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奥村宏典

Okumura, Hironori

数理物質系 , 准教授
Institute of Pure and Applied Sciences , Associate Professor

https://sites.google.com/view/okumura

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

41. Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(000(1)over-bar) Substrate by Molecular-Beam Epitaxy Hironori Okumura; Tsunenobu Kimoto; Jun Suda
JAPANESE JOURNAL OF APPLIED PHYSICS 51: (2012) Semantic Scholar
42. Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth Hironori Okumura; Tsunenobu Kimoto; Jun Suda
APPLIED PHYSICS EXPRESS 4: (2011) Semantic Scholar
43. Enhancement of initial layer-by-layer growth and reduction of threading dislocation density by optimized Ga pre-irradiation in molecular-beam epitaxy of 2H-AlN on 6H-SiC (0001) Hironori Okumura; Tsunenobu Kimoto; Jun Suda
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 7: (2010) Semantic Scholar
44. In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face Kazuhiro Akiyama; Yasuhiro Ishii; Sohei Abe; Hisashi Murakami (+4 著者) Akinori Koukitu
JAPANESE JOURNAL OF APPLIED PHYSICS 48: (2009) Semantic Scholar
45. Observation of novel defect structure in 2H-AlN grown on 6H-SiC(0001) substrates with 3-bilayer-height step-and-terrace structures Hironori Okumura; Masahiro Horita; Tsunenobu Kimoto; Jun Suda
Physica Status Solidi (A) Applications and Materials Science 206: 1187 (2009) Semantic Scholar

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1. ARIM秀でた利用成果優秀賞奥村宏典
ARIM Japan 2025年4月
2. 欧米大学の研究環境奥村, 宏典
公益社団法人日本表面科学会 2016年
3. Optronics 谷保,芳孝; 奥村,宏典; 西中,淳一; 熊倉,一英; 山本,秀樹
2015年11月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Alpha-particle detectors with GaN PiN homoepitaxial layer Okumura, Hironori; Ogawara, Yohei; Togawa, Maanbu; Miyahara, Masaya; Nishinaga, Jiro; Imura, Masataka; Isobe, Tadaaki
2021 International Conference on Solid State Devices and Materials 2021年9月6日
3. Electrical property of n-type β-(AlGa)2O3 layers with low Al composition Okumura,Hironori
8th Asian Conference on Crystal Growth and Crystal Technology 2021年3月1日
4. Growth and electrical property of n-type β-(AlGa)2O3 layers Okumura,Hironori
Virtual Workshop on Materials Science and Advanced Electronics 2021年2月1日招待有り
5. Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3 Traore, Aboulaye; Gouveia, Maria; Hironori, Okumura; Mannequin, Cedric; Fassion, Andrea; Sakurai, Takeaki
2020 International Conference on Solid State Devices and Materials SSDM 2020 2020年9月27日
6. (AlGa)2O3/Ga2O3 resonant tunneling diodes Okumura,Hironori
Compound Semiconductor Week 2020 2020年5月17日
7. Demonstration of m-plane GaN MOSFETs Okumura,Hironori; Takahashi Tokio; Shimizu Mitsuaki
2019 International Conference on Solid State Devices and Materials 2019年9月2日
8. Demonstration of (AlGa)2O3-channel MOSFETs Okumura,Hironori
2019 International Workshop on Gallium Oxide and related materials 2019年8月12日
9. N-polar AlN POLFET Okumura, Hironori; Lemettinen, Jori; Suihkonen, Sami; Palacios, Tomás
International Workshop on Nitride Semiconductors 2018年11月11日
10. Demonstration of beta-(AlGa)2O3(010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V Okumura, Hironori; Kato, Yuji; Ohshima, Takayoshi; Palacios, Tomas
2018 International Conference on Solid State Devices and Materials 2018年9月9日
11. Nitrogen-face AlN-based field-effect transistors Okumura, Hironori; Lemettinen, Jori; Suihkonen, Sami; Palacios, Tomas
Compound Semiconductor Week 2018 2018年5月29日 Tomas Palacios
12. AlN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori
The 2017 MRS Fall Meeting & Exhibit 2017年11月26日
13. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
14. Electrical Properties of Si-Ion Implanted AlN Okumura, Hironori; Sami Suihkonen; Tomas Palacios
9th International Conference on Nitride Semiconductors 2017年7月
15. Electrical Properties of Mg-doped GaN with High Acceptor Concentrations Okumura, Hironori; Marco Malinverni; Denis Martin; Nicolas Grandjean
2016 Materials Research Societies Fall meeting 2016年12月
16. Highly p-type GaN for Advanced Optoelectronic Devices Okumura, Hironori; Malinverni, Marco; Martin, Denis; Grandjean, Nicolas
2016 IEEE Photonics Conference 2016年10月招待有り
17. Electrical Properties of Mg-doped GaN with High Acceptor Concentrations Okumura, Hironori; Marco Malinverni; Denis Martin; Nicolas Grandjean
19th International Conference on Molecular Beam Epitaxy 2016年9月
18. P-type Doping Control of Mg-doped AlGaN for Deep-UV LEDs Okumura,Hironori; Yoshitaka,Taniyasu; Hideki,Yamamoto
CSW 2015 2015年6月28日
19. Si-doped alpha-(AlGa)2O3 growth OKUMURA, Hironori
NTU-UGA-UT Trilateral Workshop Prof. Chao-Hsin Wu 招待有り
20. GaN and CIGS particle detectors OKUMURA, Hironori
QGP 国際研究センター・キックオフシンポジウム招待有り