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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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481. SiO2 films deposited on Si substrates studied by monoenergetic positron beams Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R. (+2 著者) Fujino, K.
Journal of Applied Physics 75: 216 (1994) Semantic Scholar
482. Positron annihilation in proton irradiated czochralski-grown si Uedono, A.; Cho, Y.-K.; Tanigawa, S.
Japanese Journal of Applied Physics 33: 1 (1994) Semantic Scholar
483. Vacancy-type defects in be-implanted inp Wei, L.; Tanigawa, S.; Uedono, A.; Wada, K.Nakanishi, H.
Japanese Journal of Applied Physics 33: 33 (1994) Semantic Scholar
484. Oxygen clusters in quenched czochralski-si studied by infrared spectroscopy and positron annihilation Atsushi Ikari; Hiroyo Haga; Akira Uedono; Yusuke UjihiraOsamu Yoda
Japanese Journal of Applied Physics 33: 1723 (1994) Semantic Scholar
485. Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams A. Uedono; L. Wei; S. Tanigawa; R. Suzuki (+3 著者) Y. Ohji
Journal of Applied Physics 75: 3822 (1994) Semantic Scholar
486. Defects in S i O2/S i structures probed by using a monoenergetic positron beam Akira Uedono; Long Wei; Shoichiro Tanigawa Ohji; Yuzuru Ohji
Japanese Journal of Applied Physics 33: 3330 (1994) Semantic Scholar
487. 陽電子消滅による電子線照射石英ガラスの欠陥の検出綿打敏司; 上殿明良; 依田修; 氏平祐輔
日本化学会会誌 505-511 (1994). 505-511 (1994)
488. Defects in electron irradiated vitreous SiO2 probed by positron annihilation A. Uedono; T. Kawano; S. Tanigawa; H. Itoh
Journal of Physics: Condensed Matter 6: 8669 (1994) Semantic Scholar
489. Defects in czochralski-grown silicon crystals investigated by positron annihilation Atsushi Ikari; Kazuto Kawakami; Hiroyo Haga; Akira Uedono (+2 著者) Shoichiro Tanigawa
Japanese Journal of Applied Physics 33: 558 (1994) Semantic Scholar
490. Application of positron age-momentum correlation measurement to the study of defects in electron irradiated synthetic silica glass S. Watauchi; A. Uedono; Y. Ujihira; O. Yoda
Journal of Applied Physics 76: 4553 (1994) Semantic Scholar
491. Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams Akira Uedono; Shoichiro Tanigawa; Ryoichi Suzuki; Hideaki OhgakiTomohisa Mikado
Japanese Journal of Applied Physics 33: 628 (1994) Semantic Scholar
492. Oxygen microclusters in czochralski-grown si probed by positron annihilation Akira Uedono; Takao Kawano; Long Wei; Shoichiro Tanigawa (+2 著者) Hisayoshi Itoh
Japanese Journal of Applied Physics 33: L1131 (1994) Semantic Scholar
493. Defects introduced by ar plasma exposure in gaas probed by monoenergetic positron beam Akira Uedono; Takao Kawano; Shoichiro Tanigawa; Kazumi WadaHideo Nakanishi
Japanese Journal of Applied Physics 33: 1374 (1994) Semantic Scholar
494. Positron annihilation in electron irradiated Cz-Si A. Uedono; Y. Ujihira; A. Ikari; H. HagaO. Yoda
Hyperfine Interactions 79: 615 (1993) Semantic Scholar
495. The study of native defects in as-grown GaAs by positron annihilation S. Fujii; A. Uedono; S. Tanigawa
Hyperfine Interactions 79: 719 (1993) Semantic Scholar
496. Defects in separation by implanted oxygen wafer probed by monoenergetic positron beams A. Uedono; S. Watauchi; Y. Ujihira; L. Wei (+7 著者) M. Koumaru
Hyperfine Interactions 79: 621 (1993) Semantic Scholar
497. FORMATION OF OXYGEN CLUSTERS IN QUENCHED CZ-SI AND MCZ-SI CRYSTALS A IKARI; H HAGA; O YODA; A UEDONOY UJIHIRA
SHALLOW IMPURITIES IN SEMICONDUCTORS 117: 225 (1993)
498. Nucleation of oxygen precipitates in Czochralski single-crystal grown silicon quenched from high temperature Ikari, Atsushi; Yoda, Osamu; Ujihira, Yusuke; Haga, HiroyoUedono, Akira
Nippon Steel Technical Report (1993)
499. Study of point defects in bulk znse grown by nonstoichiometric annealing Kazutaka Terashima; Eiji Tokizaki; Akira Uedono; Shoichiro Tanigawa
Japanese Journal of Applied Physics 32: 736 (1993) Semantic Scholar
500. Vacancies and Interstitial Clusters in As-Grown GaAs Probed by Positron Annihilation A., Uedono; S., Fujii; L., Wei; S., Tanigawa
Inst. Phys. Conf. Ser. 129, Chapter 6, p. 513-518 (1993). 513-518 (1993)

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日