ホーム > 上殿 明良/ Uedono, Akira

上殿 明良

Uedono, Akira

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

IWJT best paper

2025-06-06

上殿 明良
ISSM best paper

2024-12-10

上殿 明良 蓮沼 隆 重田 育照
ISSM Best Paper 数理物質系　上殿 明良、蓮沼 隆、計算科学研究センター　重田 育照

2022-12-13

上殿 明良 重田 育照 蓮沼 隆
応用物理学会優秀論文賞 数理物質系/エネルギー物質科学研究センター　上殿 明良

2021-07-05

上殿 明良
加速器・放射線を利用した豊かな未来社会の形成に向けて
高度制御量子ビームリサーチユニット
Toward the Formation of a Productive Future Society Utilizing Accelerators and Radiation

2015-03-16

笹 公和 上殿 明良 関場 大一郎 黒澤 正紀 小沢 顕 冨田 成夫 末木 啓介
オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。
  1. 1. Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam Akira Uedono; Hiroko Iguchi; Masahiro Horita; Jun Suda (+2 著者) Shoji Ishibashi
      physica status solidi (b) (2025)
  2. 2. Defects modification in thermoelectric Mg2Sn (Ge) epitaxial thin films through modulation of Mg flux rate in MBE Senados, Kenneth Magallon; Aizawa, Takashi; Ohkubo, Isao; Baba, Takahiro (+2 著者) Mori, Takao
      JOURNAL OF PHYSICS-ENERGY 7: (2025)
  3. 3. Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration Kitagawa, Hayato; Sato, Ryosuke; Ebiko, Sodai; Nagata, Atsushi (+4 著者) Inoue, Fumihiro
      ACS OMEGA 10: 27575 (2025)
  4. 4. Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements Shima, K.; Narita, T.; Uedono, A.; Bockowski, M. (+2 著者) Chichibu, S. F.
      JOURNAL OF APPLIED PHYSICS 137: (2025)
  5. 5. Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates Ryota Akaike; Kenjiro Uesugi; Kohei Shima; Shigefusa F. Chichibu (+2 著者) Hideto Miyake
      Applied Physics Express (2025)
  6. 6. Roles of Al-vacancy complexes on the luminescence spectra of Si-doped AlN grown by halide vapor phase epitaxy S. F. Chichibu; K. Kikuchi; B. Moody; S. Mita (+5 著者) K. Shima
      Applied Physics Letters 126: 111905 1 (2025)
  7. 7. Mechanistic Insights Into Microwave Annealing for Lattice Defect Recovery Satoshi Fujii; Soma Shimabukuro; Akira Uedono
      IEEE Journal of the Electron Devices Society (2025)
  8. 8. Characterization of Vacancy-Type Defects in Mg-and N-Implanted GaN by Using a Monoenergetic Positron Beam A. Uedono; R. Tanaka; S. Takashima; K. Ueno (+7 著者) M. Bockowski
      IEEE Journal of the Electron Devices Society (2025)
  9. 9. Vacancy-Type Defects in HfO2 Layers and Their Role in Amorphous-to-Crystalline Transition Studied by Monoenergetic Positron Beams Akira Uedono; Kazuya Kawakami; Tatsunori Kuribara; Ryu Hasunuma (+8 著者) Shoji Ishibashi
      IEEE Transactions on Semiconductor Manufacturing (2025)
  10. 10. Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams Akira Uedono; Ryu Hasunuma; Koki Onishi; Hayato Kitagawa (+2 著者) Nagayasu Oshima
      Journal of Applied Physics (2024) Semantic Scholar
  11. 11. Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography Akira Uedono; Claudia Fleischmann; Jean-Philippe Soulié; Mustafa Ayyad (+6 著者) Shoji Ishibashi
      ACS Applied Electronic Materials (2024) Semantic Scholar
  12. 12. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers Shigefusa F. Chichibu; Kohei Shima; Akira Uedono; Shoji Ishibashi (+15 著者) Yasuo Koide
      Journal of Applied Physics 135: (2024) Semantic Scholar
  13. 13. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method K. Shima; K. Kurimoto; Q. Bao; Y. Mikawa (+5 著者) S. F. Chichibu
      Applied Physics Letters 124: (2024) Semantic Scholar
  14. 14. Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications Onishi, Koki; Kitagawa, Hayato; Teranishi, Shunsuke; Uedono, AkiraInoue, Fumihiro
      ACS APPLIED ELECTRONIC MATERIALS 6: 2449 (2024)
