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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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241. 23pVE-10 陽電子プローブマイクロアナライザーによる欠陥分布の観察(23pVE 格子欠陥・ナノ構造(光物性・微粒子・水素・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性)) 大島, 永康; 鈴木, 良一; 大平, 俊行; 木野村, 淳 (+2 著者) 藤浪, 真紀
Meeting abstracts of the Physical Society of Japan 63: 896 (2008)
242. Annihilation characteristics of positrons in free-standing thin metal and polymer films Uedono, A.; Ito, K.; Nakamori, H.; Ata, S. (+12 著者) Fujinami, M.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 266: 750 (2008) Semantic Scholar
243. Brightness enhancement method for a high-intensity positron beam produced by an electron accelerator Oshima, N.; Suzuki, R.; Ohdaira, T.; Kinomura, A. (+2 著者) Fujinami, M.
Journal of Applied Physics 103: (2008) Semantic Scholar
244. Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam Uedono, A.; Shaoqiang, C.; Jongwon, S.; Ito, K. (+5 著者) Ishibashi, S.
Journal of Applied Physics 103: (2008) Semantic Scholar
245. Interlaboratory comparison of positron annihilation lifetime measurements for synthetic fused silica and polycarbonate Ito, K.; Oka, T.; Kobayashi, Y.; Shirai, Y. (+12 著者) Uedono, A.
Journal of Applied Physics 104: (2008) Semantic Scholar
246. Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy Takuya Hoshi; Takahiro Koyama; Mariko Sugawara; Akira Uedono (+3 著者) Shigefusa F. Chichibu
Physica Status Solidi (C) Current Topics in Solid State Physics 5: 2129 (2008) Semantic Scholar
247. Effect of Annealing on Electronic Characteristics of HfSiON Films Fabricated by Damascene Gate Process K. Yamabe; K. Murata; T. Hayashi; T. Tamura (+10 著者) R. Hasunuma
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 16: 521 (2008) Semantic Scholar
248. Impact of Al in Cu alloy interconnects on electro and stress migration reliabilities Maekawa, K.; Mori, K.; Suzumura, N.; Honda, K. (+3 著者) Kojima, M.
Microelectronic Engineering 85: 2137 (2008) Semantic Scholar
249. Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics M. Sato; N. Umezawa; N. Mise; S. Kamiyama (+12 著者) Y. Ohji
2008 SYMPOSIUM ON VLSI TECHNOLOGY 53 (2008)
250. Positron Beams generated by an Electron LINAC and their application to Nano-Structures at SPF-KEK T. Kurihara; X. Cao; M. Ikeda; A. Enomoto (+16 著者) M. Doyama
TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 33, NO 2 33: 267 (2008)
251. Impact of point defects on the luminescence properties of (Al,Ga)N Shigefusa F. Chichibu; Akira Uedono; Takeyoshi Onuma; Steven P. DenBaars (+2 著者) Shuji Nakamura
Materials Science Forum 590: 233 (2008)
252. Microstructural characterization of electroplated copper films on copper-alloy seed layer Yukinori Hirose; Kazuhito Honda; Kazuyoshi Maekawa; Hiroshi Miyazar (+1 著者) Kouichi Tsuji
BUNSEKI KAGAKU 56: 465 (2007)
253. Characterization of metal/high-k structures using monoenergetic positron beams Akira Uedono; Tatsuya Naito; Takashi Otsuka; Kenichi Ito (+11 著者) Keisaku Yamada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46: 3214 (2007) Semantic Scholar
254. Guiding principle of energy level controllability of silicon dangling bonds in HfSiON Naoto Umezawa; Kenji Shiraishi; Seiichi Miyazaki; Akira Uedono (+9 著者) Keisaku Yamada
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46: 1891 (2007) Semantic Scholar
255. 合金シードを用いるめっき銅薄膜のキャラクタリゼーション(<特集>機能性界面と分析化学) 廣瀬, 幸範; 本田, 和仁; 前川, 和義; 宮崎, 博史 (+1 著者) 辻, 幸一
Bunseki Kagaku 56: 465 (2007) Semantic Scholar
256. Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE Shimizu, Y.; Miyashita, N.; Mura, Y.; Uedono, A.Okada, Y.
Journal of Crystal Growth 301-302: 579 (2007) Semantic Scholar
257. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Chichibu, S.F.; Uedono, A.; Onuma, T.; Haskell, B.A. (+13 著者) Sota, T.
Philosophical Magazine 87: 2019 (2007) Semantic Scholar
258. Local bonding structure of high-stress silicon nitride film modified by UV curing for strained silicon technology beyond 45 nm node SoC devices Miyagawa, Y.; Murata, T.; Nishida, Y.; Nakai, T. (+4 著者) Yoneda, M.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46: 1984 (2007) Semantic Scholar
259. Defects in electroplated Cu and their impact on stress migration reliability studied using monoenergetic positron beams Uedono, A.; Suzuki, T.; Nakamura, T.; Ohdaira, T.Suzuki, R.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46: 1938 (2007) Semantic Scholar
260. Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by N H3 -source molecular beam epitaxy Koyama, T.; Sugawara, M.; Hoshi, T.; Uedono, A. (+3 著者) Chichibu, S.F.
Applied Physics Letters 90: (2007) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日