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佐野伸行

Sano, Nobuyuki

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

http://www.bk.tsukuba.ac.jp/~dev-phys/

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

61. Consistency of Boundary Conditions in Nonequilibrium Green’s Function Simulations Suguru, Sato; Hiroyuki, Kusaka; Nobuyuki, Sano
Proceedings of International Workshop on Computational Electronics (IWCE-12) 7: 205-206 (2007) Semantic Scholar
62. Schottky Barrier MOSFETs as Resonant Tunneling Devices TORIYAMA, Shuichi; SANO, Nobuyuki
Extended abstracts of the ... Conference on Solid State Devices and Materials 2007: 48 (2007)
63. Effects of Gate-Edge Metamorphoses (GEM) on Device Characteristics of Scaled MOSFETs Tatsuya, Yamada; Nobuyuki, Sano
Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2007) WP8-01 (2007)
64. Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures KUSAKA, Hiroyuki; SANO, Nobuyuki
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006: 356 (2006)
65. Hot Electrons Associated with the Long-Range Coulomb Interaction under the High-Density Regime Tadayoshi, Uechi; Nobuyuki, Sano
Proceedings of 2006 VLSI-TSA Technology Symposium (2006 VLSI-TSA) 141 (2006)
66. Device Simulation of Random Dopant Effects in Ultra- small MOSFETs Based on Advanced Physical Models Shuichi, Toriyama; Daisuke, Hagishima; Kazuya, Matsuzawa; and (+1 著者) 佐野, 伸行
Proceedings of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2006) 145-146 (2006) Semantic Scholar
67. Coulomb and phonon scattering processes in metal-oxide-semiconductor inversion layers: Beyond Matthiessen's rule T Ishihara; N Sano
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44: 1682 (2005) Semantic Scholar
68. 極微細半導体素子における準弾道電子輸送の運動論的考察(半導体材料・デバイス) 佐野, 伸行
The transactions of the Institute of Electronics, Information and Communication Engineers. C 88: 261 (2005)
69. Gate Tunneling Current Fluctuations Associated with Random Dopant Effects Shuichi, Toriyama; Kazuya, Matsuzawa; and; Nobuyuki Sano佐野, 伸行
Proceedings of The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2005) 23-26 (2005)
70. (INVITED) Electron Transport and Particle-based Simulations for Nanoscale Semiconductor Devices Nobuyuki, Sano; Hiroyuki, Kusaka
Proceedings of 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK-2005) 25-26 (2005)
71. Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers: Beyond Matthiessen's Rule Takamitsu, Ishihara; Nobuyuki, Sano
Jpn. J. Appl. Phys 44: 1682-1686 (2005)
72. Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices Nobuyuki, Sano
Electronic Communications in Japan 88: 1-9 (2005)
73. Kinetic study of quasi-ballistic electron transport in nanoscale semiconductor devices N Sano
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 88: 1 (2005) Semantic Scholar
74. (INVITED) Electron Transport in Nanoscale Semiconductor Devices: Ballistic vs. Quasiballistic Nobuyuki, Sano
Proceedings of 2005 VLSI-TSA Technology Symposium (VLSI-TSA-2005) 58-61 (2005)
75. Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature? Nobuyuki, Sano
Phys. Rev. Lett. 93: 246803_1-4 (2004)
76. Kinetics of quasiballistic transport in nanoscale semiconductor structures: Is the ballistic limit attainable at room temperature? N Sano
PHYSICAL REVIEW LETTERS 93: (2004) Semantic Scholar
77. Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy O Takeuchi; M Aoyama; R Oshima; Y Okada (+4 著者) M Yamashita
APPLIED PHYSICS LETTERS 85: 3268 (2004) Semantic Scholar
78. 運動論的観点からの準弾道電子輸送の理論的考察(<特集>プロセス・デバイス・回路シミュレーション及び一般) 佐野, 伸行
Technical report of IEICE. VLD 104: 45 (2004)
79. Impact ionization coefficients of 4H silicon carbide T Hatakeyama; T Watanabe; T Shinohe; K Kojima (+1 著者) N Sano
APPLIED PHYSICS LETTERS 85: 1380 (2004) Semantic Scholar
80. Stable Simulation of Impurity Fluctuation for Contact Resistance and Schottky Diodes Kazuya, Matsuzawa; Nobuyuki, Sano
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004) 231-234 (2004)

