ホーム > 上殿明良/ Uedono, Akira

上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

101. Polarity-dependence of the defect formation in c -axis oriented ZnO by the irradiation of an 8 MeV proton beam Kazuto Koike; Mitsuaki Yano; Shun-Ichi Gonda; Akira Uedono (+2 著者) Shigefusa F. Chichibu
Journal of Applied Physics 123: (2018) Semantic Scholar
102. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN S. F. Chichibu; A. Uedono; K. Kojima; H. Ikeda (+4 著者) S. Ishibashi
Journal of Applied Physics 123: (2018) Semantic Scholar
103. Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams Akira Uedono; Toshihide Nabatame; Werner Egger; Tönjes Koschine (+3 著者) Shoji Ishibashi
Journal of Applied Physics 123: (2018) Semantic Scholar
104. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Akira Uedono; Shinya Takashima; Masaharu Edo; Katsunori Ueno (+7 著者) Shoji Ishibashi
Physica Status Solidi (B) Basic Research 255: (2018) Semantic Scholar
105. Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition Iwashita, S.; Moriya, T.; Uedono, A.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 36: (2018) Semantic Scholar
106. Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ) p-type GaN fabricated by sequential ion-implantation of Mg and H Shima, K.; Iguchi, H.; Narita, T.; Kataoka, K. (+2 著者) Chichibu, S.F.
Applied Physics Letters 113: (2018) Semantic Scholar
107. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Shinya Iwashita; Kazuki Denpoh; Munehito Kagaya; Takamichi Kikuchi (+3 著者) Akira Uedono
Thin Solid Films 660: 865 (2018) Semantic Scholar
108. Accelerator operation 2016 Sasa, Kimikazu; Ishii, Satoshi; Oshima, Hiroyuki; Takahashi, Tsutomu (+3 著者) Akira, Uedono
UTTAC ANNUAL REPORT 2016 3 (2017)
109. STATUS REPORT OF THE TANDEM ACCELERATOR COMPLEX AT THE UNIVERSITY OF TSUKUBA Sasa, Kimikazu; Ishii, Satoshi; Oshima, Hiroyuki; Takahashi, Tsutomu (+3 著者) Akira, Uedono
Proceedings of the 14th Annual Meeting of Particle Accelerator Society of Japan 1371 (2017)
110. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努 (+4 著者) 上殿明良
第30回タンデム加速器及びその周辺技術の研究会講演要旨集 (2017)
111. 単結晶ダイヤモンド検出器の開発及び評価原明日翔; 山崎聡; 牧野俊晴; 小泉聡 (+20 著者) 嶋岡毅紘
Meeting Abstracts of the Physical Society of Japan 72: 55 (2017)
112. Prediction of positron-annihilation parameters for vacancy-type defects in ternary alloy semiconductors by data-scientific approach Shoji Ishibashi; Hiori Kino; Akira Uedono; Takashi MiyakeKiyoyuki Terakura
14TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECHNIQUES & APPLICATIONS 791: (2017) Semantic Scholar
113. Behavior of copper contamination on backside damage for ultra-thin silicon three dimensional stacking structure Mizushima, Y.; Kim, Y.; Nakamura, T.; Uedono, A.Ohba, T.
Microelectronic Engineering 167: 23 (2017) Semantic Scholar
114. Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam Akira Uedono; Yusuke Tsukada; Yutaka Mikawa; Tae Mochizuki (+6 著者) Shigefusa F. Chichibu
Journal of Crystal Growth 448: 117 (2016) Semantic Scholar
115. Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer Kazunobu Kojima; Yusuke Tsukada; Erika Furukawa; Makoto Saito (+5 著者) Shigefusa F. Chichibu
Japanese Journal of Applied Physics 55: 05FA03-1 (2016) Semantic Scholar
116. Spatio-time-resolved cathodoluminescence study on high AlN mole fraction AlxGa1-xN structures grown by metalorganic vapor phase epitaxy Shigefusa F. Chichibu; Youichi Ishikawa; Kentaro Furusawa; Akira Uedono (+1 著者) Kazumasa Hiramatsu
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) (2016)
117. Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam Akira Uedono; Shinya Takashima; Masaharu Edo; Katsunori Ueno (+3 著者) Shoji Ishibashi
2016 16th International Workshop on Junction Technology (IWJT) 35 (2016)
118. Vacancy-type defects in GaN for power devices probed by positron annihilation Akira Uedono; Shoji Ishibashi; Nagayasu Oshima; Ryoichi Suzuki
Defect and Diffusion Forum 373: 183 (2016) Semantic Scholar
119. Characterization of Extreme Si Thinning Process for Wafer-to-Wafer Stacking Fumihiro Inoue; Anne Jourdain; Joeri De Vos; Erik Sleeckx (+6 著者) Akira Uedono
2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) 2095 (2016) Semantic Scholar
120. Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low-k dielectrics studied using monoenergetic positron beams Uedono, A.; Armini, S.; Zhang, Y.; Kakizaki, T. (+2 著者) Wagner, A.
Applied Surface Science 368: 272 (2016) Semantic Scholar

« 1 … 4 5 6 7 8 … 31 »

1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日