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佐野伸行

Sano, Nobuyuki

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

http://www.bk.tsukuba.ac.jp/~dev-phys/

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

41. Self-Consistent Simulation of Intermediate Band Solar Cell: Effect of Occupation Rate on Device Characteristics Katsuhisa, Yoshida; Yoshitaka, Okada; Nobuyuki, Sano
Appl. Phys. Lett. 97: 133503_1-3 (2010)
42. Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors Hiroyuki Ikeda; Nobuyuki Sano
JAPANESE JOURNAL OF APPLIED PHYSICS 48: (2009) Semantic Scholar
43. Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k P-Channel Field Effect Transistors Using Ion-Beam W Fumio Ootsuka; Akira Katakami; Kiyoshi Shirai; Hiroyuki Nakata (+6 著者) Kikuo Yamabe
JAPANESE JOURNAL OF APPLIED PHYSICS 48: (2009) Semantic Scholar
44. Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source M.V.Fischetti; S., Jin; T.-w., Tang; P., Asbeck (+4 著者) 佐野, 伸行
J.Comp. Electron. 8: 60-77 (2009) Semantic Scholar
45. Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Variability Takahiko., Karasawa; Kohei, Nakanishi; and; Nobuyuki Sano佐野, 伸行
Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2009) xx (2009) Semantic Scholar
46. (INVITED) Simulation of Electron Transport in Si Nano Devices Nobuyuki, Sano
Proceedings of G-COE PICE International Symposium on Silicon Nano Devices in 2030 - Prospects by World's Leading Scientists pp.xxx (2009)
47. Physical Model and Mesh-Size Dependence in Drift-Diffusion Simulations for Single-Event Effects by Heavy Ions N., Shibano; N., Sano; Y., Tosaka; H., Furuta (+2 著者) K. Imamura
Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2009) xx (2009) Semantic Scholar
48. Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice (Best paper Award) Katsuhisa, Yoshida; Yoshitaka, Okada; Nobuyuki, Sano
Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009) xx (2009)
49. (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source M.V.Fischetti; S., Jin; T.-w., Tang; P., Asbeck (+4 著者) 佐野, 伸行
Proceedings of International Workshop on Computational Electronics (IWCE-13) pp.xxx (2009)
50. (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source M.V.Fischetti; S., Jin; T.-w., Tang; P., Asbeck (+4 著者) 佐野, 伸行
Proceedings of Connecticut Workshop on Microelectronics and Optoelectronics pp.xxx (2009)
51. 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations Tadayoshi, Uechi; Takayuki, Fukui; and; Nobuyuki Sano佐野, 伸行
J.Comp. Electron. 7: 240-243 (2008) Semantic Scholar
52. Consistency of Boundary Conditions in Nonequilibrium Green’s Function Simulations Suguru, Sato; Nobuyuki, Sano
J.Comp. Electron. 7: 301-304 (2008) Semantic Scholar
53. Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction FUKUI, Takayuki; UECHI, Tadayoshi; SANO, Nobuyuki
Applied physics express 1: 51407 (2008) Semantic Scholar
54. 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes Tadayoshi, Uechi; Takayuki, Fukui; and; Nobuyuki Sano佐野, 伸行
Phys. stat. sol.(c) 5: 102-106 (2008)
55. 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes Tadayoshi, Uechi; Takayuki, Fukui; and; Nobuyuki Sano佐野, 伸行
Phys. stat. sol.(c) 5: 102-106 (2008)
56. Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study Shuichi, Toriyama; Kazuya, Matsuzawa; and; Nobuyuki Sano佐野, 伸行
Proceedings of International Conference on Solid State Materials and Devices (SSDM-2008) pp.892-893 (2008)
57. 3D Monte Carlo Analysis ofpotential Fluctuations under High Electron Concentrations Tadayoshi, Uechi; Takayuki, Fukui; Nobuyuki, Sano
Proceedings of International Workshop on Computational Electronics (IWCE-12) 7: 128-129 (2007) Semantic Scholar
58. Electron Transport Simulations Including Full Coulomb Interaction in Si Takayuki, Fukui; Tadayoshi, Uechi; and; Nobuyuki Sano佐野, 伸行
Proceedings of International Workshop on Computational Electronics (IWCE-12) 102-103 (2007)
59. Scaling Dependence of Electron Transport in Nano-scale Shottky Barrier MOSFETs Shuichi, Toriyama; Nobuyuki, Sano
Proceedings of International Workshop on Computational Electronics (IWCE-12) 7: 141-142 (2007) Semantic Scholar
60. Consistency of Boundary Conditions in Nonequilibrium Green’s Function Simulations Suguru, Sato; Hiroyuki, Kusaka; Nobuyuki, Sano
Proceedings of International Workshop on Computational Electronics (IWCE-12) 7: 205-206 (2007) Semantic Scholar

