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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

381. Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility Tetsuji Ueno; Toshifumi Irisawa; Yasuhiro Shiraki; Akira UedonoShoichiro Tanigawa
Thin Solid Films 369: 320 (2000) Semantic Scholar
382. SiC/Si界面のボイド欠陥発生の陽電子消滅法による観察 : エピタキシャル成長IV 渡辺, 匡人; 市橋, 鋭也; 上殿, 明良; 谷川, 庄一郎
Journal of the Japanese Association of Crystal Growth 27: 46 (2000)
383. Positron annihilation in silicon in thermal equilibrium at high temperature A. Uedono; M. Watanabe; S. Takasu; T. SabatoS. Tanigawa
Journal of Physics Condensed Matter 12: 719 (2000) Semantic Scholar
384. Relationship Between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions T., Ohshima; A., Uedono; H., Itoh; M., Yoshikawa (+6 著者) G., Pensl
Materials Science Forum 338/342: 857-860 (2000)
385. Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams Uedono, A.; Suzuki, R.; Ohdaira, T.; Mikado, T. (+3 著者) Uozumi, T.
Journal of Polymer Science, Part B: Polymer Physics 38: 101 (2000) Semantic Scholar
386. Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams Akira Uedono; Shoichiro Tanigawa; Atsushi Ogura; Haruhiko Ono (+2 著者) Tomohisa Mikado
Journal of Applied Physics 87: 1659 (2000) Semantic Scholar
387. Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams Akira Uedono; Shoichiro Tanigawa; Takeshi Ohshima; Hisayoshi Itoh (+6 著者) Tomohisa Mikado
Journal of Applied Physics 87: 4119 (2000) Semantic Scholar
388. Oxygen-related defects introduced by As⁺-implantation through cap layers in Si probed by monoenergetic positron beams Uedono, A.; Muramatsu, M.; Ubukata, T.; Tanino, H. (+5 著者) Mikado, T.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39: 6126 (2000)
389. Relationship between donor activation and defect annealing in 6H-SiC hot-implanted with phosphorus ions T Ohshima; A Uedono; H Itoh; M Yoshikawa (+6 著者) G Pensl
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 338-3: 857 (2000)
390. 陽電子寿命 - ドップラー拡がり相関測定によるポジトロニウムと分子の反応の解析上殿, 明良; 鈴木, 良一; 谷川, 庄一郎
Radioisotopes 41: 611 (1999)
391. Defects in p+-gate metal-oxide-semiconductor structures probed by monoenergetic positron beams Akira Uedono; Masako Hiketa; Shoichiro Tanigawa; Tomohisa Kitano (+4 著者) Tomohisa Mikado
Journal of Applied Physics 86: 5385 (1999) Semantic Scholar
392. Oxygen-related defects in O+-implanted 6H-SiC studied by a monoenergetic positron beam Akira Uedono; Shoichiro Tanigawa; Takeshi Ohshima; Hisayoshi Itoh (+2 著者) Isamu Nashiyama
Journal of Applied Physics 86: 5392 (1999) Semantic Scholar
393. Open spaces and molecular motions of acrylic epoxy-based network polymers probed by positron annihilation A. Uedono; W. Aiko; T. Yamamoto; T. NakamichiS. Tanigawa
Journal of Polymer Science, Part B: Polymer Physics 37: 2875 (1999) Semantic Scholar
394. Annealing behaviours of defects in electron-irradiated diamond probed by positron annihilation A. Uedono; K. Mori; N. Morishita; H. Itoh (+2 著者) S. Shikata
Journal of Physics Condensed Matter 11: 4925 (1999) Semantic Scholar
395. Defects in synthesized and natural diamond probed by positron annihilation A. Uedono; S. Fujii; N. Morishita; H. Itoh (+1 著者) S. Shikata
Journal of Physics Condensed Matter 11: 4109 (1999) Semantic Scholar
396. イオン注入及び注入後熱処理した３C-SiC中の残留欠陥の研究大島武; 伊藤久義; 上殿明良; 鈴木良一 (+10 著者) 岡田漱平
電子技術総合研究所彙報 62, 31-38 (1999). 62,: 31-38 (1999)
397. イオン注入及び注入後熱処理した3C-SiC中の残留欠陥の研究 (特集:耐熱・耐放射線半導体素子材料技術) 大島, 武; 伊藤, 久義; 上殿, 明良
Bulletin of the Electrotechnical Laboratory 62: 469 (1998)
398. 対向型陽電子消滅γ線ドップラー拡がり測定装置の製作森, 和照; 上殿, 明良; 谷川, 庄一郎; 中居, 克彦
Radioisotopes 47: 623 (1998) Semantic Scholar
399. Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation T Ohshima; A Uedono; H Itoh; K Abe (+8 著者) Nashiyama, I
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 264-2: 745 (1998)
400. Study of residual defects in ion-implanted and subsequently annealed 3C-SiC Ohshima, T.; Ishida, Y.; Ohdaira, T.; Itoh, H. (+10 著者) Okada, S.
Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory 62: (1998)

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日