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佐野 伸行

ALUMNI 2025年8月現在、筑波大学が主たる所属機関ではありません

Sano, Nobuyuki

筑波大学 , 筑波大学 , 名誉教授
University of Tsukuba , University of Tsukuba , Professor Emeritus

http://www.bk.tsukuba.ac.jp/~dev-phys/

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。
  1. 1. Nonequilibrium Green's Function Formalism Applicable to Discrete Impurities in Semiconductor Nanostructures Sano, Nobuyuki
      Physical Review B 111: 125413_1 (2025)
  2. 2. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Nonequilibrium Green’s Function Scheme Sano, Nobuyuki; Yoshida, Katsuhisa; Tsukahara, Kohei; Park, Gyutae
      IEEE TRANSACTIONS ON ELECTRON DEVICES 72: 24 (2025)
  3. 3. Shallow p-n Junctions under Discrete Impurities in Semiconductor Devices Sano, Nobuyuki
      IEEE TRANSACTIONS ON ELECTRON DEVICES ED-71: 965 (2024) Semantic Scholar
  4. 4. Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carrier Sano, Nobuyuki
      2023 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2023) 1 (2023)
  5. 5. 半導体デバイスモデリング講座 佐野, 伸行
      SONY Special Lecture (2022)
  6. 6. 半導体デバイスにおける物理モデリングとシミュレーションの現状とその意味 佐野, 伸行
      Sony Public Lecture (2022)
  7. 7. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Monte Carlo Simulation Scheme Sano, Nobuyuki; Fukui, Takayuki
      IEEE TRANSACTIONS ON ELECTRON DEVICES 68: 5394 (2021) Semantic Scholar
  8. 8. Quantum kinetic equation for the Wigner function and reduction to the Boltzmann transport equation under discrete impurities Sano, Nobuyuki
      PHYSICAL REVIEW E 104: (2021) Semantic Scholar
  9. 9. Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells Lafuente-Sampietro, Alban; Yoshida, Katsuhisa; Wang, Shenghao; Ishizuka, Shogo (+3 著者) SAKURAI, TAKEAKI
      Solar Energy Materials and Solar Cells 223: 110948 (2020) Semantic Scholar
  10. 10. Potential application of p-i-n semiconductor capacitor with non-linear voltage-charge characteristic for secondary battery Yoshida, Katsuhisa; Sano, Nobuyuki
      JOURNAL OF APPLIED PHYSICS 128: (2020) Semantic Scholar
  11. 11. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Drift-Diffusion Simulation Scheme Sano, Nobuyuki; Yoshida, Katsuhisa; Tsukahara, Kohei; Park, Gyutae
      IEEE TRANSACTIONS ON ELECTRON DEVICES 67: 3323 (2020) Semantic Scholar
  12. 12. Ambipolar device simulation based on the drift- diffusion model in ion-gated transition metal dichalcogenide transistors Ueda, Akiko; Zhang, Yijin; Sano, Nobuyuki; Imamura, HiroshiIwasa, Yoshihiro
      npj Computational Materials 6: 24 (2020)
  13. 13. Monte Carlo simulation of random dopant fluctuation in C-V characteristics using image charge model and adequately determined length scale Chih-Wei, Yao; Sano, Nobuyuki; Watanabe, Hiroshi
      JAPANESE JOURNAL OF APPLIED PHYSICS 58: (2019) Semantic Scholar
  14. 14. Polarization Effect due to Discreteness of Dopants in Nano-Scale MOSFETs Yoshida, Katsuhisa; Tsukahara, Kohei; Sano, Nobuyuki
      IEEE Trans. Electron Dev. ED-66: 4343 (2019) Semantic Scholar
  15. 15. Physics of Discrete Impurities under the Frameworkof Device Simulations for Nanostructure Devices Sano, Nobuyuki; Yoshida, Katsuhisa; Yao, Chih-Wei; Watanabe, Hiroshi
      Materials (Basel, Switzerland) 11: (2018) Semantic Scholar
  16. 16. Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy Shinji Saito; Masahiko Yoshiki; Shinya Nunoue; Nobuyuki Sano
      JAPANESE JOURNAL OF APPLIED PHYSICS 56: 0210003 (2017) Semantic Scholar
  17. 17. Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands Syuta Honda; Kouhei Inuzuka; Takeshi Inoshita; Norio OtaNobuyuki Sano
      JOURNAL OF PHYSICS D-APPLIED PHYSICS 47: (2014) Semantic Scholar
  18. 18. Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations Katsuhisa Yoshida; Toru Shibamiya; Nobuyuki Sano
      APPLIED PHYSICS LETTERS 105: (2014) Semantic Scholar
  19. 19. ジャンクションレストランジスタにおけるNEGF法を用いたデバイスシミュレーション : 不純物散乱と遮蔽の影響の考察(プロセス・デバイス・回路シュミレーション及び一般) 植田, 暁子; Luisier, Mathieu; 吉田, 勝尚; 本多, 周太佐野, 伸行
      Technical report of IEICE. SDM 113: 61 (2013)
  20. 20. Surface potential-based polycrystalline-silicon thin-film transistors compact model by Nonequilibrium approach Hiroyuki Ikeda; Nobuyuki Sano
      IEEE Transactions on Electron Devices 60: 3417 (2013) Semantic Scholar
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  1. 1. 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) Sano, Nobuyuki (担当:分担執筆, 範囲:Space-Average Impurity-Limited Resistance and Self-Averaging in Quasi-1D Nanowires)
    IEEE 2016年 (ISBN: 9781467386098)
