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奥村宏典

Okumura, Hironori

数理物質系 , 助教
Faculty of Pure and Applied Sciences , Assistant Professor

https://sites.google.com/view/okumura

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

21. N-Polar Polarization-Doped FET Based on AlGaN/AlN on SiC Lemettinen, Jori; Chowdhury, Nadim; Okumura, Hironori; Kim, Iurii (+1 著者) Palacios, Tomas
IEEE ELECTRON DEVICE LETTERS 40: 1245 (2019) Semantic Scholar
22. Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010) Okumura,Hironori; Kato,Yuji; Oshima,Takayoshi; Palacios,Tomás
Jpn. J. Appl. Phys. 58: SBBD12 (2019) Semantic Scholar
23. Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution Okumura, Hironori
JAPANESE JOURNAL OF APPLIED PHYSICS 58: (2019) Semantic Scholar
24. N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications Lemettinen, Jori; Okumura, Hironori; Palacios, Tomás; Suihkonen, Sami
Applied Physics Express 11: 101002 (2018) Semantic Scholar
25. AlN metal–semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira (+2 著者) Palacios, Tomás
Japanese Journal of Applied Physics 57: 04FR11 (2018) Semantic Scholar
26. MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality J. Lemettinen; H. Okumura; I. Kim; C. Kauppinen (+1 著者) S. Suihkonen
Journal of Crystal Growth 487: 12 (2018) Semantic Scholar
27. MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC J. Lemettinen; H. Okumura; I. Kim; M. Rudzinski (+2 著者) S. Suihkonen
Journal of Crystal Growth 487: 50 (2018) Semantic Scholar
28. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Yuhao Zhang; Zhihong Liu; Marko J. Tadjer; Min Sun (+12 著者) Tomas Palacios
IEEE ELECTRON DEVICE LETTERS 38: 1097 (2017) Semantic Scholar
29. Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN Hironori Okumura; Denis Martin; Nicolas Grandjean
APPLIED PHYSICS LETTERS 109: (2016) Semantic Scholar
30. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam Akira Uedono; Marco Malinverni; Denis Martin; Hironori Okumura (+1 著者) Nicolas Grandjean
JOURNAL OF APPLIED PHYSICS 119: (2016) Semantic Scholar
31. Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy Hironori Okumura; Denis Martin; Marco Malinverni; Nicolas Grandjean
APPLIED PHYSICS LETTERS 108: 072102 (2016) Semantic Scholar
32. Systematic investigation of the growth rate of β-Ga2O3 (010) by plasma-assisted molecular beam epitaxy Hironori Okumura; Masao Kita; Kohei Sasaki; Akito Kuramata (+1 著者) James S Speck
APPLIED PHYSICS EXPRESS 7: 095501 (2014) Semantic Scholar
33. Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps Hironori Okumura; Tsunenobu Kimoto; Jun Suda
APPLIED PHYSICS LETTERS 105: 071603 (2014) Semantic Scholar
34. Growth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy Okumura,Hironori
APPLIED PHYSICS LETTERS 104: 012111 (2014)
35. Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular-beam epitaxy Mitsuaki Kaneko; Ryosuke Kikuchi; Hironori Okumura; Tsunenobu KimotoJun Suda
Japanese Journal of Applied Physics 52: (2013) Semantic Scholar
36. Optical properties of highly strained AlN coherently grown on 6H-SiC(0001) Mitsuaki Kaneko; Hironori Okumura; Ryota Ishii; Mitsuru Funato (+2 著者) Jun Suda
Applied Physics Express 6: 62604 (2013) Semantic Scholar
37. Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy Hironori Okumura; Tsunenobu Kimoto; Jun Suda
APPLIED PHYSICS EXPRESS 5: (2012) Semantic Scholar
38. AIN/GaN short-period superlattice coherently grown on 6H-SiC(0001) substrates by molecular beam epitaxy Ryosuke Kikuchi; Hironori Okumura; Mitsuaki Kaneko; Tsunenobu KimotoJun Suda
Applied Physics Express 5: (2012) Semantic Scholar
39. Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000(1)over-bar) Substrate by Molecular-Beam Epitaxy Hironori Okumura; Tsunenobu Kimoto; Jun Suda
JAPANESE JOURNAL OF APPLIED PHYSICS 51: (2012) Semantic Scholar
40. Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth Hironori Okumura; Tsunenobu Kimoto; Jun Suda
APPLIED PHYSICS EXPRESS 4: (2011) Semantic Scholar

