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奥村宏典

Okumura, Hironori

数理物質系 , 助教
Faculty of Pure and Applied Sciences , Assistant Professor

https://sites.google.com/view/okumura

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

1. Fully vertical AlN-on-SiC Schottky barrier diodes Okumura, Hironori; Imura, Masataka; Miyazawa, Fuga; Mainini, Lorenzo
JAPANESE JOURNAL OF APPLIED PHYSICS 63: (2024)
2. Study of radiation tolerance of Cu (In, Ga) Se2 detector Itabashi, Kosuke; Fujii, S; Imura, M; Isobe, T (+3 著者) Togawa, M
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1067: (2024) Semantic Scholar
3. MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates OKUMURA, Hironori; Varley, Joel B
Japanese Journal of Applied Physics 63: 075502 (2024) Semantic Scholar
4. The CIGS semiconductor detector for particle physics Togawa, Manabu; Fujii, S; Imura, M; Itabashi, K (+3 著者) Okumura, Hironori
Journal of Instrumentation 19: C05042 (2024) Semantic Scholar
5. Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy Okumura, Hironori; Fassion, Andréa; Mannequin; Cédric
Japanese Journal of Applied Physics 63: 055502 (2024) Semantic Scholar
6. Electrical properties of vertical Cu₂O/β-Ga₂O₃ (001) p-n diodes Jia, Yun; Sato, Sora; Traore, Aboulaye; Morita, Ryo (+4 著者) Sakurai, Takeaki
AIP ADVANCES 13: (2023) Semantic Scholar
7. Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates Okumura, Hironori; Watanabe, Yasuhiro; Shibata, Tomohiko
Applied Physics Express 16: 064005 (2023) Semantic Scholar
8. Degradation of vertical GaN diodes during proton and xenon-ion irradiation Okumura, Hironori; Ogawara, Yohei; Togawa, Manabu; Miyahara, Masaya (+3 著者) Imura, Masataka
Japanese Journal of Applied Physics 62: 064001 (2023) Semantic Scholar
9. Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy Okumura, Hironori
Japanese Journal of Applied Physics 62: 065504 (2023) Semantic Scholar
10. Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam Nishinaga, Jiro; Togawa, Manabu; Miyahara, Masaya; Itabashi, Kosuke (+3 著者) Ishizuka, Shogo
Japanese Journal of Applied Physics 62: SK1014 (2023) Semantic Scholar
11. Mg implantation in AlN layers on sapphire substrates Okumura, Hironori; Uedono, Akira
Jpn. J. Appl. Phys. 62: 020901 (2023) Semantic Scholar
12. Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection Imura, Masataka; Togawa, Manabu; Miyahara, Masaya; Okumura, Hironori (+2 著者) Koide, Yasuo
Functional Diamond 2: 167 (2023) Semantic Scholar
13. Sn and Si doping of α-Al2O3 (10-10) layers grown by plasma-assisted molecular beam epitaxy Okumura, Hironori
Japanese Journal of Applied Physics 61: 125505 (2022) Semantic Scholar
14. Photoconductivity buildup and decay kinetics in unintentionally doped β-Ga2O3 Aboulaye, Traore; Okumura, Hironori; Sakurai, Takeaki
JAPANESE JOURNAL OF APPLIED PHYSICS 61: (2022) Semantic Scholar
15. Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing Hironori Okumura; Yasuhiro Watanabe; Tomohiko Shibata; Kohei Yoshizawa (+5 著者) Tomas Palacios
Japanese Journal of Applied Physics 61: 026501 (2022) Semantic Scholar
16. Optical and electrical properties of silicon-implanted α-Al2O3 Hironori, Okumura; Riena, Jinno; Akira, Uedono; Masataka, Imura
Japanese Journal of Applied Physics 60: (2021) Semantic Scholar
17. Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates Hironori, Okumura
Japanese Journal of Applied Physics 60: 065504 (2021) Semantic Scholar
18. Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3 Traore, Aboulaye; Gouveia, Maria; Okumura, Hironori; Mannequin, Cedric (+1 著者) Sakurai, Takeaki
Japanese Journal of Applied Physics 60: SBBD15 (2021) Semantic Scholar
19. Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy Okumura,Hironori
Japanese Journal of Applied Physics 59: 075503 (2020) Semantic Scholar
20. Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination Okumura, Hironori; Tanaka, Taketoshi
Japanese Journal of Applied Physics 58: 120902 (2019) Semantic Scholar

