  14. 14. Effect of boron incorporation on slow interface traps in SiO2/4H-SiC structures Dai Okamoto; Mitsuru Sometani; Shinsuke Harada; Ryoji Kosugi (+1 著者) Hiroshi Yano
      APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 123: (2017) Semantic Scholar
  15. 15. Experimental demonstration of -730V vertical SiC p-MOSFET with high short circuit withstand capability for complementary inverter applications Junjie An; Masaki Namai; Mikiko Tanabe; Dai Okamoto (+1 著者) Noriyuki Iwamuro
      Technical Digest - International Electron Devices Meeting, IEDM 10.7.1 - 10.7.4 (2017) Semantic Scholar
  16. 16. Unclamped Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価 安 俊傑; 生井 正輝; 岡本 大; 矢野 裕司 (+1 著者) 岩室 憲幸
      IEEJ Transactions on Electronics, Information and Systems 137: 216 (2017) Semantic Scholar
  17. 17. Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method Mitsuru Sometani; Dai Okamoto; Shinsuke Harada; Hitoshi Ishimori (+5 著者) Hajime Okumura
      JAPANESE JOURNAL OF APPLIED PHYSICS 55: 04ER11 (2016) Semantic Scholar
  18. 18. Experimental Demonstration of-730V Vertical SiC p-MOSFET with High Short Circuit Withstand Capability for Complementary Inverter Applications Junjie An; Masaki Namai; Mikiko Tanabe; Dai Okamoto (+1 著者) Noriyuki Iwamuro
      2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) IEDM16-272 - IEDM16-275 (2016) Semantic Scholar
  19. 19. Development of Ultrahigh-Voltage SiC Devices Kenji Fukuda; Dai Okamoto; Mitsuo Okamoto; Tadayoshi Deguchi (+18 著者) Tsunenobu Kimoto
      IEEE TRANSACTIONS ON ELECTRON DEVICES 62: 396 (2015) Semantic Scholar
  20. 20. Exact characterization of threshold voltage instability in 4H-SiC MOSFETs by non-relaxation method Mitsuru Sometani; Dai Okamoto; Shinsuke Harada; Hitoshi Ishimori (+5 著者) Hajime Okumura
      Materials Science Forum 821-823: 685 (2015) Semantic Scholar
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  1. 1. Compound Semiconductor An, Junjie; Namai, Masaki; Tanabe, Mikiko; Okamoto, Dai; Yano, Hiroshi; Iwamuro, Noriyuki (担当:分担執筆, 範囲:Making a debut: the p-type SiC MOSFET)
    Angel Business Communications publication 2017年6月

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