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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

41. Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy L. Y. Li; K. Shima; M. Yamanaka; K. Kojima (+5 著者) S. F. Chichibu
Applied Physics Letters 119: 091105 (2021) Semantic Scholar
42. Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors Shigefusa F. Chichibu; Kohei Shima; Kazunobu Kojima; Shoji IshibashiAkira Uedono
2021 20th International Workshop on Junction Technology (IWJT) (2021) Semantic Scholar
43. Thermal Insulating Property of Silsesquioxane Hybrid Film Induced by Intramolecular Void Spaces Hamada, T.; Nakanishi, Y.; Okada, K.; Tsukada, S. (+1 著者) Ohshita, J.
ACS Applied Polymer Materials 3: (2021) Semantic Scholar
44. Effect of Ag doping on crystallinity and microstrain of LaMnO3 nanoparticles: Confirmations of defect levels with positron lifetime and Doppler-broadening calculations Muhammed Shafi, P.; Kurian, E.; Joseph, N.; Sellaiyan, S. (+1 著者) Chandra Bose, A.
Physica B: Condensed Matter 615: (2021) Semantic Scholar
45. Interfacial Conductivity Enhancement and Pore Confinement Conductivity-Lowering Behavior inside the Nanopores of Solid Silica-gel Nanocomposite Electrolytes Sagara, A.; Yabe, H.; Chen, X.; Put, B. (+5 著者) Vereecken, P.M.
ACS Applied Materials and Interfaces 13: (2021) Semantic Scholar
46. Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam Akazawa, Masamichi; Kamoshida, Ryo; Murai, Shunta; Kachi, TetsuUedono, Akira
JAPANESE JOURNAL OF APPLIED PHYSICS 60: 016502 (2021) Semantic Scholar
47. Dynamic Observation and Theoretical Analysis of Initial O-2 Molecule Adsorption on Polar and m-Plane Surfaces of GaN Sumiya, Masatomo; Sumita, Masato; Asai, Yuya; Tamura, Ryo (+1 著者) Yoshigoe, Akitaka
JOURNAL OF PHYSICAL CHEMISTRY C 124: 25282 (2020) Semantic Scholar
48. Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam Uedono, Akira; Sakurai, Hideki; Narita, Tetsuo; Sierakowski, Kacper (+5 著者) Kachi, Tetsu
SCIENTIFIC REPORTS 10: (2020) Semantic Scholar
49. Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer Inoue, Fumihiro; Podpod, Arnita; Peng, Lan; Phommahaxay, Alain (+2 著者) Beyne, Eric
JOURNAL OF MANUFACTURING PROCESSES 58: 811 (2020) Semantic Scholar
50. Growth of high-quality GaN by halogen-free vapor phase epitaxy Kimura, T.; Kataoka, K.; Uedono, A.; Amano, H.Nakamura, D.
Applied Physics Express 13: (2020) Semantic Scholar
51. Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams Uedono, A.; Shojiki, K.; Uesugi, K.; Chichibu, S.F. (+4 著者) Miyake, H.
Journal of Applied Physics 128: (2020) Semantic Scholar
52. Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO S. F. Chichibu; A. Uedono; K. Kojima; K. Koike (+2 著者) S. Ishibashi
Journal of Applied Physics 127: 1 (2020) Semantic Scholar
53. Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams Akira Uedono; Wataru Ueno; Takahiro Yamada; Takuji Hosoi (+4 著者) Heiji Watanabe
Journal of Applied Physics 127: 054503 (2020) Semantic Scholar
54. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Akira Uedono; Marcel Dickmann; Werner Egger; Christoph Hugenschmidt (+1 著者) Shigefusa F. Chichibu
Proceedings of SPIE 11280: 11280C-1 (2020)
55. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Shigefusa F. Chichibu; Kohei Shima; Kazunobu Kojima; Shoji IshibashiAkira Uedono
Proceeding of SPIE 11280: 112800B-1 (2020) Semantic Scholar
56. Free volume in epoxy resins for CFRP studied by means of positron annihilation Uedono, A.
Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering 86: (2020) Semantic Scholar
57. Effect of free-volume holes on static mechanical properties of epoxy resins studied by positron annihilation and PVT experiments Zhang, H.J.; Sellaiyan, S.; Sako, K.; Uedono, A. (+1 著者) Hayashi, K.
Polymer 190: (2020) Semantic Scholar
58. Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy Sagara, A.; Yabe, H.; Chen, X.; Vereecken, P.M.Uedono, A.
Microporous and Mesoporous Materials 295: (2020) Semantic Scholar
59. Calculation of positron states and annihilation parameters in gamma and amorphous Al2O3 Ishibashi, S.; Uedono, A.
Acta Physica Polonica A 137: (2020) Semantic Scholar
60. Annealing behaviours of open spaces in thin Al2O3 films deposited on semiconductors studied using monoenergetic positron beams Uedono, A.; Egger, W.; Koschine, T.; Hugenschmidt, C. (+1 著者) Ishibashi, S.
Acta Physica Polonica A 137: (2020) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日