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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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321. Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam Uedono, A.; Suzuki, T.; Nakamura, T.
Journal of Applied Physics 95: 913 (2004) Semantic Scholar
322. Radiative and nonradiative excitonic transitions in nonpolar (112̄0) and polar (0001̄) and (0001) Zno epilayers Koida, J.; Chichibu, S.F.; Uedono, A.; Sota, T. (+1 著者) Kawasaki, M.
Applied Physics Letters 84: 1079 (2004) Semantic Scholar
323. Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by Metalorganic vapor phase epitaxy Sugiyama, M.; Nosaka, T.; Suzuki, T.; Koida, T. (+5 著者) Chichibu, S.F.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43: 958 (2004) Semantic Scholar
324. Spin-dependent momentum density distribution and Fermi surface of Ho via 2D-ACAR measurements Hamid, A.S.; Uedono, A.
Physica Status Solidi (B) Basic Research 241: 856 (2004) Semantic Scholar
325. Radiative and nonradiative processes in strain-free AlxGa 1-xN films studied by time-resolved photoluminescence and positron annihilation techniques Onuma, T.; Chlchibu, S.F.; Uedono, A.; Sota, T. (+6 著者) DenBaars, S.P.
Journal of Applied Physics 95: 2495 (2004) Semantic Scholar
326. Characterizing metal-oxide semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams Uedono, A.; Hattori, N.; Ogura, A.; Kudo, J. (+3 著者) Mikado, T.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43: 1254 (2004) Semantic Scholar
327. Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques Koida, T.; Uedono, A.; Tsukazaki, A.; Sota, T. (+1 著者) Chichibu, S.F.
Physica Status Solidi (A) Applied Research 201: 2841 (2004) Semantic Scholar
328. Spin dependent momentum density and Fermi surface of ferromagnetic Ni obtained by positron annihilation experiments Hamid, A.S.; Uedono, A.
Physica Status Solidi (B) Basic Research 241: 2962 (2004) Semantic Scholar
329. Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z. (+3 著者) Koinuma, H.
Applied Physics Letters 85: 5586 (2004) Semantic Scholar
330. Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers Chichibu, S.F.; Sugiyama, M.; Nozaka, T.; Suzuki, T. (+5 著者) Uedono, A.
Journal of Crystal Growth 272: 481 (2004) Semantic Scholar
331. Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams Uedono, A.; Goto, M.; Higuchi, K.; Shiraishi, K. (+8 著者) Yamada, K.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43: 7848 (2004) Semantic Scholar
332. Defects in CeO2/SrTiO3 fabricated by automatic feeding epitaxy probed using positron annihilation A. Uedono; K. Shimoyama; M. Kiyohara; K. Yamabe
Journal of Applied Physics 94: 5193 (2003) Semantic Scholar
333. Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam A. Uedono; H. Bang; K. Horibe; S. MorishimaK. Akimoto
Journal of Applied Physics 93: 5181 (2003) Semantic Scholar
334. Improvement of hydrogen absorption rate of Pd by ion irradiation H. Abe; H. Uchida; Y. Azuma; A. Uedono (+1 著者) H. Itoh
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 206: 224 (2003) Semantic Scholar
335. Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams Akira Uedono; Toshiki Mori; Kunitomo Morisawa; Kouichi Murakami (+7 著者) Isao Sakaguchi
Journal of Applied Physics 93: 3228 (2003) Semantic Scholar
336. Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO T. Koida; S. F. Chichibu; A. Uedono; A. Tsukazaki (+3 著者) H. Koinuma
Applied Physics Letters 82: 532 (2003) Semantic Scholar
337. Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Ohshima, T.; Uedono, A.; Eryu, O.; Lee, K.K. (+2 著者) Nakashima, K.
Materials Science Forum 433-436: 633-636 (2003)
338. Degradation of dielectric characteristics of underlying ultrathin SiO2 films by Al adsorption in high vacuum M. Tanabe; M. Goto; A. Uedono; K. Yamabe
Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 18 (2003) Semantic Scholar
339. Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation A. Uedono; R. Mitsuhashi; A. Horiuchi; K. Torii (+4 著者) T. Mikado
Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 120 (2003) Semantic Scholar
340. Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks R. Mitsuhashi; A. Horiuchi; A. Uedono; K. Torii
Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 150 (2003) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日