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1. 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) Sano, Nobuyuki (担当:分担執筆, 範囲:Space-Average Impurity-Limited Resistance and Self-Averaging in Quasi-1D Nanowires)
IEEE 2016年 (ISBN: 9781467386098)
2. TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Sano, Nobuyuki; Karasawa, Takahiko (担当:分担執筆, 範囲:Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction)
TRANS TECH PUBLICATIONS LTD 2011年1月
3. 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Nakanishi, Kohei; Uechi, Tadayoshi; Sano, Nobuyuki (担当:分担執筆, 範囲:Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition)
IEEE 2009年1月 (ISBN: 9781424456390)
4. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki (担当:分担執筆, 範囲:3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes)
WILEY-V C H VERLAG GMBH 2008年1月
5. 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 Yamada, Tatsuya; Sano, Nobuyuki (担当:分担執筆, 範囲:Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs)
IEEE 2007年1月 (ISBN: 9781424418916)
6. (INVITED) Impact Ionization in Submicron and Sub-0.1 Micron Si-MOSFET's 佐野, 伸行
Plenum 1996年1月
7. Nonlocality of Impact Ionization Processes under Inhomogeneous Electric Fields : A Full-Band Monte Carlo Approach 佐野, 伸行
1993年1月
8. Monte Corlo Simulation of Ionization Phenomena in Si-MOSFET's 佐野, 伸行
1991年1月
9. A Theoretical Study on Dielectric Breakdown 佐野, 伸行
1988年8月

1. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 II ~半導体ナノ構造でのランダム不純物~ 佐野, 伸行
電子情報通信学会シリコン材料・デバイス(SDM)研究会集会 2019年11月7日電子情報通信学会招待有り
2. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
3. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
4. Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET Sano,Nobuyuki
2019 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2019) 2019年9月4日 IEEE
5. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
Special Seminar at the School of Engineering and Architecture 2019年5月30日 University of Bologna 招待有り
6. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
Special Seminar at the Department of Physics 2019年5月16日 University of Modena and Reggio-Emilia 招待有り
7. 微細構造デバイスシミュレーションにおける局所的な乱れによるポテンシャルゆらぎの物理的側面佐野,伸行
第65回応用物理学会春季学術講演会シンポジウム「デバイスシミュレーション技術の活用と将来展望」 2018年3月17日応用物理学会招待有り
8. モンテカルロ・デバイスシミュレーションの基本的側面と応用佐野,伸行
第3回CDMSI（ポスト「京」重点課題（７））シンポジウム 2017年12月5日招待有り
9. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 ~ランダム不純物ばらつきと自己平均化~ 佐野,伸行
電子情報通信学会シリコン材料・デバイス(SDM)研究会集会 2017年11月9日シリコン材料・デバイス(SDM)研究会集会招待有り
10. Fundamental Aspects of Discrete Impurity Model for Nano-Scale Device Simulations Sano,Nobuyuki
Seminar on Noise and Reliability in Silicon Electronics 2017年11月1日 National Chiao Tung University 招待有り
11. Variability and Self-Average of Impurity-limited Resistance in Semiconductor Nanowires Sano,Nobuyuki
7th Annual World Congress of Nano Science & Technology-2017 2017年10月24日招待有り
12. Physical Issues in Device Modeling: Length-Scale, Disorder, and Phase Interference Sano, Nobuyuki
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2017年9月7日招待有り
13. Large Mobility Modulation Due to Discrete Impurities in Nanowires Sano, Nobuyuki
Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 held during the PRiME Joint Int Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society 2016年10月2日招待有り
14. Self-Consistent Monte-Carlo Simulations for Modern Electron Devices Sano,Nobuyuki
nternational Conference on Solid State Materials and Devices (SSDM-2016) 2016年9月26日招待有り
15. Monte Carlo Study of the long-range Coulomb interaction for Junctionless Transistors 佐野,伸行
International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
16. Effect of Impurity Scattering on Mobility in Si Nanowire Junctionless FETs 佐野,伸行
International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
17. Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System Abe, Shin-ichiro; Watanabe, Yukinobu; Shibano, Nozomi; Sano, Nobuyuki; Furuta, Hiroshi; Tsutsui, Masafumi; Uemura, Taiki; Arakawa, Takahiko
Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop 2011年9月19日
18. Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction Sano, Nobuyuki; Karasawa, Takahiko
International Symposium on Technology Evolution for Silicon Nano-Electronics 2010年6月3日
19. Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs Yamada, Tatsuya; Sano, Nobuyuki
International Semiconductor Device Research Symposium 2007年12月12日
20. 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki
15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors 2007年10月8日