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上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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121. Computational studies of positron states and annihilation parameters in semiconductors - vacancy-type defects in group-III nitrides S. Ishibashi; A. Uedono
INTERNATIONAL WORKSHOP ON POSITRON STUDIES OF DEFECTS 2014 674: (2016) Semantic Scholar
122. Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam Uedono, A.; Zhao, M.; Simoen, E.
Journal of Applied Physics 120: (2016) Semantic Scholar
123. Impacts of dislocations and point defects on the internal quantum efficiency of the near-band-edge emission in ALGaN-based DUV light-emitting materials Shigefusa F. Chichibu; Hideto Miyake; Kazumasa Hiramtsu; Akira Uedono
Springer Series in Materials Science 227: 115 (2016) Semantic Scholar
124. 酸性アモノサーマル法合成GaN種結晶上にハイドライド気相エピタキシャル成長させたm面自立GaN基板の電気的・光学的特性小島一信; 塚田悠介; 古川えりか; 斉藤真 (+6 著者) 秩父重英
電子情報通信学会技術研究報告 115: 15‐19 (2015)
125. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method Kazunobu Kojima; Yusuke Tsukada; Erika Furukawa; Makoto Saito (+5 著者) Shigefusa F. Chichibu
Applied Physics Express 8: 095501-1 (2015) Semantic Scholar
126. Vacancies in In Uedono Akira; Kurihara Kaori; Yoshihara Nakaaki; Nagao SatoshiIshibashi Shoji
Appl. Phys. Express 8: 51002 (2015) Semantic Scholar
127. Free volume profiles at polymer-solid interfaces probed by focused slow positron beam Christian Ohrt; Klaus Rätzke; Nagayasu Oshima; Yoshinori Kobayashi (+3 著者) Franz Faupel
Macromolecules 48: 1493 (2015) Semantic Scholar
128. Thermal behavior of residual defects in low-dose arsenic- and boron-implanted silicon after high-temperature rapid thermal annealing Akihiko Sagara; Akira Uedono; Satoshi Shibata
IEEE Transactions on Semiconductor Manufacturing 28: 92 (2015) Semantic Scholar
129. Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam Uedono, A.; Takashima, S.; Edo, M.; Ueno, K. (+3 著者) Ishibashi, S.
Physica Status Solidi (B) Basic Research 252: 2794 (2015) Semantic Scholar
130. Investigation on photoluminescence, electrical and positron lifetime of Eu³⁺ activated Gd2O3 phosphors Selvalakshmi, T.; Sellaiyan, S.; Uedono, A.; Bose, A.C.
Materials Chemistry and Physics 166: 73 (2015) Semantic Scholar
131. Recent progress in gas barrier thin film coatings on PET bottles in food and beverage applications Nakaya, M.; Uedono, A.; Hotta, A.
Coatings 5: (2015) Semantic Scholar
132. Polarity Dependent Radiation Hardness of GaN Masayuki Matsuo; Takayuki Murayama; Kazuto Koike; Shigehiko Sasa (+9 著者) Shigefusa Chichibu
2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) (2015)
133. Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN Kataoka, K.; Kanechika, M.; Narita, T.; Kimoto, Y.Uedono, A.
Physica Status Solidi (B) Basic Research 252: 913 (2015) Semantic Scholar
134. Vacancies in InxGa1−xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam Uedono, Akira; Kurihara, Kaori; Yoshihara, Nakaaki; Nagao, SatoshiIshibashi, Shoji
Applied Physics Express 8: 51002 (2015) Semantic Scholar
135. 陽電子プローブ用静電加速システムの開発(28pAL X線・粒子線(電子線,陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン)) 大島, 永康; 木村, 彰吾; 渡邊, 智仁; 上殿, 明良 (+2 著者) 鈴木, 良一
Meeting abstracts of the Physical Society of Japan 69: 930 (2014)
136. 三次元積層向けウェハの裏面研削によるダメージ評価(配線・実装技術と関連材料技術) 水島, 賢子; 金, 永ソク; 中村, 友二; 杉江, 隆一 (+2 著者) 大場, 隆之
Technical report of IEICE. SDM 113: 13 (2014)
137. Impact of the difference in power frequency on diamond-like carbon thin film coating over 3-dimensional objects Nakaya, M.; Shimizu, M.; Uedono, A.
Thin Solid Films 564: 45 (2014) Semantic Scholar
138. Characterization of polyethylene terephthalate films coated with thin AlxSi1 - XOy layers using monoenergetic positron beams Uedono, A.; Murakami, S.; Inagaki, K.; Iseki, K. (+1 著者) Suzuki, R.
Thin Solid Films 552: 82 (2014) Semantic Scholar
139. Defects in nitride-based semiconductors probed by positron annihilation A. Uedono; M. Sumiya; S. Ishibashi; N. OshimaR. Suzuki
13TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECHNIQUES AND APPLICATIONS (SLOPOS13) 505: 012009-1 (2014) Semantic Scholar
140. Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams Uedono, A.; Mizushima, Y.; Kim, Y.; Nakamura, T. (+3 著者) Suzuki, R.
Journal of Applied Physics 116: (2014) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日