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上殿 明良

Uedono, Akira

数理物質系 , 教授
Faculty of Pure and Applied Sciences , Professor

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  1. 1. Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation Akira Uedono; Ryo Tanaka; Shinya Takashima; Katsunori Ueno (+7 著者) Michal Bockowski
      physica status solidi (b) (2024) Semantic Scholar
  2. 2. Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N K. Shima; R. Tanaka; S. Takashima; K. Ueno (+4 著者) S. F. Chichibu
      Proceedings of IWJT2023: IEEE Xplore Digital Library (2023) 1 - 4 (2023)
  3. 3. Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam Uedono, A.; Kimura, Y.; Hoshii, T.; Kakushima, K. (+5 著者) Tsutsui, K.
      Journal of Applied Physics 133: (2023) Semantic Scholar
  4. 4. Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations Harashima, Y; Koga, H; Ni, Z; Yonehara, T (+7 著者) Shigeta, Y
      APPLIED PHYSICS LETTERS 122: (2023) Semantic Scholar
  5. 5. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam Akira Uedono; Hideki Sakurai; Jun Uzuhashi; Tetsuo Narita (+8 著者) Tetsu Kachi
      Gallium Nitride Materials and Devices XVIII (2023) Semantic Scholar
  6. 6. Mg implantation in AlN layers on sapphire substrates Okumura, H.; Uedono, A.
      Japanese Journal of Applied Physics 62: 020901 (2023) Semantic Scholar
  7. 7. Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L. (+6 著者) Iacovo, S.
      ECS Journal of Solid State Science and Technology 12: (2023) Semantic Scholar
  8. 8. Precipitation Behavior in Low-alloyed Mg–Ca–Zn Alloys Li, Z.H.; Sasaki, T.T.; Cheng, D.; Wang, K. (+3 著者) Hono, K.
      Minerals, Metals and Materials Series (2023)
  9. 9. Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE Sierakowski, K.; Jakiela, R.; Jaroszynski, P.; Fijalkowski, M. (+5 著者) Bockowski, M.
      Materials Science in Semiconductor Processing 167: (2023) Semantic Scholar
  10. 10. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application Sumiya, M.; Goto, O.; Takahara, Y.; Imanaka, Y. (+6 著者) Fujikura, H.
      Japanese Journal of Applied Physics 62: (2023) Semantic Scholar
  11. 11. Inorganic Temporary Direct Bonding for Collective Die to Wafer Hybrid Bonding Fumihiro Inoue; Shunsuke Teranishi; Tomoya Iwata; Koki Onishi (+4 著者) Akira Uedono
      Proceedings - Electronic Components and Technology Conference 2023-May: 556 - 563 (2023) Semantic Scholar
  12. 12. Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations Yosuke Harashima; Hiroaki Koga; Zeyuan Ni; Takehiro Yonehara (+7 著者) Yasuteru Shigeta
      2022 International Symposium on Semiconductor Manufacturing (ISSM) (2022) Semantic Scholar
  13. 13. Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams Uedono, A.; Takahashi, N.; Hasunuma, R.; Harashima, Y. (+8 著者) Ishibashi, S.
      Thin Solid Films 762: 139557 - 139557 (2022) Semantic Scholar
  14. 14. Effects of Hydrogen Incorporation on Mg Diffusion in GaN-Doped with Mg Ions via Ultra-High-Pressure Annealing Narita, T.; Uedono, A.; Kachi, T.
      Physica Status Solidi (B) Basic Research 259: 2200235 - 2200235 (2022) Semantic Scholar
  15. 15. Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21) L. Y. Li; K. Shima; M. Yamanaka; T. Egawa (+4 著者) S. F. Chichibu
      Journal of Applied Physics 132: 163102 - 163102 (2022) Semantic Scholar
  16. 16. Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation Akira Uedono; Hideki Sakurai; Jun Uzuhashi; Tetsuo Narita (+8 著者) Tetsu Kachi
      physica status solidi (b) 2200183 - 2200183 (2022) Semantic Scholar
  17. 17. Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1−x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy Shigefusa F. Chichibu; Hideto Miyake; Akira Uedono
      Japanese Journal of Applied Physics 61: 050501 - 050501 (2022) Semantic Scholar
  18. 18. Structure-Thermal Property Relationships of Polysilsesquioxanes for Thermal Insulation Materials Hamada, T.; Goto, T.; Takase, S.; Okada, K. (+1 著者) Ohshita, J.
      ACS Applied Polymer Materials 4: 2851 - 2859 (2022) Semantic Scholar
  19. 19. Negatively charged boron vacancy center in diamond Umeda, T.; Watanabe, K.; Hara, H.; Sumiya, H. (+6 著者) Isoya, J.
      Physical Review B 105: (2022) Semantic Scholar
  20. 20. Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing Okumura, H.; Watanabe, Y.; Shibata, T.; Yoshizawa, K. (+5 著者) Palacios, T.
      Japanese Journal of Applied Physics 61: 026501 - 026501 (2022) Semantic Scholar
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  1. 1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
    IOP PUBLISHING LTD 2011年1月
  2. 2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
    SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
  3. 3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
    IEEE 2009年1月 (ISBN: 9781424444915)
  4. 4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
    WILEY-V C H VERLAG GMBH 2007年1月
  5. 5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
    IEEE 2006年1月 (ISBN: 1424400163)
  6. 6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
    IOP PUBLISHING LTD 2005年1月
  7. 7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
    MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
  8. 8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
    TRANS TECH PUBLICATIONS LTD 2004年1月
  1. 1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
    The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
  2. 2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
    Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
  3. 3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
    Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
  4. 4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
    15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
  5. 5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
    15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
  6. 6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
    19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
  7. 7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
    6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
  8. 8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
    Compound Semiconductor Week (CSW) Conference 2019年5月19日
  9. 9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
    International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
  10. 10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
    2018年第79応用物理学会 秋季学術講演会 2018年9月18日
  11. 11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
    19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
  12. 12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
    International Thin Films Conference (TACT) 2017年10月15日
  13. 13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
    23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
  14. 14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
    International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
  15. 15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
    29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
  16. 16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
    29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
  17. 17. 筑波大学タンデム加速器施設UTTACの現状（2016年度） 森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場 大一郎; 笹 公和; 上殿 明良
    第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
  18. 18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
    12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
  19. 19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
    Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
  20. 20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
    Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
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