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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

1. Roles of Al-vacancy complexes on the luminescence spectra of Si-doped AlN grown by halide vapor phase epitaxy S. F. Chichibu; K. Kikuchi; B. Moody; S. Mita (+5 著者) K. Shima
Applied Physics Letters 126: 111905 1 (2025)
2. Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams Akira Uedono; Ryu Hasunuma; Koki Onishi; Hayato Kitagawa (+2 著者) Nagayasu Oshima
Journal of Applied Physics (2024) Semantic Scholar
3. Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography Akira Uedono; Claudia Fleischmann; Jean-Philippe Soulié; Mustafa Ayyad (+6 著者) Shoji Ishibashi
ACS Applied Electronic Materials (2024) Semantic Scholar
4. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers Shigefusa F. Chichibu; Kohei Shima; Akira Uedono; Shoji Ishibashi (+15 著者) Yasuo Koide
Journal of Applied Physics 135: (2024) Semantic Scholar
5. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method K. Shima; K. Kurimoto; Q. Bao; Y. Mikawa (+5 著者) S. F. Chichibu
Applied Physics Letters 124: (2024) Semantic Scholar
6. Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation Akira Uedono; Ryo Tanaka; Shinya Takashima; Katsunori Ueno (+7 著者) Michal Bockowski
physica status solidi (b) (2024) Semantic Scholar
7. Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy T. Kimura; H. Shimazu; K. Kataoka; K. Itoh (+6 著者) D. Nakamura
Applied Physics Letters 124: (2024)
8. Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N K. Shima; R. Tanaka; S. Takashima; K. Ueno (+4 著者) S. F. Chichibu
Proceedings of IWJT2023: IEEE Xplore Digital Library (2023) 1 (2023)
9. Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam Uedono, A.; Kimura, Y.; Hoshii, T.; Kakushima, K. (+5 著者) Tsutsui, K.
Journal of Applied Physics 133: (2023) Semantic Scholar
10. Finite temperature effects on the structural stability of Si-doped HfO₂ using first-principles calculations Harashima, Y; Koga, H; Ni, Z; Yonehara, T (+7 著者) Shigeta, Y
APPLIED PHYSICS LETTERS 122: (2023) Semantic Scholar
11. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam Akira Uedono; Hideki Sakurai; Jun Uzuhashi; Tetsuo Narita (+8 著者) Tetsu Kachi
Gallium Nitride Materials and Devices XVIII (2023) Semantic Scholar
12. Mg implantation in AlN layers on sapphire substrates Okumura, H.; Uedono, A.
Japanese Journal of Applied Physics 62: 020901 (2023) Semantic Scholar
13. Inorganic Temporary Direct Bonding for Collective Die to Wafer Hybrid Bonding Fumihiro Inoue; Shunsuke Teranishi; Tomoya Iwata; Koki Onishi (+4 著者) Akira Uedono
Proceedings - Electronic Components and Technology Conference 2023-May: 556 (2023) Semantic Scholar
14. Origin of Voids at the SiO₂/SiO₂ and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance Nagano, F.; Inoue, F.; Phommahaxay, A.; Peng, L. (+6 著者) Iacovo, S.
ECS Journal of Solid State Science and Technology 12: (2023) Semantic Scholar
15. Precipitation Behavior in Low-alloyed Mg–Ca–Zn Alloys Li, Z.H.; Sasaki, T.T.; Cheng, D.; Wang, K. (+3 著者) Hono, K.
Minerals, Metals and Materials Series (2023)
16. Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE Sierakowski, K.; Jakiela, R.; Jaroszynski, P.; Fijalkowski, M. (+5 著者) Bockowski, M.
Materials Science in Semiconductor Processing 167: (2023) Semantic Scholar
17. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application Sumiya, M.; Goto, O.; Takahara, Y.; Imanaka, Y. (+6 著者) Fujikura, H.
Japanese Journal of Applied Physics 62: (2023) Semantic Scholar
18. Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations Yosuke Harashima; Hiroaki Koga; Zeyuan Ni; Takehiro Yonehara (+7 著者) Yasuteru Shigeta
2022 International Symposium on Semiconductor Manufacturing (ISSM) (2022) Semantic Scholar
19. Effects of Hydrogen Incorporation on Mg Diffusion in GaN-Doped with Mg Ions via Ultra-High-Pressure Annealing Narita, T.; Uedono, A.; Kachi, T.
Physica Status Solidi (B) Basic Research 259: 2200235 (2022) Semantic Scholar
20. Vacancy-type defects in TiN/ZrO₂/TiN capacitors probed by monoenergetic positron beams Uedono, A.; Takahashi, N.; Hasunuma, R.; Harashima, Y. (+8 著者) Ishibashi, S.
Thin Solid Films 762: 139557 (2022) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日