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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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361. Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams Akira Uedono; Zhi Quan Chen; Ryoichi Suzuki; Toshiyuki Ohdaira (+3 著者) Shin-Ichi Kimura
Journal of Applied Physics 90: 2498 (2001) Semantic Scholar
362. Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy Tetsuji Ueno; Toshifumi Irisawa; Yasuhiro Shiraki; Akira Uedono (+3 著者) Tomohisa Mikado
Journal of Crystal Growth 227-228: 761 (2001) Semantic Scholar
363. Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams A. Uedono; S. F. Chichibu; Z. Q. Chen; M. Sumiya (+4 著者) S. Nakamura
Journal of Applied Physics 90: 181 (2001) Semantic Scholar
364. Open spaces and molecular motions in carbon-black- and silica-loaded SBR investigated using positron annihilation A. Uedono; S. Fukui; M. Muramatsu; T. Ubukata (+1 著者) S. Tanigawa
Journal of Polymer Science, Part B: Polymer Physics 39: 835 (2001) Semantic Scholar
365. A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams Akira Uedono; Makoto Muramatsu; Tomohiro Ubukata; Masahito Watanabe (+4 著者) Seiichi Takasu
Journal of Applied Physics 89: 3606 (2001) Semantic Scholar
366. 27pYC-9 低速陽電子によるSi基板の炭化により導入された空孔型欠陥の研究上殿, 明良; 村松, 誠; 生形, 友宏; 渡辺, 匡人 (+4 著者) 高須, 誠一
Meeting abstracts of the Physical Society of Japan 56: 845 (2001)
367. Impact of the growth polar direction on the optical properties of GaN films grown by metalorganic vapor phase epitaxy Setoguchi, A.; Yoshimura, K.; Sumiya, M.; Uedono, A.Chichibu, S.F.
Materials Research Society Symposium - Proceedings 639: 28 (2001)
368. Temperature and irradiation effects on positronium formation in polycarbonate ZQ Chen; T Suzuki; A Uedono; S TanigawaY Ito
POSITRON ANNIHILATION - ICPA-12 363-3: 297 (2001)
369. Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature A Uedono; M Watanabe; T Ichihashi; S Takasu (+4 著者) S Tanigawa
POSITRON ANNIHILATION - ICPA-12 363-3: 472 (2001)
370. Positron annihilation studies of defects in ion implanted palladium H Abe; A Uedono; H Uchida; A Komatsu (+1 著者) H Itoh
POSITRON ANNIHILATION - ICPA-12 363-3: 156 (2001)
371. Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy Chichibu, S.F.; Setoguchi, A.; Uedono, A.; Yoshimura, K.Sumiya, M.
Applied Physics Letters 78: (2001) Semantic Scholar
372. Impact of the growth polar direction on the optical properties of GaN films grown by metalorganic vapor phase epitaxy A. Setoguchi; K. Yoshimura; M. Sumiya; A. UedonoS. F. Chichibu
Materials Research Society Symposium - Proceedings 639: G11.6.6 (2001)
373. Positron annihilation studies of defects in ion implanted palladium Abe, H.; Uedono, A.; Uchida, H.; Komatsu, A. (+1 著者) Itoh, H.
Materials Science Forum 363-365: 156-158 (2001)
374. Temperature and irradiation effects on positronium formation in polycarbonate Chen, Z.Q.; Suzuki, T.; Uedono, A.; Tanigawa, S.Ito, Y.
Materials Science Forum 363-365: 297-299 (2001)
375. Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature Uedono, A.; Watanabe, M.; Ichihashi, T.; Takasu, S. (+4 著者) Tanigawa, S.
Materials Science Forum 363-365: 472-474 (2001)
376. Evaluation of SOI substrates by positron annihilation Uedono, A.; Ogura, A.; Tanigawa, S.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40: 2903-2906 (2001)
377. Free volume in polycarbonate studied by positron annihilation: Effects of free radicals and trapped electrons on positronium formation Chen, Z.Q.; Suzuki, T.; Kondo, K.; Uedono, A.Ito, Y.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40: 5036-5040 (2001)
378. 低速陽電子によるP注入SiCの欠陥検出と焼鈍特性の研究 (「陽電子ビームの形成と理工学への応用」専門研究会報告書平成12年度) 上殿, 明良; 谷川, 庄一郎; 大島, 武
KURRI-KR 113 (2000)
379. 23pYH-9 陽電子消滅を用いたダイヤモンドの格子欠陥の荷電状態の分析生形, 友宏; 上殿, 明良; 森下, 憲雄; 伊藤, 久義 (+2 著者) 谷川, 庄一郎
Meeting abstracts of the Physical Society of Japan 55: 837 (2000)
380. 25pYP-4 As^+イオン注入によりSi基板中に導入された反跳酸素と空孔型欠陥の検出村松, 誠; 上殿, 明良; 生形, 友宏; 谷野, 浩敏 (+4 著者) 谷川, 庄一郎
Meeting abstracts of the Physical Society of Japan 55: 858 (2000)

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日