ホーム > 上殿明良/ Uedono, Akira

上殿明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

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141. Point defect characterization of group-III nitrides by using monoenergetic positron beams Akira Uedono; Shoji Ishibashi; Nagayasu Oshima; Ryoichi SuzukiMasatomo Sumiya
NANOSCALE LUMINESCENT MATERIALS 3 61: 19 (2014) Semantic Scholar
142. Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing Sagara, A.; Hiraiwa, M.; Uedono, A.; Oshima, N. (+1 著者) Shibata, S.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 321: 54 (2014) Semantic Scholar
143. Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration Mizushima, Y.; Kim, Y.; Nakamura, T.; Sugie, R. (+2 著者) Ohba, T.
Japanese Journal of Applied Physics 53: 05GE04 (2014) Semantic Scholar
144. Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam Uedono, A.; Yoshihara, N.; Zhang, Y.; Sun, M. (+6 著者) Palacios, T.
Applied Physics Express 7: 121001 (2014) Semantic Scholar
145. Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam Uedono, A.; Fujishima, T.; Cao, Y.; Zhang, Y. (+5 著者) Palacios, T.
Applied Physics Letters 104: (2014) Semantic Scholar
146. Investigation of defect related photoluminescence property of multicolour emitting Gd2O3:Dy³⁺ phosphor Selvalakshmi, T.; Sellaiyan, S.; Uedono, A.; Chandra Bose, A.
RSC Advances 4: 34257 (2014) Semantic Scholar
147. Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam Akira Uedono; Tatsuya Fujishima; Yu Cao; Sameer Joglekar (+9 著者) Tomas Palacios
2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 73 (2014)
148. Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam Uedono, A.; Fujishima, T.; Piedra, D.; Yoshihara, N. (+4 著者) Palacios, T.
Applied Physics Letters 105: (2014) Semantic Scholar
149. First-principles calculation of positron states and annihilation parameters for group-III nitrides S. Ishibashi; A. Uedono
13TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECHNIQUES AND APPLICATIONS (SLOPOS13) 505: (2014) Semantic Scholar
150. Leaching properties of chromate-containing epoxy films using radiotracers, PALS and SEM Selvakumar Sellaiyan; Anthony E. Hughes; Suzanne V. Smith; Akira Uedono (+1 著者) Stephen Buckman
Progress in Organic Coatings 77: 257 (2014) Semantic Scholar
151. Vacancy-type defects in InxGa1-xN grown on GaN templates probed using monoenergetic positron beams Akira Uedono; Tomohito Watanabe; Shogo Kimura; Yang Zhang (+5 著者) Masatomo Sumiya
JOURNAL OF APPLIED PHYSICS 114: (2013) Semantic Scholar
152. Characterization of porous structures in advanced low-k films with thin tan layers using monoenergetic positron beams Akira Uedono; Patrick Verdonck; Annelies Delabie; Johan Swerts (+5 著者) Ryoichi Suzuki
Japanese Journal of Applied Physics 52: (2013) Semantic Scholar
153. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects Hideharu Shimizu; Shuji Nagano; Akira Uedono; Nobuo Tajima (+1 著者) Yukihiro Shimogaki
Science and Technology of Advanced Materials 14: (2013) Semantic Scholar
154. Vacancy reactions near the interface between electroplated Cu and barrier metal layers studied by monoenergetic positron beams A. Uedono; T. Kirimura; C. J. Wilson; K. Croes (+3 著者) R. Suzuki
Journal of Applied Physics 114: (2013) Semantic Scholar
155. Positron annihilation spectroscopy on nitride-based semiconductors Akira Uedono; Shoji Ishibashi; Nagayasu Oshima; Ryoichi Suzuki
Japanese Journal of Applied Physics 52: (2013) Semantic Scholar
156. Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga 0.4N films grown on AlN templates by metalorganic vapor phase epitaxy S. F. Chichibu; H. Miyake; Y. Ishikawa; M. Tashiro (+4 著者) A. Uedono
Journal of Applied Physics 113: 213506-1 (2013) Semantic Scholar
157. Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys Shigefusa F. Chichibu; Takeyoshi Onuma; Kouji Hazu; Akira Uedono
Physica Status Solidi (C) Current Topics in Solid State Physics 10: 501 (2013) Semantic Scholar
158. 29aXZB-7 インダクションバンチャーを用いた高効率陽電子ビームパルス化システムの開発(29aXZB 領域10,ビーム物理領域合同 X線・粒子線(電子線・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン)) 金古, 岳史; 林崎, 規託; 大島, 永康; 木野, 村淳 (+5 著者) 上殿, 明良
Meeting abstracts of the Physical Society of Japan 68: 1049 (2013)
159. 29aXZB-8 産総研の新陽電子ビームライン施設の現状(29aXZB 領域10,ビーム物理領域合同 X線・粒子線(電子線・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン)) オローク, ブライアン; 大島, 永康; 木野, 村淳; 小川, 博嗣 (+4 著者) 上殿, 明良
Meeting abstracts of the Physical Society of Japan 68: 1049 (2013)
160. Influence of wafer thinning process on backside damage in 3D integration T. Nakamura; Y. Mizushima; H. Kitada; Y. S. Kim (+7 著者) T. Ohba
2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 1 (2013) Semantic Scholar

