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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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301. Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams Uedono, A.; Chichibu, S.F.; Higashiwaki, M.; Matsui, T. (+1 著者) Suzuki, R.
Journal of Applied Physics 97: (2005) Semantic Scholar
302. Suppression of oxygen diffusion by thin Al 2O 3 films grown on SrTiO 3 studied using a monoenergetic positron beam Uedono, A.; Kiyohara, M.; Yasui, N.; Yamabe, K.
Journal of Applied Physics 97: (2005) Semantic Scholar
303. Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE Shimizu, Y.; Kobayashi, N.; Uedono, A.; Okada, Y.
Journal of Crystal Growth 278: 553 (2005) Semantic Scholar
304. Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO Chichibu, S.F.; Uedono, A.; Tsukazaki, A.; Onuma, T. (+6 著者) Kawasaki, M.
Semiconductor Science and Technology 20: S67 (2005) Semantic Scholar
305. Annealing properties of open volumes in HfSiO x and HfAlO x gate dielectrics studied using monoenergetic positron beams Uedono, A.; Ikeuchi, K.; Yamabe, K.; Ohdaira, T. (+5 著者) Yamada, K.
Journal of Applied Physics 98: (2005) Semantic Scholar
306. Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam Uedono, A.; Suzuki, T.; Nakamura, T.; Ohdaira, T.Suzuki, R.
Journal of Applied Physics 98: (2005) Semantic Scholar
307. Identification of vacancy-type defects in ZnTe using positron annihilation spectroscopy Hamid, A.S.; Shaban, H.; Mansour, B.A.; Uedono, A.
Physica Status Solidi (A) Applications and Materials Science 202: 1914 (2005) Semantic Scholar
308. Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE Y Shimizu; N Kobayashi; A Uedono; Y Okada
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS 184: 255 (2005)
309. Asymmetric distribution of charge trap in HfO2-based high-k gate dielectrics K. Higuchi; T. Naito; A. Uedono; K. Shiraishi (+6 著者) K. Yamabe
ECS Transactions 1: 777 (2005) Semantic Scholar
310. Reduced nonradiative defect densities in ZnO epilayers grown on Si substrates by the use of ZnS epitaxial buffer layers Onuma, T; Chichibu, SF; Uedono, A
Appl. Phys. Lett./AIP 85 (23), pp.5586-5588: (2004)
311. Material Selection for the Metal Gate/High-k Transistors AKASAKA, Y; MIYAGAWA, K; KARIYA, A; SHOJI, H (+11 著者) ARIKADO, T
Extended abstracts of the ... Conference on Solid State Devices and Materials 2004: 196 (2004)
312. Suppression of the transient current of MOS consisting of HfAlOx as gate dielectrics studied by positron annihilation A., Uedono; R., Mitsuhashi; A., Horiuchi; K., Torii (+4 著者) T., Mikado
Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Device, May 26-28 (2004) Tokyo, Japan, p. 120-123. 120-123. (2004)
313. Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam Uedono, A.; Kiyohara, M.; Shimoyama, K.; Matsunaga, Y. (+1 著者) Yamabe, K.
Materials Science Forum 445-446: 201 (2004)
314. Point defects in thin HfAIO(x) films probed by monoenergetic positron beams A Uedono; R Mitsuhashi; A Horiuchi; K Torii (+4 著者) T Mikado
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES 786: 43 (2004)
315. Direct observation of vacancy defects in electroplated Cu films T Suzuki; A Uedono; T Nakamura; Y Mizushima (+1 著者) Y Koura
PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE 87 (2004)
316. Radiative and Nonradiative Processes in Strain-Free AlxGa1-xN Films Studied by Time-Resolved Photoluminescence and Positron Annihilation Techniques T., Onuma; S; F. Chichibu; A., Uedono (+10 著者) P. DenBaars
J. Appl. Phys. 95, 2495-2504 (2004). 95: 2495-2504 (2004)
317. Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by Metalorganic vapor phase epitaxy Mutsumi Sugiyama; Taiki Nosaka; Tomonori Suzuki; Takashi Koida (+5 著者) Shigefusa F. Chichibu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43: 958 (2004) Semantic Scholar
318. Vacancy-Type Defects in Electroplated Cu Films Probed by Using a Monoenergetic Positron Beam A., Uedono; T., Suzuki; T., Nakamura
J. Appl. Phys. 95, 913-917 (2004). 95: 913-917 (2004)
319. Characterizing metal-oxide semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams Akira Uedono; Nobuyoshi Hattori; Atsushi Ogura; Jun Kudo (+3 著者) Tomohisa Mikado
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43: 1254 (2004) Semantic Scholar
320. Characterization of Photoresists for ArF-Excimer Laser Lithography Using Monoenergetic Positron Beams Uedono, A.; Ohdaira, T.; Suzuki, R.; Mikado, T. (+3 著者) Nemoto, H.
Journal of Polymer Science, Part B: Polymer Physics 42: 341 (2004) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日