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1. 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) Sano, Nobuyuki (担当:分担執筆, 範囲:Space-Average Impurity-Limited Resistance and Self-Averaging in Quasi-1D Nanowires)
IEEE 2016年 (ISBN: 9781467386098)
2. TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Sano, Nobuyuki; Karasawa, Takahiko (担当:分担執筆, 範囲:Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction)
TRANS TECH PUBLICATIONS LTD 2011年1月
3. 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Nakanishi, Kohei; Uechi, Tadayoshi; Sano, Nobuyuki (担当:分担執筆, 範囲:Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition)
IEEE 2009年1月 (ISBN: 9781424456390)
4. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki (担当:分担執筆, 範囲:3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes)
WILEY-V C H VERLAG GMBH 2008年1月
5. 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 Yamada, Tatsuya; Sano, Nobuyuki (担当:分担執筆, 範囲:Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs)
IEEE 2007年1月 (ISBN: 9781424418916)
6. (INVITED) Impact Ionization in Submicron and Sub-0.1 Micron Si-MOSFET's 佐野, 伸行
Plenum 1996年1月
7. Nonlocality of Impact Ionization Processes under Inhomogeneous Electric Fields : A Full-Band Monte Carlo Approach 佐野, 伸行
1993年1月
8. Monte Corlo Simulation of Ionization Phenomena in Si-MOSFET's 佐野, 伸行
1991年1月
9. A Theoretical Study on Dielectric Breakdown 佐野, 伸行
1988年8月

1. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 II ~半導体ナノ構造でのランダム不純物~ 佐野, 伸行
電子情報通信学会シリコン材料・デバイス(SDM)研究会集会 2019年11月7日電子情報通信学会招待有り
2. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
3. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
4. Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET Sano,Nobuyuki
2019 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2019) 2019年9月4日 IEEE
5. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
Special Seminar at the School of Engineering and Architecture 2019年5月30日 University of Bologna 招待有り
6. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
Special Seminar at the Department of Physics 2019年5月16日 University of Modena and Reggio-Emilia 招待有り
7. 微細構造デバイスシミュレーションにおける局所的な乱れによるポテンシャルゆらぎの物理的側面佐野,伸行
第65回応用物理学会春季学術講演会シンポジウム「デバイスシミュレーション技術の活用と将来展望」 2018年3月17日応用物理学会招待有り
8. モンテカルロ・デバイスシミュレーションの基本的側面と応用佐野,伸行
第3回CDMSI（ポスト「京」重点課題（７））シンポジウム 2017年12月5日招待有り
9. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 ~ランダム不純物ばらつきと自己平均化~ 佐野,伸行
電子情報通信学会シリコン材料・デバイス(SDM)研究会集会 2017年11月9日シリコン材料・デバイス(SDM)研究会集会招待有り
10. Fundamental Aspects of Discrete Impurity Model for Nano-Scale Device Simulations Sano,Nobuyuki
Seminar on Noise and Reliability in Silicon Electronics 2017年11月1日 National Chiao Tung University 招待有り
11. Variability and Self-Average of Impurity-limited Resistance in Semiconductor Nanowires Sano,Nobuyuki
7th Annual World Congress of Nano Science & Technology-2017 2017年10月24日招待有り
12. Physical Issues in Device Modeling: Length-Scale, Disorder, and Phase Interference Sano, Nobuyuki
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2017年9月7日招待有り
13. Large Mobility Modulation Due to Discrete Impurities in Nanowires Sano, Nobuyuki
Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 held during the PRiME Joint Int Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society 2016年10月2日招待有り
14. Self-Consistent Monte-Carlo Simulations for Modern Electron Devices Sano,Nobuyuki
nternational Conference on Solid State Materials and Devices (SSDM-2016) 2016年9月26日招待有り
15. Monte Carlo Study of the long-range Coulomb interaction for Junctionless Transistors 佐野,伸行
International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
16. Effect of Impurity Scattering on Mobility in Si Nanowire Junctionless FETs 佐野,伸行
International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
17. Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System Abe, Shin-ichiro; Watanabe, Yukinobu; Shibano, Nozomi; Sano, Nobuyuki; Furuta, Hiroshi; Tsutsui, Masafumi; Uemura, Taiki; Arakawa, Takahiko
Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop 2011年9月19日
18. Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction Sano, Nobuyuki; Karasawa, Takahiko
International Symposium on Technology Evolution for Silicon Nano-Electronics 2010年6月3日
19. Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs Yamada, Tatsuya; Sano, Nobuyuki
International Semiconductor Device Research Symposium 2007年12月12日
20. 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki
15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors 2007年10月8日