  15. 15. Influence of Ge to the formation of defects in epitaxial Mg2Sn1−x Ge x thermoelectric thin films Kenneth Magallon Senados; Mariana S. L. Lima; Takashi Aizawa; Isao OHKUBO (+3 著者) Takao Mori
      Japanese Journal of Applied Physics (2024)
  16. 16. Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation Akira Uedono; Ryo Tanaka; Shinya Takashima; Katsunori Ueno (+7 著者) Michal Bockowski
      physica status solidi (b) (2024) Semantic Scholar
  17. 17. Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy T. Kimura; H. Shimazu; K. Kataoka; K. Itoh (+6 著者) D. Nakamura
      Applied Physics Letters 124: (2024)
  18. 18. Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE Sierakowski, Kacper; Jakiela, Rafal; Jaroszynski, Piotr; Fijalkowski, Michal (+6 著者) Bockowski, Michal
      MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 167: (2023) Semantic Scholar
  19. 19. Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams Uedono, Akira; Nogami, Takeshi; Gluschenkov, Oleg; Sulehria, Yasir (+5 著者) Okuno, Yasutoshi
      JOURNAL OF APPLIED PHYSICS 134: (2023)
  20. 20. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application Sumiya, Masatomo; Goto, Osamu; Takahara, Yuki; Imanaka, Yasutaka (+6 著者) Fujikura, Hajime
      JAPANESE JOURNAL OF APPLIED PHYSICS 62: (2023) Semantic Scholar
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  1. 1. 12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12) Uedono, A; Ishibashi, S; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Application of positron annihilation technique to front and backend processes for modern LSI devices)
    IOP PUBLISHING LTD 2011年1月
  2. 2. GALLIUM NITRIDE MATERIALS AND DEVICES VI Uedono, Akira; Ishibashi, Shoji; Chichibu; Shigefusa F; Akimoto, Katsuhiro (担当:分担執筆, 範囲:Point defects in GaN and related group-III nitrides studied by means of positron annihilation)
    SPIE-INT SOC OPTICAL ENGINEERING 2011年1月 (ISBN: 9780819484765)
  3. 3. PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE Uedono, A; Inoue, N; Hayashi, Y; Eguchi, K; Nakamura, T; Hirose, Y; Yoshimaru, M; Oshima, N; Ohdaira, T; Suzuki, R (担当:分担執筆, 範囲:Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams)
    IEEE 2009年1月 (ISBN: 9781424444915)
  4. 4. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10 Uedono, A; Naito, T; Otsuka, T; Ito, K; Shiraishi, K; Yamabe, K; Miyazaki, S; Watanabe, H; Umezawa, N; Hamid, A; Chikyow, T; Ohdaira, T; Suzuki, R; Ishibashi, S; Inumiya, S; Kamiyama, S; Akasaka, Y; Nara, Y; Yamada, K (担当:分担執筆, 範囲:Study of high-k gate dielectrics by means of positron annihilation)
    WILEY-V C H VERLAG GMBH 2007年1月
  5. 5. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2 Shimizu, Yukiko; Miyashita, Naoya; Mura, Yusuke; Uedono, Akira; Okada, Yoshitaka (担当:分担執筆, 範囲:Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications)
    IEEE 2006年1月 (ISBN: 1424400163)
  6. 6. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS Shimizu, Y; Kobayashi, N; Uedono, A; Okada, Y (担当:分担執筆, 範囲:Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE)
    IOP PUBLISHING LTD 2005年1月
  7. 7. FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES Uedono, A; Mitsuhashi, R; Horiuchi, A; Torii, K; Yamabe, K; Yamada, K; Suzuki, R; Ohdaira, T; Mikado, T (担当:分担執筆, 範囲:Point defects in thin HfAIO(x) films probed by monoenergetic positron beams)
    MATERIALS RESEARCH SOCIETY 2004年1月 (ISBN: 1558997245)
  8. 8. POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS Uedono, A; Kiyohara, M; Shimoyama, K; Matsunaga, Y; Yasui, N; Yamabe, K (担当:分担執筆, 範囲:Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam)
    TRANS TECH PUBLICATIONS LTD 2004年1月

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