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奥村 宏典

Okumura, Hironori

数理物質系 , 助教
Faculty of Pure and Applied Sciences , Assistant Professor

https://sites.google.com/view/okumura

＃038 800度でも動きます！半導体素子の耐熱性の限界に挑戦

2023-08-09

奥村 宏典
800℃を超える高温環境で利用可能な半導体素子を開発

2023-06-30

奥村 宏典
TRiSTAR第1期フェロー（2022年前期）奥村 宏典

2022-04-01

奥村 宏典
オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。
  1. 1. Fully vertical AlN-on-SiC Schottky barrier diodes Okumura, Hironori; Imura, Masataka; Miyazawa, Fuga; Mainini, Lorenzo
      JAPANESE JOURNAL OF APPLIED PHYSICS 63: (2024)
  2. 2. Study of radiation tolerance of Cu (In, Ga) Se2 detector Itabashi, Kosuke; Fujii, S; Imura, M; Isobe, T (+3 著者) Togawa, M
      Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1067: (2024) Semantic Scholar
  3. 3. MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates OKUMURA, Hironori; Varley, Joel B
      Japanese Journal of Applied Physics 63: 075502 (2024) Semantic Scholar
  4. 4. The CIGS semiconductor detector for particle physics Togawa, Manabu; Fujii, S; Imura, M; Itabashi, K (+3 著者) Okumura, Hironori
      Journal of Instrumentation 19: C05042 (2024) Semantic Scholar
  5. 5. Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy Okumura, Hironori; Fassion, Andréa; Mannequin; Cédric
      Japanese Journal of Applied Physics 63: 055502 (2024) Semantic Scholar
  6. 6. Electrical properties of vertical Cu2O/β-Ga2O3 (001) p-n diodes Jia, Yun; Sato, Sora; Traore, Aboulaye; Morita, Ryo (+4 著者) Sakurai, Takeaki
      AIP ADVANCES 13: (2023) Semantic Scholar
  7. 7. Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates Okumura, Hironori; Watanabe, Yasuhiro; Shibata, Tomohiko
      Applied Physics Express 16: 064005 (2023) Semantic Scholar
  8. 8. Degradation of vertical GaN diodes during proton and xenon-ion irradiation Okumura, Hironori; Ogawara, Yohei; Togawa, Manabu; Miyahara, Masaya (+3 著者) Imura, Masataka
      Japanese Journal of Applied Physics 62: 064001 (2023) Semantic Scholar
  9. 9. Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy Okumura, Hironori
      Japanese Journal of Applied Physics 62: 065504 (2023) Semantic Scholar
  10. 10. Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam Nishinaga, Jiro; Togawa, Manabu; Miyahara, Masaya; Itabashi, Kosuke (+3 著者) Ishizuka, Shogo
      Japanese Journal of Applied Physics 62: SK1014 (2023) Semantic Scholar
  11. 11. Mg implantation in AlN layers on sapphire substrates Okumura, Hironori; Uedono, Akira
      Jpn. J. Appl. Phys. 62: 020901 (2023) Semantic Scholar
  12. 12. Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection Imura, Masataka; Togawa, Manabu; Miyahara, Masaya; Okumura, Hironori (+2 著者) Koide, Yasuo
      Functional Diamond 2: 167 (2023) Semantic Scholar
  13. 13. Sn and Si doping of α-Al2O3 (10-10) layers grown by plasma-assisted molecular beam epitaxy Okumura, Hironori
      Japanese Journal of Applied Physics 61: 125505 (2022) Semantic Scholar
  14. 14. Photoconductivity buildup and decay kinetics in unintentionally doped β-Ga2O3 Aboulaye, Traore; Okumura, Hironori; Sakurai, Takeaki
      JAPANESE JOURNAL OF APPLIED PHYSICS 61: (2022) Semantic Scholar
  15. 15. Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing Hironori Okumura; Yasuhiro Watanabe; Tomohiko Shibata; Kohei Yoshizawa (+5 著者) Tomas Palacios
      Japanese Journal of Applied Physics 61: 026501 (2022) Semantic Scholar
  16. 16. Optical and electrical properties of silicon-implanted α-Al2O3 Hironori, Okumura; Riena, Jinno; Akira, Uedono; Masataka, Imura
      Japanese Journal of Applied Physics 60: (2021) Semantic Scholar
  17. 17. Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates Hironori, Okumura
      Japanese Journal of Applied Physics 60: 065504 (2021) Semantic Scholar
  18. 18. Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3 Traore, Aboulaye; Gouveia, Maria; Okumura, Hironori; Mannequin, Cedric (+1 著者) Sakurai, Takeaki
      Japanese Journal of Applied Physics 60: SBBD15 (2021) Semantic Scholar
  19. 19. Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy Okumura,Hironori
      Japanese Journal of Applied Physics 59: 075503 (2020) Semantic Scholar
  20. 20. Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination Okumura, Hironori; Tanaka, Taketoshi
      Japanese Journal of Applied Physics 58: 120902 (2019) Semantic Scholar
1 2 3
  1. 1. 欧米大学の研究環境 奥村, 宏典
    公益社団法人 日本表面科学会 2016年
  2. 2. Optronics 谷保,芳孝; 奥村,宏典; 西中,淳一; 熊倉,一英; 山本,秀樹
    2015年11月

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