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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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181. Agglomeration and dissociation of vacancies in electroless deposited Cu films studied by monoenergetic positron beams A. Uedono; Y. Dordi; S. Li; G. Mizunaga (+2 著者) R. Suzuki
2012 IEEE International Interconnect Technology Conference, IITC 2012 (2012) Semantic Scholar
182. Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams A. Uedono; K. Tenjinbayashi; T. Tsutsui; Y. Shimahara (+4 著者) S. Ishibashi
Journal of Applied Physics 111: (2012) Semantic Scholar
183. Vacancy-type defects in In xGa 1-xN alloys probed using a monoenergetic positron beam Uedono, A.; Ishibashi, S.; Watanabe, T.; Wang, X.Q. (+4 著者) Shen, B.
Journal of Applied Physics 112: (2012) Semantic Scholar
184. Electronic structure and Fermi surface of the weak ferromagnet Ni 3Al A. S. Hamid; A. Uedono; Zs. Major; T. D. Haynes (+3 著者) D. Fort
Physical Review B - Condensed Matter and Materials Physics 84: (2011) Semantic Scholar
185. 21aJA-12 低速陽電子ビームを用いた大気中試料の空孔分析法の開発(21aJA X線・粒子線(電子線・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン)) 大島, 永康; オローク, ブライアン; 黒田, 隆之助; 鈴木, 良一 (+5 著者) 林崎, 規託
Meeting abstracts of the Physical Society of Japan 66: 971 (2011)
186. Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air Nagayasu Oshima; Brian E. O'Rourke; Ryunosuke Kuroda; Ryoichi Suzuki (+4 著者) Noriyosu Hayashizaki
APPLIED PHYSICS EXPRESS 4: 66701 (2011) Semantic Scholar
187. 27pTN-4 低速陽電子ビーム大気取り出し法の研究(27pTN X線・粒子線(陽電子・電子線),領域10(誘電体,格子欠陥,X線・粒子線,フォノン)) 大島, 永康; オローク, ブライアン; 黒田, 隆之助; 鈴木, 良一 (+4 著者) 林崎, 規託
Meeting abstracts of the Physical Society of Japan 66: 985 (2011)
188. Collateral evidence for an excellent radiative performance of Al xGa1-xN alloy films of high AlN mole fractions Chichibu, S.F.; Hazu, K.; Onuma, T.; Uedono, A.
Applied Physics Letters 99: (2011) Semantic Scholar
189. Investigating the binding properties of porous drug delivery systems using nuclear sensors (radiotracers) and positron annihilation lifetime spectroscopy - Predicting conditions for optimum performance Mume, E.; Lynch, D.E.; Uedono, A.; Smith, S.V.
Dalton Transactions 40: 6278 (2011) Semantic Scholar
190. Slow positron beam apparatus for surface and subsurface analysis of samples in air Oshima, N.; O'Rourke, B.E.; Kuroda, R.; Suzuki, R. (+4 著者) Hayashizaki, N.
Applied Physics Express 4: (2011) Semantic Scholar
191. Structure-modification model of porogen-based porous SiOC film with ultraviolet curing Oka, Y.; Uedono, A.; Goto, K.; Hirose, Y. (+2 著者) Asai, K.
Japanese Journal of Applied Physics 50: 05EB06 (2011) Semantic Scholar
192. Impact of Cu/III ratio on the near-surface defects in polycrystalline CuGaSe2 thin films Islam, M.M.; Uedono, A.; Ishibashi, S.; Tenjinbayashi, K. (+5 著者) Akimoto, K.
Applied Physics Letters 98: (2011) Semantic Scholar
193. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Akira Uedono; Shoji Ishibashi; Shigefusa F. Chichibu; Katsuhiro Akimoto
Proceedings of SPIE - The International Society for Optical Engineering 7939: 793901-1 (2011) Semantic Scholar
194. Application of positron annihilation technique to front and backend processes for modern LSI devices A. Uedono; S. Ishibashi; N. Oshima; T. OhdairaR. Suzuki
Journal of Physics: Conference Series 262: (2011) Semantic Scholar
195. Imaging of the distribution of average positron lifetimes by using a positron probe microanalyzer N. Oshima; R. Suzuki; T. Ohdaira; A. Kinomura (+4 著者) M. Fujinami
Journal of Physics: Conference Series 262: (2011) Semantic Scholar
196. The role of positron annihilation lifetime studies and nuclear sensors for characterising porous materials E. Mume; A. Uedono; G. Mizunaga; D. E. LynchS. V. Smith
12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECHNIQUES (SLOPOS12) 262: (2011) Semantic Scholar
197. Understanding the effect of nanoporosity on optimizing the performance of self-healing materials for anti-corrosion applications S. Sellaiyan; S. V. Smith; A. E. Hughes; A. Miller (+1 著者) A. Uedono
Journal of Physics: Conference Series 262: (2011) Semantic Scholar
198. Major impacts of point defects and impurities on the carrier recombination dynamics in AlN S. F. Chichibu; T. Onuma; K. Hazu; A. Uedono
Applied Physics Letters 97: 201904-1 (2010) Semantic Scholar
199. Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam Akira Uedono; Kazuo Tsutsui; Shoji Ishibashi; Hiromichi Watanabe (+4 著者) Hiroshi Iwai
JAPANESE JOURNAL OF APPLIED PHYSICS 49: (2010) Semantic Scholar
200. 陽電子消滅による材料評価技術上殿, 明良
應用物理 79: 307 (2010)

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日