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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

261. Impact of residual impurities on annealing properties of vacancies in electroplated Cu studied using monoenergetic positron beams Uedono, A.; Mori, K.; Ito, K.; Imamizu, K. (+6 著者) Suzuki, R.
Japanese Journal of Applied Physics, Part 2: Letters 46: L483 (2007) Semantic Scholar
262. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high- k gate dielectrics studied using monoenergetic positron beams Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T. (+5 著者) Yamada, K.
Journal of Applied Physics 102: (2007) Semantic Scholar
263. Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams Uedono, A.; Ito, K.; Narumi, T.; Sometani, M. (+8 著者) Suzuki, R.
Journal of Applied Physics 102: (2007) Semantic Scholar
264. Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams Uedono, A.; Ito, K.; Nakamori, H.; Mori, K. (+4 著者) Suzuki, R.
Journal of Applied Physics 102: (2007) Semantic Scholar
265. Impact of high temperature annealing on traps in physical-vapor-deposited- TiN/SiO2/Si analyzed by positron annihilation Matsuki, T.; Watanabe, T.; Miura, T.; Mise, N. (+4 著者) Yamada, K.
Japanese Journal of Applied Physics, Part 2: Letters 46: L1219 (2007) Semantic Scholar
266. Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications Yukiko Shimizu; Naoya Miyashita; Yusuke Mura; Akira UedonoYoshitaka Okada
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 1: 811 (2007) Semantic Scholar
267. Role of the ionicity in defect formation in Hf-based dielectrics N. Umezawa; K. Shiraishi; S. Miyazaki; A. Uedono (+10 著者) K. Yamada
ECS Transactions 11: 199 (2007) Semantic Scholar
268. Study of high-k gate dielectrics by means of positron annihilation A. Uedono; T. Naito; T. Otsuka; K. Ito (+14 著者) K. Yamada
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 10 4: 3599 (2007) Semantic Scholar
269. Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams A. Uedono; R. Hasunuma; K. Shiraishi; K. Yamabe (+13 著者) K. Yamada
ECS Transactions 11: 81 (2007) Semantic Scholar
270. Tight distribution of dielectric characteristics of HfSiON in metal gate devices R. Hasunuma; T. Naito; C. Tamura; A. Uedono (+11 著者) K. Yamabe
ECS Transactions 11: 3 (2007) Semantic Scholar
271. Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices MIYAGAWA, Yoshihiro; MURATA, Tatsunori; NISHIDA, Yukio; NAKAI, Takehiro (+4 著者) YONEDA, Masahiro
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006: 158 (2006)
272. Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation INUMIYA, Seiji; UEDONO, Akira; MIYAZAKI, Seiichi; OHTSUKA, Shingo (+4 著者) NARA, Yasuo
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006: 394 (2006)
273. Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON UMEZAWA, N; SHIRAISHI, K; MIYAZAKI, S; UEDONO, A (+9 著者) YAMADA, K
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006: 460 (2006)
274. Defects in Electroplated Cu and their Impact on Stress Migration Reliability UEDONO, A; SUZUKI, T; NAKAMURA, T; OHDAIRA, TSUZUKI, R
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006: 1022 (2006)
275. 低速陽電子ビームを用いたhigh-kゲート絶縁膜の空隙の評価(ゲート絶縁膜,容量膜,機能膜及びメモリ技術) 上殿, 明良; 大塚, 崇; 伊東, 健一; 白石, 賢二 (+10 著者) 山田, 啓作
Technical report of IEICE. SDM 106: 25 (2006)
276. Characterization of vacancy defects in electroplated Cu films by positron annihilation and its impact on stress migration reliability T. Suzuki; T. Nakamura; Y. Mizushima; T. Kouno (+1 著者) H. Tsuchikawa
AIP Conference Proceedings 817: 198 (2006) Semantic Scholar
277. Vacancy-type defects and electronic structure of perovskite-oxide SrTiO 3 from positron annihilation A. S. Hamid; A. Uedono; T. Chikyow; K. Uwe (+1 著者) S. Kawaminami
Physica Status Solidi (A) Applications and Materials Science 203: 300 (2006) Semantic Scholar
278. An unfavorable effect of nitrogen incorporation on reduction in the oxygen vacancy formation energy in Hf-based high-k gate oxides N. Umezawa; K. Shiraishi; Y. Akasaka; S. Inumiya (+5 著者) K. Yamada
TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 31, NO 1 31: 129 (2006)
279. Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics N., Umezawa; K., Shiraishi; H., Watanabe; K., Torii (+9 著者) K., Yamada
ECS Transaction 2: 63-78 (2006)
280. 陽電子を用いた材料中の空孔型欠陥の評価上殿明良; 大塚崇; 伊東健一; 森和照 (+2 著者) 石橋章司
放射線と産業 112, 13-17 (2006). 112: 13-17 (2006)

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日