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佐野伸行

ALUMNI 2025年5月現在、筑波大学が主たる所属機関ではありません

Sano, Nobuyuki

筑波大学 , 数理物質系 , 教授
University of Tsukuba , Institute of Pure and Applied Sciences , Professor

http://www.bk.tsukuba.ac.jp/~dev-phys/

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

141. (INVITED) Device-Lifetime Uncertainty associated with Intrinsic Anisotropy of Impact Ionization in Si-MOSFET's 佐野, 伸行
Proceedings of the International Electron Devices and Materials Symposia(IEDMS-96)y 313 (1996)
142. (INVITED) Quantum Kinetic Transpart under High Electric Fieldso 佐野, 伸行
Proceedings of the International Workshop on Computational Electronics (IWCE-95) 1 (1995)
143. Impact-ionization model consistent with the band structure of semiconductors Nobuyuki Sano; Akira Yoshii
Journal of Applied Physics 77: 2020 (1995) Semantic Scholar
144. Temperature Dependence of Hot Carrier Effects in Short-Channel Si-MOSFET's 佐野, 伸行
IEEE Transactions on Electron Devices ED-42: 2211 (1995) Semantic Scholar
145. A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport in Silicon 佐野, 伸行
IEEE Transactions on Electron Devices ED-41: 1646 (1994) Semantic Scholar
146. Impact Ionization Rate near Thersholds in Si 佐野, 伸行
Journal of Apphed Physics 75: 5102 (1994) Semantic Scholar
147. (INVITED) Energy Brodening Associate with Finite Collision Duration in Hot Carrier Transport in Semiconductors 佐野, 伸行
Proceedings of the International Workshop on VLSI Process and Device Modeling (VPAD-93) 162 (1993)
148. Energy Broadening in Ultrafast Relaxation Processes of Photoexcited Electrons 佐野, 伸行
Physical Review B 48: 1426 (1993) Semantic Scholar
149. Quasi-zero-dimensional states in ballistic quantum wires Toshihiro Itoh; Nobuyuki Sano; Akira Yoshii
Physical Review B 47: 16601 (1993) Semantic Scholar
150. Impact-ionization theory consistent with a realistic band structure of silicon Nobuyuki Sano; Akira Yoshii
Physical Review B 45: 4171 (1992) Semantic Scholar
151. Quantum Effects on Electron-Phonon Interaction under High Electric Field in Semiconductors 佐野, 伸行
Semiconductor Science and Technology 7: B36 (1992) Semantic Scholar
152. Transport Properties of Ballistic Quantum Wire 佐野, 伸行
Proceedings of the International Conference on Solid State Devices and Materials (SSDM-92) 753 (1992)
153. Effects of width increase in the ballistic quantum wire Toshihiro Itoh; Nobuyuki Sano; Akira Yoshii
Physical Review B 45: 14131 (1992) Semantic Scholar
154. Hot-carrier luminescence in Si Jeff Bude; Nobuyuki Sano; Akira Yoshii
Physical Review B 45: 5848 (1992) Semantic Scholar
155. Direct Comparison of Quantum and Classical Descriptions of High-Field Carrier Transport in Semiconductors 佐野, 伸行
Journsl of Applied Physics 70: 3127 (1991) Semantic Scholar
156. (INVITED) Monte Carlo Analysis of Hot Electron Transport and Smpact Ionization in silicon 佐野, 伸行
Proceedings of the International Conference on Solid State Devices and Materials (SSDM-91) 456 (1991)
157. Monte Carlo Aralysis of Hot Eectron Transport and Impact Ionization in Si 佐野, 伸行
Japanese Journal of Applied Physics 30: 3662 (1991) Semantic Scholar
158. Electron transport and impact ionization in Si Nobuyuki Sano; Takahiro Aoki; Masaaki Tomizawa; Akira Yoshii
Physical Review B 41: 12122 (1990) Semantic Scholar
159. Monte Carlo analysis of ionization threshold in Si Nobuyuki Sano; Masaaki Tomizawa; Akira Yoshii
Applied Physics Letters 56: 653 (1990) Semantic Scholar
160. Physical Mechanism of Impact Ionization in Si : A Monte Carlo Analysis 佐野, 伸行
Proceedings of the International Workshop on VLSI Process and Device Modeling (VPAD-90) 34 (1990)