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1. 欧米大学の研究環境奥村, 宏典
公益社団法人日本表面科学会 2016年
2. Optronics 谷保,芳孝; 奥村,宏典; 西中,淳一; 熊倉,一英; 山本,秀樹
2015年11月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Alpha-particle detectors with GaN PiN homoepitaxial layer Okumura, Hironori; Ogawara, Yohei; Togawa, Maanbu; Miyahara, Masaya; Nishinaga, Jiro; Imura, Masataka; Isobe, Tadaaki
2021 International Conference on Solid State Devices and Materials 2021年9月6日
3. Electrical property of n-type β-(AlGa)2O3 layers with low Al composition Okumura,Hironori
8th Asian Conference on Crystal Growth and Crystal Technology 2021年3月1日
4. Growth and electrical property of n-type β-(AlGa)2O3 layers Okumura,Hironori
Virtual Workshop on Materials Science and Advanced Electronics 2021年2月1日招待有り
5. Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3 Traore, Aboulaye; Gouveia, Maria; Hironori, Okumura; Mannequin, Cedric; Fassion, Andrea; Sakurai, Takeaki
2020 International Conference on Solid State Devices and Materials SSDM 2020 2020年9月27日
6. (AlGa)2O3/Ga2O3 resonant tunneling diodes Okumura,Hironori
Compound Semiconductor Week 2020 2020年5月17日
7. Demonstration of m-plane GaN MOSFETs Okumura,Hironori; Takahashi Tokio; Shimizu Mitsuaki
2019 International Conference on Solid State Devices and Materials 2019年9月2日
8. Demonstration of (AlGa)2O3-channel MOSFETs Okumura,Hironori
2019 International Workshop on Gallium Oxide and related materials 2019年8月12日
9. N-polar AlN POLFET Okumura, Hironori; Lemettinen, Jori; Suihkonen, Sami; Palacios, Tomás
International Workshop on Nitride Semiconductors 2018年11月11日
10. Demonstration of beta-(AlGa)2O3(010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V Okumura, Hironori; Kato, Yuji; Ohshima, Takayoshi; Palacios, Tomas
2018 International Conference on Solid State Devices and Materials 2018年9月9日
11. Nitrogen-face AlN-based field-effect transistors Okumura, Hironori; Lemettinen, Jori; Suihkonen, Sami; Palacios, Tomas
Compound Semiconductor Week 2018 2018年5月29日 Tomas Palacios
12. AlN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori
The 2017 MRS Fall Meeting & Exhibit 2017年11月26日
13. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
14. Electrical Properties of Si-Ion Implanted AlN Okumura, Hironori; Sami Suihkonen; Tomas Palacios
9th International Conference on Nitride Semiconductors 2017年7月
15. Electrical Properties of Mg-doped GaN with High Acceptor Concentrations Okumura, Hironori; Marco Malinverni; Denis Martin; Nicolas Grandjean
2016 Materials Research Societies Fall meeting 2016年12月
16. Highly p-type GaN for Advanced Optoelectronic Devices Okumura, Hironori; Malinverni, Marco; Martin, Denis; Grandjean, Nicolas
2016 IEEE Photonics Conference 2016年10月招待有り
17. Electrical Properties of Mg-doped GaN with High Acceptor Concentrations Okumura, Hironori; Marco Malinverni; Denis Martin; Nicolas Grandjean
19th International Conference on Molecular Beam Epitaxy 2016年9月
18. P-type Doping Control of Mg-doped AlGaN for Deep-UV LEDs Okumura,Hironori; Yoshitaka,Taniyasu; Hideki,Yamamoto
CSW 2015 2015年6月28日
19. Future of materials science contributing to the carbon neutrality Okumura, Hironori
Tsukuba Conference 招待有り
20. GaNプロセスの現状と放射線検出器の作製奥村, 宏典
Platform B (Silicon) meeting 招待有り