ホーム > 上殿 明良/ Uedono, Akira

上殿 明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

IWJT best paper

2025-06-06

上殿 明良
ISSM best paper

2024-12-10

上殿 明良 蓮沼 隆 重田 育照
ISSM Best Paper 数理物質系　上殿 明良、蓮沼 隆、計算科学研究センター　重田 育照

2022-12-13

上殿 明良 重田 育照 蓮沼 隆
応用物理学会優秀論文賞 数理物質系/エネルギー物質科学研究センター　上殿 明良

2021-07-05

上殿 明良
加速器・放射線を利用した豊かな未来社会の形成に向けて
高度制御量子ビームリサーチユニット
Toward the Formation of a Productive Future Society Utilizing Accelerators and Radiation

2015-03-16

笹 公和 上殿 明良 関場 大一郎 黒澤 正紀 小沢 顕 冨田 成夫 末木 啓介
  1. 1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
    IOP PUBLISHING LTD 2011年1月
  2. 2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
    SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
  3. 3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
    IEEE 2009年1月 (ISBN: 9781424444915)
  4. 4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
    WILEY-V C H VERLAG GMBH 2007年1月
  5. 5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
    IEEE 2006年1月 (ISBN: 1424400163)
  6. 6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
    IOP PUBLISHING LTD 2005年1月
  7. 7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
    MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
  8. 8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
    TRANS TECH PUBLICATIONS LTD 2004年1月
  1. 1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
    The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
  2. 2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
    Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
  3. 3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
    Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
  4. 4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
    15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
  5. 5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
    15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
  6. 6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
    19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
  7. 7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
    6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
  8. 8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
    Compound Semiconductor Week (CSW) Conference 2019年5月19日
  9. 9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
    International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
  10. 10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
    2018年第79応用物理学会 秋季学術講演会 2018年9月18日
  11. 11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
    19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
  12. 12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
    International Thin Films Conference (TACT) 2017年10月15日
  13. 13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
    23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
  14. 14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
    International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
  15. 15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
    29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
  16. 16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
    29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
  17. 17. 筑波大学タンデム加速器施設UTTACの現状（2016年度） 森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場 大一郎; 笹 公和; 上殿 明良
    第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
  18. 18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
    12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
  19. 19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
    Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
  20. 20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
    Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
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