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1. 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) Sano, Nobuyuki (担当:分担執筆, 範囲:Space-Average Impurity-Limited Resistance and Self-Averaging in Quasi-1D Nanowires)
IEEE 2016年 (ISBN: 9781467386098)
2. TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Sano, Nobuyuki; Karasawa, Takahiko (担当:分担執筆, 範囲:Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction)
TRANS TECH PUBLICATIONS LTD 2011年1月
3. 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Nakanishi, Kohei; Uechi, Tadayoshi; Sano, Nobuyuki (担当:分担執筆, 範囲:Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition)
IEEE 2009年1月 (ISBN: 9781424456390)
4. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki (担当:分担執筆, 範囲:3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes)
WILEY-V C H VERLAG GMBH 2008年1月
5. 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 Yamada, Tatsuya; Sano, Nobuyuki (担当:分担執筆, 範囲:Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs)
IEEE 2007年1月 (ISBN: 9781424418916)
6. (INVITED) Impact Ionization in Submicron and Sub-0.1 Micron Si-MOSFET's 佐野, 伸行
Plenum 1996年1月
7. Nonlocality of Impact Ionization Processes under Inhomogeneous Electric Fields : A Full-Band Monte Carlo Approach 佐野, 伸行
1993年1月
8. Monte Corlo Simulation of Ionization Phenomena in Si-MOSFET's 佐野, 伸行
1991年1月
9. A Theoretical Study on Dielectric Breakdown 佐野, 伸行
1988年8月

1. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 II ~半導体ナノ構造でのランダム不純物~ 佐野, 伸行
電子情報通信学会シリコン材料・デバイス(SDM)研究会集会 2019年11月7日電子情報通信学会招待有り
2. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
3. Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells A. Lafuente-Sampietro; K. Yoshida; 秋本克洋; Sano, Nobuyuki; SAKURAI, TAKEAKI
The 29th Photovoltaic Science and Engineering Conference (PVSEC29) 2019年11月7日
4. Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET Sano,Nobuyuki
2019 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2019) 2019年9月4日 IEEE
5. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
Special Seminar at the School of Engineering and Architecture 2019年5月30日 University of Bologna 招待有り
6. Science and Education at the University of Tsukuba, Japan Sano,Nobuyuki
Special Seminar at the Department of Physics 2019年5月16日 University of Modena and Reggio-Emilia 招待有り
7. 微細構造デバイスシミュレーションにおける局所的な乱れによるポテンシャルゆらぎの物理的側面佐野,伸行
第65回応用物理学会春季学術講演会シンポジウム「デバイスシミュレーション技術の活用と将来展望」 2018年3月17日応用物理学会招待有り
8. モンテカルロ・デバイスシミュレーションの基本的側面と応用佐野,伸行
第3回CDMSI（ポスト「京」重点課題（７））シンポジウム 2017年12月5日招待有り
9. 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 ~ランダム不純物ばらつきと自己平均化~ 佐野,伸行
電子情報通信学会シリコン材料・デバイス(SDM)研究会集会 2017年11月9日シリコン材料・デバイス(SDM)研究会集会招待有り
10. Fundamental Aspects of Discrete Impurity Model for Nano-Scale Device Simulations Sano,Nobuyuki
Seminar on Noise and Reliability in Silicon Electronics 2017年11月1日 National Chiao Tung University 招待有り
11. Variability and Self-Average of Impurity-limited Resistance in Semiconductor Nanowires Sano,Nobuyuki
7th Annual World Congress of Nano Science & Technology-2017 2017年10月24日招待有り
12. Physical Issues in Device Modeling: Length-Scale, Disorder, and Phase Interference Sano, Nobuyuki
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2017年9月7日招待有り
13. Large Mobility Modulation Due to Discrete Impurities in Nanowires Sano, Nobuyuki
Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 held during the PRiME Joint Int Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society 2016年10月2日招待有り
14. Self-Consistent Monte-Carlo Simulations for Modern Electron Devices Sano,Nobuyuki
nternational Conference on Solid State Materials and Devices (SSDM-2016) 2016年9月26日招待有り
15. Monte Carlo Study of the long-range Coulomb interaction for Junctionless Transistors 佐野,伸行
International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
16. Effect of Impurity Scattering on Mobility in Si Nanowire Junctionless FETs 佐野,伸行
International Workshop on Computational Electronics (IWCE-17) 2014年6月3日 IWCE
17. Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System Abe, Shin-ichiro; Watanabe, Yukinobu; Shibano, Nozomi; Sano, Nobuyuki; Furuta, Hiroshi; Tsutsui, Masafumi; Uemura, Taiki; Arakawa, Takahiko
Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop 2011年9月19日
18. Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction Sano, Nobuyuki; Karasawa, Takahiko
International Symposium on Technology Evolution for Silicon Nano-Electronics 2010年6月3日
19. Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs Yamada, Tatsuya; Sano, Nobuyuki
International Semiconductor Device Research Symposium 2007年12月12日
20. 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki
15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors 2007年10月8日