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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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341. Vacancy-type defects in SOI wafers probed by a monoenergetic positron beam A., Uedono; A., Ogura; N., Hattori; J., KudoS., Nishikawa
Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, November 25-27 (2003) Kanagawa, Japan, p. 272-280. 272-280. (2003)
342. Positron annihilation study of free volume holes in polymers and polymer blends Chen, Z.Q.; Uedono, A.; Suzuki, T.; He, J.S.
Journal of Radioanalytical and Nuclear Chemistry 255: 291 (2003) Semantic Scholar
343. Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam Uedono, A.; Koida, T.; Tsukazaki, A.; Kawasaki, M. (+2 著者) Koinuma, H.
Journal of Applied Physics 93: 2481-2485 (2003) Semantic Scholar
344. Defects Introduced into SrTiO3 by Auto-Feeding-Epitaxy Studied Using Positron Annihilation Technique A., Uedono; M., Kiyohara; K., Shimoyama; K., Yamabe (+2 著者) T., Mikado
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6: 367-369 (2003)
345. Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique Uedono, A.; Kiyohara, M.; Shimoyama, K.; Yamabe, K. (+2 著者) Mikado, T.
Materials Science in Semiconductor Processing 6: 367 (2003) Semantic Scholar
346. Improvement of Hydrogen Absorption Rate of Pd by Ion Implantation H., Abe; H., Uchida; Y., Azuma; A., Uedono (+1 著者) H., Ito
Nucl. Inst. & Methods B 206, 224-227 (2003). 206: 224-227 (2003)
347. 陽電子消滅によるSrTiO3およびBaTiO3の酸素欠陥の研究 (「陽電子ビームの形成と理工学への応用」専門研究会報告書平成14年度) 上殿, 明良; 下山, 和男; 清原, 正寛
KURRI-KR 155 (2002)
348. Epitaxial growth of BaTiO 3/SrTiO 3 structures on SrTiO 3 substrate with automatic feeding of oxygen from the substrate Kazuo Shimoyama; Masahiro Kiyohara; Kousuke Kubo; Akira UedonoKikuo Yamabe
Journal of Applied Physics 92: 4625 (2002) Semantic Scholar
349. Study of oxygen vacancies in SrTiO 3 by positron annihilation Akira Uedono; Kazuo Shimayama; Masahiro Kiyohara; Zhi Quan ChenKikuo Yamabe
Journal of Applied Physics 92: 2697 (2002) Semantic Scholar
350. Positron annihilation in SiO2-Si studied by a pulsed slow positron beam R. Suzuki; T. Ohdaira; A. Uedono; Y. Kobayashi
Applied Surface Science 194: 89 (2002) Semantic Scholar
351. Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams Z. Q. Chen; Akira Uedono; Atsushi Ogura; Haruhiko Ono (+2 著者) Tomohisa Mikado
Applied Surface Science 194: 112 (2002) Semantic Scholar
352. Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams Akira Uedono; Zhi Quan Chen; Atsushi Ogura; Ryoichi Suzuki (+1 著者) Tomohisa Mikado
Journal of Applied Physics 91: 6488 (2002) Semantic Scholar
353. Vacancy-type defects in BaTiO 3/SrTiO 3 structures probed by monoenergetic positron beams Akira Uedono; Kazuo Shimoyama; Masahiro Kiyohara; Zhi Quan Chen (+3 著者) Tomohisa Mikado
Journal of Applied Physics 91: 5307 (2002) Semantic Scholar
354. Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beams A Uedono; H Yamamoto; A Nakano; A Ogura (+2 著者) T Mikado
2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS 196 (2002)
355. Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation Z.Q., Chen; A., Uedono; Y.Y., Li; J.S., He
Jpn. J. Appl. Phys. 41, 2146-2149 (2002). 41: 2146-2149 (2002) Semantic Scholar
356. Defects-induced volume deviations in ZnSe H. Ebe; F. Sakurai; Z. Q. Chen; A. Uedono (+3 著者) Jun-ichi Nishizawa
Journal of Crystal Growth 237-239: 1566 (2002) Semantic Scholar
357. Homeoepitaxial growth of SrTiO3 in an ultrahigh vacuum with automatic feeding of oxygen from the substrate at temperatures as low as 370oC K., Shimoyama; M., Kiyohara; A., Uedono; K., Yamabe
Jpn. J. Appl. Phys. 41, L269-L271 (2002). 41: L269-L271 (2002) Semantic Scholar
358. Annealing of a vacancy-type defect and diffusion of implanted boron in 6H-SiC T Ohshima; A Uedono; O Eryu; KK Lee (+2 著者) K Nakashima
SILICON CARBIDE AND RELATED MATERIALS - 2002 433-4: 633 (2002)
359. Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams Akira Uedono; Zhi Quan Chen; Atsushi Ogura; Haruhiko Ono (+2 著者) Tomohisa Mikado
Journal of Applied Physics 90: 6026 (2001) Semantic Scholar
360. Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions Takeshi Ohshima; Akira Uedono; Hiroshi Abe; Z. Q. Chen (+4 著者) Kenshiro Nakashima
Physica B: Condensed Matter 308-310: 652 (2001) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日