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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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541. Characterization of Diamond Films by Means of a Pulsed Positron Beam Ryoichi Suzuki; Tomohisa Mikado; Hideaki Ohgaki; Mitsukuni Chiwaki (+4 著者) Hiroyuki Funamoto
Japanese Journal of Applied Physics 31: 2237 (1992) Semantic Scholar
542. 陽電子寿命-ドップラー拡がり相関測定によるポジトロニウムと分子の反応の解析上殿明良; 鈴木良一; 谷川庄一郎
Radioisotopes 41, 611-617 (1992). 41: 611-617 (1992) Semantic Scholar
543. 24p-T-3 薄膜の欠陥評価への低速陽電子線の応用上殿, 明良; 谷川, 庄一郎
春の分科会講演予稿集 1991: 35 (1991)
544. Vacancy-Type Defects and Their Annealing Processes in Ion-Implanted Si Studied by a Variable-Energy Positron Beam A., Uedono; L., Wei; S., Tanigawa; J., SugiuraM., Ogasawara
Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) p. 73-78. 73-78. (1991)
545. Defect production in phosphorus ion-implanted si02(43 nm)/si studied by a variable-energy positron beam Akira Uedono; Long Wei; Chisei Dosho; Hitoshi Kondo (+2 著者) Makoto Ogasawara
Japanese Journal of Applied Physics 30: 201 (1991) Semantic Scholar
546. Release processes of He implanted in Cu and Ni studied by a monoenergetic positron beam A. Uedono; S. Tanigawa; H. Sakairi
Journal of Nuclear Materials 184: 191 (1991) Semantic Scholar
547. Defects introduced by mev-energy ion implantation into si probed by a monoenergetic positron beam Akira Uedono; Long Wei; Chisei Dosho; Hitoshi Kondo (+1 著者) Masao Tamura
Japanese Journal of Applied Physics 30: 1597 (1991) Semantic Scholar
548. Effects of the fermi level on defects in be+-implanted gaas studied by a monoenergetic positron beam Akira Uedono; Long Wei; Yasushi Tabuki; Hitoshi Kondo (+2 著者) Hideo Nakanish I
Japanese Journal of Applied Physics 30: L2002 (1991) Semantic Scholar
549. 陽電子消滅法による材料表面の解析上殿明良; 谷川庄一郎
表面科学 11, 598-603 (1990). 11: 598-603 (1990) Semantic Scholar
550. Depth Profiles of Vacancy-Type Defects in Ion-Implanted Si Studied by Monoenergetic Positron Beam A., Uedono; S., Tanigawa; J., Sugiura; M., Ogasawara
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 495-500. 495-500. (1990)
551. Photoplastic Effect and Characteristics of Dislocations in Organic Semiconductors K., Kojima; A., Uedono
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 1673-1678. 1673-1678. (1990)
552. Characterization of diamond films synthesized on si from a gas phase in microwave plasma by slow positrons Akira Uedono; Shoichiro Tanigawa; Hiroyuki Funamoto; Akira NishikawaKouji Takahashi
Japanese Journal of Applied Physics 29: 555 (1990) Semantic Scholar
553. Defects induced by wafer processing and thermal treatment in inp probed with monoenergetic positrons Akira Uedono; Shoichiro Tanigawa
Japanese Journal of Applied Physics 29: 909 (1990) Semantic Scholar
554. Vacancy-type defects in Si+ -implanted GaAs and its effects on electrical activation by rapid thermal annealing Jong-Lam Lee; Akira Uedono; Shoichro Tanigawa; Jeong Yong Lee
Journal of Applied Physics 67: 6153 (1990) Semantic Scholar
555. Study of near surface defects in He-implanted stainless steels by monoenergetic positron beam A. Uedono; S. Tanigawa; H. Sakairi
Journal of Nuclear Materials 173: 307 (1990) Semantic Scholar
556. Vacancy-Type defects in as+-implanted SiO2(43 nm)/Si proved with slow positrons Akira Uedono; Shoichiro Tanigawa; Jun Sugiura; Makoto Ogasawara
Japanese Journal of Applied Physics 29: 1867 (1990) Semantic Scholar
557. Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs Akira Uedono; Shoichiro Tanigawa
Japanese Journal of Applied Physics 29: L346 (1990) Semantic Scholar
558. 表面・界面プローブとしての低速陽電子上殿明良; 谷川庄一郎
表面技術 41, 355-360 (1990). 41: 355-360 (1990) Semantic Scholar
559. 表面・界面プローブとしての低速陽電子上殿, 明良; 谷川, 庄一郎
Journal of the Surface Finishing Society of Japan 41: 355 (1990) Semantic Scholar
560. A study of vacancy-type defects in b+-implanted sio2/si by a slow positron beam Akira Uedono; Shoichiro Tanigawa; Jun Sugiura; Makoto Ogasawara
Japanese Journal of Applied Physics 28: 1293 (1989) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日