  2. 2. TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Sano, Nobuyuki; Karasawa, Takahiko (担当:分担執筆, 範囲:Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction)
    TRANS TECH PUBLICATIONS LTD 2011年1月
  3. 3. 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Nakanishi, Kohei; Uechi, Tadayoshi; Sano, Nobuyuki (担当:分担執筆, 範囲:Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition)
    IEEE 2009年1月 (ISBN: 9781424456390)
  4. 4. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki (担当:分担執筆, 範囲:3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes)
    WILEY-V C H VERLAG GMBH 2008年1月
  5. 5. 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 Yamada, Tatsuya; Sano, Nobuyuki (担当:分担執筆, 範囲:Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs)
    IEEE 2007年1月 (ISBN: 9781424418916)
  6. 6. (INVITED) Impact Ionization in Submicron and Sub-0.1 Micron Si-MOSFET's 佐野, 伸行
    Plenum 1996年1月
  7. 7. Nonlocality of Impact Ionization Processes under Inhomogeneous Electric Fields : A Full-Band Monte Carlo Approach 佐野, 伸行
    1993年1月
  8. 8. Monte Corlo Simulation of Ionization Phenomena in Si-MOSFET's 佐野, 伸行
    1991年1月
  9. 9. A Theoretical Study on Dielectric Breakdown 佐野, 伸行
    1988年8月
  1. 1. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 II ~半導体ナノ構造でのランダム不純物~ 佐野, 伸行
    電子情報通信学会 シリコン材料・デバイス(SDM)研究会集会 2019年11月7日 電子情報通信学会 招待有り
  2. 2. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
    The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
  3. 3. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
    The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
  4. 4. Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET Sano,Nobuyuki
    2019 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2019) 2019年9月4日 IEEE
  5. 5. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
    Special Seminar at the School of Engineering and Architecture 2019年5月30日 University of Bologna 招待有り
  6. 6. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
    Special Seminar at the Department of Physics 2019年5月16日 University of Modena and Reggio-Emilia 招待有り
  7. 7. 微細構造デバイスシミュレーションにおける局所的な乱れによるポテンシャルゆらぎの物理的側面 佐野,伸行
    第65回応用物理学会春季学術講演会 シンポジウム「デバイスシミュレーション技術の活用と将来展望」 2018年3月17日 応用物理学会 招待有り
  8. 8. モンテカルロ・デバイスシミュレーションの基本的側面と応用 佐野,伸行
    第3回CDMSI（ポスト「京」重点課題（７））シンポジウム 2017年12月5日 招待有り
  9. 9. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 ~ランダム不純物ばらつきと自己平均化~ 佐野,伸行
    電子情報通信学会 シリコン材料・デバイス(SDM)研究会集会 2017年11月9日 シリコン材料・デバイス(SDM)研究会集会 招待有り
  10. 10. Fundamental Aspects of Discrete Impurity Model for Nano-Scale Device Simulations Sano,Nobuyuki
    Seminar on Noise and Reliability in Silicon Electronics 2017年11月1日 National Chiao Tung University 招待有り
  11. 11. Variability and Self-Average of Impurity-limited Resistance in Semiconductor Nanowires Sano,Nobuyuki
    7th Annual World Congress of Nano Science & Technology-2017 2017年10月24日 招待有り
  12. 12. Physical Issues in Device Modeling: Length-Scale, Disorder, and Phase Interference Sano, Nobuyuki
    International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2017年9月7日 招待有り
  13. 13. Large Mobility Modulation Due to Discrete Impurities in Nanowires Sano, Nobuyuki
    Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 held during the PRiME Joint Int Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society 2016年10月2日 招待有り
  14. 14. Self-Consistent Monte-Carlo Simulations for Modern Electron Devices Sano,Nobuyuki
    nternational Conference on Solid State Materials and Devices (SSDM-2016) 2016年9月26日 招待有り
  15. 15. Monte Carlo Study of the long-range Coulomb interaction for Junctionless Transistors 佐野,伸行
    International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
  16. 16. Effect of Impurity Scattering on Mobility in Si Nanowire Junctionless FETs 佐野,伸行
    International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
  17. 17. Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System Abe, Shin-ichiro; Watanabe, Yukinobu; Shibano, Nozomi; Sano, Nobuyuki; Furuta, Hiroshi; Tsutsui, Masafumi; Uemura, Taiki; Arakawa, Takahiko
    Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop 2011年9月19日
  18. 18. Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction Sano, Nobuyuki; Karasawa, Takahiko
    International Symposium on Technology Evolution for Silicon Nano-Electronics 2010年6月3日
  19. 19. Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs Yamada, Tatsuya; Sano, Nobuyuki
    International Semiconductor Device Research Symposium 2007年12月12日
  20. 20. 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki
    15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors 2007年10月8日
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