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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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281. A study of interaction of Hf and SiO2 film for high-k materials T-W., Chiu; M., Tanabe; A., Uedono; R., HasunumaK., Yamabe
Jpn. J. Appl. Phys., 45 6253-6255 (2006). 45: 6253-6255 (2006)
282. Reversible photodissociation of hexacarbonyl tungsten in cross-linked polymers Akira Watanabe; Tomoko Watanabe; Jin Shan Yue; Keitaro Tezuka (+1 著者) Akira Uedono
Bulletin of the Chemical Society of Japan 79: 1787 (2006) Semantic Scholar
283. Reversible photodissociation of hexacarbonyl tungsten in cross-linked polymers Watanabe, A.; Watanabe, T.; Yue, J.S.; Tezuka, K. (+1 著者) Uedono, A.
Bulletin of the Chemical Society of Japan 79: 1787 (2006) Semantic Scholar
284. Vacancy-type defects and electronic structure of perovskite-oxide SrTiO 3 from positron annihilation Hamid, A.S.; Uedono, A.; Chikyow, T.; Uwe, K. (+1 著者) Kawaminami, S.
Physica Status Solidi (A) Applications and Materials Science 203: 300 (2006) Semantic Scholar
285. Characterization of HfSiON gate dielectrics using monoenergetic positron beams Uedono, A.; Ikeuchi, K.; Otsuka, T.; Shiraishi, K. (+12 著者) Yamada, K.
Journal of Applied Physics 99: (2006) Semantic Scholar
286. Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams Uedono, A.; Ikeuchi, K.; Otsuka, T.; Yamabe, K. (+6 著者) Chikyow, T.
Applied Physics Letters 88: (2006) Semantic Scholar
287. Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects Chichibu, S.F.; Onuma, T.; Kubota, M.; Uedono, A. (+3 著者) Kawasaki, M.
Journal of Applied Physics 99: (2006) Semantic Scholar
288. Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams Uedono, A.; Ikeuchi, K.; Otsuka, T.; Ito, K. (+7 著者) Suzuki, R.
Applied Physics Letters 88: (2006) Semantic Scholar
289. Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams Uedono, A.; Ikeuchi, K.; Otsuka, T.; Yamabe, K. (+5 著者) Suzuki, R.
Journal of Applied Physics 100: (2006) Semantic Scholar
290. Study of interactions of Hf and SiO2 film for high-k materials Chiu, T.-W.; Tanabe, M.; Uedono, A.; Hasunuma, R.Yamabe, K.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45: 6253 (2006) Semantic Scholar
291. Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy Shimizu, Y.; Mura, Y.; Uedono, A.; Okada, Y.
Journal of Applied Physics 100: (2006) Semantic Scholar
292. Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation Uedono, A.; Naito, T.; Otsuka, T.; Shiraishi, K. (+8 著者) Yamada, K.
Journal of Applied Physics 100: (2006) Semantic Scholar
293. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Chichibu, S.F.; Uedono, A.; Onuma, T.; Haskell, B.A. (+13 著者) Sota, T.
Nature Materials 5: 810 (2006) Semantic Scholar
294. 研究紹介陽電子による先端半導体材料の評価上殿, 明良; 鈴木, 良一; 大平, 俊行
応用物理 74: 1223 (2005)
295. Identification of vacancy-type defects in ZnTe using positron annihilation spectroscopy A. S. Hamid; H. Shaban; B. A. Mansour; A. Uedono
Physica Status Solidi (A) Applications and Materials Science 202: 1914 (2005) Semantic Scholar
296. 低速陽電子ビームを用いた high-κ 膜の空隙評価上殿, 明良; 後藤, 正和; 樋口, 恵一; 池内, 恒平 (+12 著者) 大平, 俊行
Journal of the Surface Science Society of Japan 26: 268 (2005)
297. 26pYS-5 飛行時間法で測定した,固体表面からのポジトロニウム放出(X線・粒子線(陽電子),領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性)) 栗原, 俊一; 上殿, 明良; 池田, 光男; 榎本, 収志 (+12 著者) 塩谷, 亘弘
Meeting abstracts of the Physical Society of Japan 60: 926 (2005)
298. Charge trapping by oxygen-related defects in HfO(2)-based high-k gate dielectrics K Yamabe; M Goto; K Higuchi; A Uedono (+8 著者) T Arikado
2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL 648 (2005)
299. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques Chichibu, S.F.; Uedono, A.; Onuma, T.; Sota, T. (+3 著者) Nakamura, S.
Applied Physics Letters 86: (2005) Semantic Scholar
300. Vacancy-type defects in strained-Si layers deposited on SiGeSi structures probed by using monoenergetic positron beams Uedono, A.; Hattori, N.; Naruoka, H.; Ishibashi, S. (+1 著者) Ohdaira, T.
Journal of Applied Physics 97: (2005) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日