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1. 欧米大学の研究環境奥村, 宏典
公益社団法人日本表面科学会 2016年
2. Optronics 谷保,芳孝; 奥村,宏典; 西中,淳一; 熊倉,一英; 山本,秀樹
2015年11月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Alpha-particle detectors with GaN PiN homoepitaxial layer Okumura, Hironori; Ogawara, Yohei; Togawa, Maanbu; Miyahara, Masaya; Nishinaga, Jiro; Imura, Masataka; Isobe, Tadaaki
2021 International Conference on Solid State Devices and Materials 2021年9月6日
3. Electrical property of n-type β-(AlGa)2O3 layers with low Al composition Okumura,Hironori
8th Asian Conference on Crystal Growth and Crystal Technology 2021年3月1日
4. Growth and electrical property of n-type β-(AlGa)2O3 layers Okumura,Hironori
Virtual Workshop on Materials Science and Advanced Electronics 2021年2月1日招待有り
5. Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3 Traore, Aboulaye; Gouveia, Maria; Hironori, Okumura; Mannequin, Cedric; Fassion, Andrea; Sakurai, Takeaki
2020 International Conference on Solid State Devices and Materials SSDM 2020 2020年9月27日
6. (AlGa)2O3/Ga2O3 resonant tunneling diodes Okumura,Hironori
Compound Semiconductor Week 2020 2020年5月17日
7. Demonstration of m-plane GaN MOSFETs Okumura,Hironori; Takahashi Tokio; Shimizu Mitsuaki
2019 International Conference on Solid State Devices and Materials 2019年9月2日
8. Demonstration of (AlGa)2O3-channel MOSFETs Okumura,Hironori
2019 International Workshop on Gallium Oxide and related materials 2019年8月12日
9. N-polar AlN POLFET Okumura, Hironori; Lemettinen, Jori; Suihkonen, Sami; Palacios, Tomás
International Workshop on Nitride Semiconductors 2018年11月11日
10. Demonstration of beta-(AlGa)2O3(010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V Okumura, Hironori; Kato, Yuji; Ohshima, Takayoshi; Palacios, Tomas
2018 International Conference on Solid State Devices and Materials 2018年9月9日
11. Nitrogen-face AlN-based field-effect transistors Okumura, Hironori; Lemettinen, Jori; Suihkonen, Sami; Palacios, Tomas
Compound Semiconductor Week 2018 2018年5月29日 Tomas Palacios
12. AlN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori
The 2017 MRS Fall Meeting & Exhibit 2017年11月26日
13. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
14. Electrical Properties of Si-Ion Implanted AlN Okumura, Hironori; Sami Suihkonen; Tomas Palacios
9th International Conference on Nitride Semiconductors 2017年7月
15. Electrical Properties of Mg-doped GaN with High Acceptor Concentrations Okumura, Hironori; Marco Malinverni; Denis Martin; Nicolas Grandjean
2016 Materials Research Societies Fall meeting 2016年12月
16. Highly p-type GaN for Advanced Optoelectronic Devices Okumura, Hironori; Malinverni, Marco; Martin, Denis; Grandjean, Nicolas
2016 IEEE Photonics Conference 2016年10月招待有り
17. Electrical Properties of Mg-doped GaN with High Acceptor Concentrations Okumura, Hironori; Marco Malinverni; Denis Martin; Nicolas Grandjean
19th International Conference on Molecular Beam Epitaxy 2016年9月
18. P-type Doping Control of Mg-doped AlGaN for Deep-UV LEDs Okumura,Hironori; Yoshitaka,Taniyasu; Hideki,Yamamoto
CSW 2015 2015年6月28日
19. Future of materials science contributing to the carbon neutrality Okumura, Hironori
Tsukuba Conference 招待有り
20. GaNプロセスの現状と放射線検出器の作製奥村, 宏典
Platform B (Silicon) meeting 招待有り