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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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521. The Effect of Point Defects Introduced by Proton Irradiation on Positron Annihilation in Si Y; K. Cho; H., Kondo; T., Kubota (+4 著者) S., Tanigawa
Materials Science Forum 105/110: 925-928 (1992)
522. Oxygen Microclusters in Quenched Si Studied by Positron Annihilation A., Uedono; Y., Ujihira; A., Ikari; H., HagaO., Yoda
Materials Science Forum 105/110: 1301-1304 (1992)
523. Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions A., Uedono; L., Wei; C., Dosho; Y., Tabuki (+2 著者) M., Tamura
Materials Science Forum 105/110: 1471-1474 (1992)
524. A Diffusion of Positrons by an Electric Field in MOS Transistors A., Uedono; L., Wei; Y., Tabuki; H., Kondo (+1 著者) Y., Ohji
Materials Science Forum 105/110: 1475-1478 (1992)
525. Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam A., Uedono; L., Wei; Y., Tabuki; H., Kondo (+2 著者) M., Ogasawara
Materials Science Forum 105/110: 1479-1482 (1992)
526. Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation A., Uedono; L., Wei; Y., Tabuki; H., Kondo (+2 著者) H., Nakanishi
Materials Science Forum 105/110: 1483-1486 (1992)
527. Variation of Free Volumes in Polyvinyl Alcohol Studied by Positron Annihilation Y., Suda; A., Uedono; Y., Ujihira
Materials Science Forum 105/110: 1721-1724 (1992)
528. Increase of I4 at Melting Point Found in Polyethylene and Serious Thermal Hysteresis Found in Polypropylene M., Tanaka; K., Takebe; A., Uedono; Y., Ujihira (+1 著者) T., Asanuma
Materials Science Forum 105/110: 1737-1740 (1992)
529. Free Volumes in Amine-Cured Epoxy Studied by Positron Annihilation E., Ueda; A., Uedono; Y., Ujihira; S., Yamashita (+1 著者) K., Horie
Materials Science Forum 105/110: 1745-1748 (1992)
530. Free-Volumes in Polypropylene Probed by Positron Annihilation A., Uedono; Y., Ohko; S., Watauchi; Y., Ujihira
Proc. of Int. Symp. on Material Chemistry in Nuclear Environment (Tsukuba, 1992, Japan) p. 479-487. 479-487 (1992)
531. NUCLEATION OF OXYGEN PRECIPITATES IN A QUENCHED CZOCHRALSKI SILICON CRYSTAL A IKARI; H HAGA; O YODA; A UEDONOY UJIHIRA
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 69 (1992)
532. POINT-DEFECT ASSISTED CRYSTAL-GROWTH OF BULK ZNSE K TERASHIMA; E TOKIZAKI; H KONDO; S TANIGAWA (+2 著者) Y UJIHIRA
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 111 (1992)
533. EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITRON BEAM AND A PULSED POSITRON BEAM H KAMETANI; H AKIYAMA; Y YAMAGUCHI; M KOUMARU (+8 著者) T MIKADO
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 235 (1992)
534. CHARACTERIZATION OF DEFECTS IN HEAVILY SI-DOPED GAAS BY A MONOENERGETIC POSITRON BEAM A UEDONO; Y UJIHIRA; L WEI; S TANIGAWA
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 277 (1992)
535. CHARACTERIZATION OF METAL-OXIDE-SILICON INTERFACE BY MONOENERGETIC POSITRON BEAM Y OHJI; A UEDONO; L WEI; Y TABUKIS TANIGAWA
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 313 (1992)
536. DEFECTS INTRODUCED BY LOW-DOSE BE-IMPLANTATION PROBED BY A MONOENERGETIC POSITRON BEAM A UEDONO; Y UJIHIRA; L WEI; Y TABUKI (+2 著者) H NAKANISHI
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 325 (1992)
537. B+, P+, AS+ AND SI+ ION-IMPLANTATION INDUCED DEFECTS IN SILICON STUDIED BY A VARIABLE-ENERGY POSITRON BEAM J SUGIURA; M OGASAWARA; A UEDONO; L WEIS TANIGAWA
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 1055 (1992)
538. DEFECT FORMATION BY ION-IMPLANTATION IN CZ-SI STUDIED BY A MONOENERGETIC POSITRON BEAM A UEDONO; Y UJIHIRA; L WEI; Y TABUKI (+3 著者) M TAMURA
DEFECT ENGINEERING IN SEMICONDUCTOR GROWTH, PROCESSING AND DEVICE TECHNOLOGY 262: 1061 (1992)
539. THE DEPTH PROFILES OF ION-IMPLANTATION INDUCED VACANCY-TYPE DEFECTS PROBED BY A MONOENERGETIC POSITRON BEAM A UEDONO; L WEJ; S TANIGAWA; J SUGIURA (+1 著者) M TAMURA
RADIATION EFFECTS AND DEFECTS IN SOLIDS 124: 31 (1992)
540. Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography Masaru Tachibana; Shigeki Motomura; Akira Uedono; Kenichi KojimaQi Tang
Japanese Journal of Applied Physics 31: 2202 (1992) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日