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1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
IOP PUBLISHING LTD 2011年1月
2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
IEEE 2009年1月 (ISBN: 9781424444915)
4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
WILEY-V C H VERLAG GMBH 2007年1月
5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
IEEE 2006年1月 (ISBN: 1424400163)
6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
IOP PUBLISHING LTD 2005年1月
7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
TRANS TECH PUBLICATIONS LTD 2004年1月

1. Electrical properties of silicon-implanted alpha-Al2O3 Okumura, Hironori; Jinno, Riena; UEdono, Akira; Imura, Masataka
The 4th International Workshop on Gallium Oxide and Related Materials 2022年10月23日
2. Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Ishibashi, Shoji; Uedono, Akira
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
3. Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy Uedono, Akira; Dickmann, Marcel; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji; Chichibu; Shigefusa F
Conference on Gallium Nitride Materials and Devices XV 2020年2月4日
4. Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams Uedono, A; Egger, W; Koschine, T; Hugenschmidt, C; Dickmann, M; Ishibashi, S
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
5. Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3 Ishibashi, S; Uedono, A
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS) 2019年9月2日
6. Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes Shima, Kohei; Kojima, Kazunobu; Uedono, Akira; Chichibu; Shigefusa F
19th International Workshop on Junction Technologies (IWJT) 2019年6月6日
7. Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy Inoue, Fumihiro; Peng, Lan; Iacovo, Serena; Nagano, Fuya; Sleeckx, Erik; Beyer, Gerald; Uedono, Akira; Beyne, Eric
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) 2019年5月21日
8. Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN - Uedono, Akira; Egger, Werner; Hugenschmidt, Christoph; Ishibashi, Shoji
Compound Semiconductor Week (CSW) Conference 2019年5月19日
9. Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Chichibu; Shigefusa F; Shima, Kohei; Kojima, Kazunobu; Takashima, Shin-ya; Ueno, Katsunori; Edo, Masaharu; Iguchi, Hiroko; Narita, Tetsuo; Kataoka, Keita; Ishibashi, Shoji; Uedono, Akira
International Workshop on Bulk Nitride Semiconductors (IWN) 2018年11月11日
10. 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出 Akira, Uedono; Islam, Muhammad Monirul; Sakurai, Takeaki; katsuhiro, Akimoto
2018年第79応用物理学会秋季学術講演会 2018年9月18日
11. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy Sumiya, M; Fukuda, K; Takashima, S; Ueda, S; Onuma, T; Yamaguchi, T; Honda, T; Uedono, A
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE) 2018年6月3日
12. Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films Iwashita, Shinya; Denpoh, Kazuki; Kagaya, Munehito; Kikuchi, Takamichi; Noro, Naotaka; Hasegawa, Toshio; Moriya, Tsuyoshi; Uedono, Akira
International Thin Films Conference (TACT) 2017年10月15日
13. Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE Yamazaki, A; Naramoto, H; Sasa, K; Ishii, S; Tomita, S; Sataka, M; Kudo, H; Ohkubo, M; Uedono, A
23rd International Conference on Ion Beam Analysis (IBA) 2017年10月8日
14. AIN metal-semiconductor field-effect transistors using Si-ion implantation Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomas
International Conference on Solid State Devices and Materials (SSDM) 2017年9月19日
15. The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Chichibu, S. F; Uedono, A; Kojima, K; Ikeda, H; Fujito, K; Takashima, S; Edo, M; Ueno, K; Ishibashi, S
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
16. Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Koike, Kazuto; Yano, Mitsuaki; Gonda, Shun-ichi; Uedono, Akira; Ishibashi, Shoji; Kojima, Kazunobu; Chichibu; Shigefusa F
29th International Conference on Defects in Semiconductors (ICDS) 2017年7月31日
17. 筑波大学タンデム加速器施設UTTACの現状（2016年度）森口, 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場大一郎; 笹公和; 上殿明良
第30回タンデム加速器及びその周辺技術の研究会 2017年7月6日
18. Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams Uedono, Akira; Takashima, Shinya; Edo, Masaharu; Ueno, Katsunori; Matsuyama, Hideaki; Egger, Werner; Koschine, Toenjes; Hugenschmidt, Christoph; Dickmann, Marcel; Kojima, Kazunobu; Chichibu; Shigefusa F; Ishibashi, Shoji
12th International Conference on Optics of Surfaces and Interfaces (OSI) 2017年6月25日
19. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日
20. Point defects in GaN and related group-III nitrides studied by means of positron annihilation Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro
Conference on Gallium Nitride Materials and Devices VI 2011年1月24日