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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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201. 20aHT-7 陽電子プローブマイクロアナライザーによる延伸鉄試料の欠陥評価(20aHT 領域10 格子欠陥・ナノ構造(水素,ナノ粒子,金属),領域10(誘電体,格子欠陥,X線・粒子線,フォノン)) 大島, 永康; 鈴木, 良一; 大平, 俊行; 木野村, 淳 (+5 著者) 鈴木, 茂
Meeting abstracts of the Physical Society of Japan 65: 970 (2010)
202. Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam Uedono, A.; Tsutsui, K.; Ishibashi, S.; Watanabe, H. (+4 著者) Iwai, H.
Japanese Journal of Applied Physics 49: 51301 (2010) Semantic Scholar
203. 低速陽電子ビームを用いたCu/low-k配線構造中の欠陥検出(配線・実装技術と関連材料技術) 上殿, 明良; 井上, 尚也; 林, 喜宏; 江口, 和弘 (+5 著者) 鈴木, 良一
Technical report of IEICE. SDM 109: 49 (2010)
204. Metal ion binding properties of novel wool powders Naik, R.; Wen, G.; Dharmaprakash, M.S.; Hureau, S. (+4 著者) Smith, S.V.
Journal of Applied Polymer Science 115: 1642 (2010) Semantic Scholar
205. Epitaxial DyScO3 films as passivation layers suppress the diffusion of oxygen vacancies in SrTiO3 Yuan, G.; Nishio, K.; Lippmaa, M.; Uedono, A.
Journal of Physics D: Applied Physics 43: (2010) Semantic Scholar
206. Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN Chen, S.; Uedono, A.; Ishibashi, S.; Tomita, S. (+1 著者) Akimoto, K.
Applied Physics Letters 96: (2010) Semantic Scholar
207. Identification of extremely radiative nature of AlN by time-resolved photoluminescence Onuma, T.; Hazu, K.; Uedono, A.; Sota, T.Chichibu, S.F.
Applied Physics Letters 96: (2010) Semantic Scholar
208. Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10̄1̄1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy Onuma, T.; Uedono, A.; Asamizu, H.; Sato, H. (+4 著者) Chichibu, S.F.
Applied Physics Letters 96: (2010) Semantic Scholar
209. Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy Yoshikawa, A.; Wang, X.; Ishitani, Y.; Uedono, A.
Physica Status Solidi (A) Applications and Materials Science 207: 1011 (2010) Semantic Scholar
210. Suppression of Anomalous Threshold Voltage Increase with Area Scaling for Mg- or La-incorporated High-k/Metal Gate nMISFETs in Deeply Scaled Region T. Morooka; M. Sato; T. Matsuki; T. Suzuki (+9 著者) Y. Ohji
2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS 33 (2010)
211. Degradation in HfSiON Film Induced by Electrical Stress Application R. Hasunuma; C. Tamura; T. Nomura; Y. Kikuchi (+6 著者) K. Yamabe
DIELECTRICS FOR NANOSYSTEMS 4: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING 28: 263 (2010) Semantic Scholar
212. Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation Akira Uedono; Kazuo Tsutsui; Shoji Ishibashi; Hiromichi Watanabe (+5 著者) Hiroshi Iwai
IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology 149 (2010) Semantic Scholar
213. Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams A. Uedono; N. Inoue; Y. Hayashi; K. Eguchi (+5 著者) R. Suzuki
2010 IEEE International Interconnect Technology Conference, IITC 2010 (2010) Semantic Scholar
214. Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation Akira Uedono; Shoji Ishibashi; Nagayasu Oshima; Toshiyuki OhdairaRyoichi Suzuki
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings 1498 (2010) Semantic Scholar
215. Structure-modification model of porogen-based porous SiOC film with UV curing Y. Oka; A. Uedono; K. Goto; Y. Hirose (+2 著者) K. Asai
Advanced Metallization Conference (AMC) 173 (2010)
216. AlNエピタキシャル薄膜における励起子発光機構(窒化物及び混晶半導体デバイス) 尾沼, 猛儀; 羽豆, 耕治; 宗田, 孝之; 上殿, 明良秩父, 重英
IEICE technical report. Component parts and materials 109: 29 (2009)
217. AlNエピタキシャル薄膜における励起子発光機構(窒化物及び混晶半導体デバイス) 尾沼, 猛儀; 羽豆, 耕治; 宗田, 孝之; 上殿, 明良秩父, 重英
IEICE technical report. Electron devices 109: 29 (2009)
218. AlNエピタキシャル薄膜における励起子発光機構(窒化物及び混晶半導体デバイス) 尾沼, 猛儀; 羽豆, 耕治; 宗田, 孝之; 上殿, 明良秩父, 重英
Technical report of IEICE. LQE 109: 29 (2009)
219. 陽電子消滅による窒化物光半導体の点欠陥の評価(<特集>窒化物半導体結晶中の欠陥) 上殿, 明良; 石橋, 章司; 大島, 永康; 大平, 俊行鈴木, 良一
Journal of the Japanese Association of Crystal Growth 36: 155 (2009)
220. III族窒化物半導体(Al,Ga)Nにおける発光特性と点欠陥の相関関係(<特集>窒化物半導体結晶中の欠陥) 秩父, 重英; 上殿, 明良
Journal of the Japanese Association of Crystal Growth 36: 166 (2009)

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日