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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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61. Magnetic properties of metastable bcc phase in Fe64Ni36 alloy synthesized through polyol process Jacob, G.A.; Sellaiyan, S.; Uedono, A.; Joseyphus, R.J.
Applied Physics A: Materials Science and Processing 126: (2020) Semantic Scholar
62. Effect of Free-Volume Hole Fraction on Dynamic Mechanical Properties of Epoxy Resins Investigated by Pressure-Volume-Temperature Technique Zhang, H.J.; Sellaiyan, S.; Sako, K.; Uedono, A. (+1 著者) Hayashi, K.
Journal of Physical Chemistry B 124: (2020) Semantic Scholar
63. Effect of free-volume holes on static mechanical properties of epoxy resins studied by positron annihilation and PVT experiments Zhang, H.J.; Sellaiyan, S.; Sako, K.; Uedono, A. (+1 著者) Hayashi, K.
Polymer 190: (2020) Semantic Scholar
64. Free volume in epoxy resins for CFRP studied by means of positron annihilation Uedono, A.
Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering 86: (2020) Semantic Scholar
65. Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy Sagara, A.; Yabe, H.; Chen, X.; Vereecken, P.M.Uedono, A.
Microporous and Mesoporous Materials 295: (2020) Semantic Scholar
66. Effect of illumination on positron states in wide bandgap semiconductors Akira Uedono; Werner Egger; Christoph Hugenschmidt; Shoji Ishibashi
AIP Conference Proceedings 2182: (2019) Semantic Scholar
67. (Invited) A Novel Optical Characterization of a-Si:H/c-Si Interface Microstructures Based on Data of Positron Annihilation Spectroscopy Nobuyuki Matsuki; Takuya Matsui; Koji Michishio; Brian O' Rourke (+1 著者) Akira Uedono
ECS Meeting Abstracts {MA}2019-02: 1783 (2019) Semantic Scholar
68. Accelerator operation 2018 K., Sasa; S., Ishii; Y., Tajima; T., Takahashi (+3 著者) A., Uedono
University of Tsukuba Tandem Accelerator Complex (UTTAC) Annual report 2018 UTTAC-88: 1 (2019)
69. In-plane optical polarization and dynamic properties of the near-band-edge emission of an m -plane freestanding AlN substrate and a homoepitaxial film Chichibu, S.F.; Kojima, K.; Hazu, K.; Ishikawa, Y. (+4 著者) Uedono, A.
Applied Physics Letters 115: 151903-1 (2019) Semantic Scholar
70. 筑波大学タンデム加速器施設の現状報告笹公和; 石井聡; 髙橋努; 大和良広 (+3 著者) 上殿明良
Proceedings of the 16th Annual Meeting of Particle Accelerator Society of Japan (PASJ2019) 1198 - 1120 (2019)
71. 筑波大学タンデム加速器施設の現状報告笹公和; 石井聡; 髙橋努; 大和良広 (+3 著者) 上殿明良
Proceedings of the 16th Annual Meeting of Particle Accelerator Society of Japan (PASJ2019) 1198 (2019)
72. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Kohei Shima; Kazunobu Kojima; Akira Uedono; Shigefusa F. Chichibu
Proceedings of IWJT2019 (2019)
73. Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN Kazuya Yuge; Toshihide Nabatame; Yoshihiro Irokawa; Akihiko Ohi (+4 著者) Tomoji Ohishi
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 368 (2019) Semantic Scholar
74. A novel optical characterization of a-Si:H/c-Si interface microstructures based on data of positron annihilation spectroscopy Nobuyuki Matsuki; Takuya Matsui; Koji Michishio; Brian E. O'Rourke (+1 著者) Akira Uedono
ECS Transactions 92: 21 (2019) Semantic Scholar
75. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Fumihiro Inoue; Lan Peng; Serena Iacovo; Fuya Nagano (+3 著者) Eric Beyne
PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 15 (2019)
76. Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys Ishibashi, S.; Uedono, A.; Kino, H.; Miyake, T.Terakura, K.
Journal of Physics Condensed Matter 31: (2019) Semantic Scholar
77. Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique Irokawa, Y.; Nabatame, T.; Yuge, K.; Uedono, A. (+2 著者) Koide, Y.
AIP Advances 9: (2019) Semantic Scholar
78. Impact of defects on the electrical properties of p-n diodes formed by implanting Mg and H ions into N-polar GaN Iguchi, H.; Narita, T.; Kataoka, K.; Kanechika, M.Uedono, A.
Journal of Applied Physics 126: (2019) Semantic Scholar
79. Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, A.; Iguchi, H.; Narita, T.; Kataoka, K. (+7 著者) Ishibashi, S.
Physica Status Solidi (B) Basic Research 256: 1900104-1 (2019) Semantic Scholar
80. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu, S.F.; Shima, K.; Kojima, K.; Takashima, S.-Y. (+6 著者) Uedono, A.
Japanese Journal of Applied Physics 58: SC0802-1 (2019) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日