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佐野伸行

Sano, Nobuyuki

数理物質系 , 教授
Institute of Pure and Applied Sciences , Professor

http://www.bk.tsukuba.ac.jp/~dev-phys/

オープンアクセス版の論文は「つくばリポジトリ」で読むことができます。

1. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Nonequilibrium Green’s Function Scheme Sano, Nobuyuki; Yoshida, Katsuhisa; Tsukahara, Kohei; Park, Gyutae
IEEE TRANSACTIONS ON ELECTRON DEVICES 72: 24 (2025)
2. Nonequilibrium Green's Function Formalism Applicable to Discrete Impurities in Semiconductor Nanostructures Sano, Nobuyuki
arXiv:2501.17285 [cond-mat.mes-hall] 1 (2025)
3. Shallow p-n Junctions under Discrete Impurities in Semiconductor Devices Sano, Nobuyuki
IEEE TRANSACTIONS ON ELECTRON DEVICES ED-71: 965 (2024) Semantic Scholar
4. Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carrier Sano, Nobuyuki
2023 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2023) 1 (2023)
5. 半導体デバイスモデリング講座佐野, 伸行
SONY Special Lecture (2022)
6. 半導体デバイスにおける物理モデリングとシミュレーションの現状とその意味佐野, 伸行
Sony Public Lecture (2022)
7. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Monte Carlo Simulation Scheme Sano, Nobuyuki; Fukui, Takayuki
IEEE TRANSACTIONS ON ELECTRON DEVICES 68: 5394 (2021) Semantic Scholar
8. Quantum kinetic equation for the Wigner function and reduction to the Boltzmann transport equation under discrete impurities Sano, Nobuyuki
PHYSICAL REVIEW E 104: (2021) Semantic Scholar
9. Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells Lafuente-Sampietro, Alban; Yoshida, Katsuhisa; Wang, Shenghao; Ishizuka, Shogo (+3 著者) SAKURAI, TAKEAKI
Solar Energy Materials and Solar Cells 223: 110948 (2020) Semantic Scholar
10. Potential application of p-i-n semiconductor capacitor with non-linear voltage-charge characteristic for secondary battery Yoshida, Katsuhisa; Sano, Nobuyuki
JOURNAL OF APPLIED PHYSICS 128: (2020) Semantic Scholar
11. Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Drift-Diffusion Simulation Scheme Sano, Nobuyuki; Yoshida, Katsuhisa; Tsukahara, Kohei; Park, Gyutae
IEEE TRANSACTIONS ON ELECTRON DEVICES 67: 3323 (2020) Semantic Scholar
12. Ambipolar device simulation based on the drift- diffusion model in ion-gated transition metal dichalcogenide transistors Ueda, Akiko; Zhang, Yijin; Sano, Nobuyuki; Imamura, HiroshiIwasa, Yoshihiro
npj Computational Materials 6: 24 (2020)
13. Monte Carlo simulation of random dopant fluctuation in C-V characteristics using image charge model and adequately determined length scale Chih-Wei, Yao; Sano, Nobuyuki; Watanabe, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS 58: (2019) Semantic Scholar
14. Polarization Effect due to Discreteness of Dopants in Nano-Scale MOSFETs Yoshida, Katsuhisa; Tsukahara, Kohei; Sano, Nobuyuki
IEEE Trans. Electron Dev. ED-66: 4343 (2019) Semantic Scholar
15. Physics of Discrete Impurities under the Frameworkof Device Simulations for Nanostructure Devices Sano, Nobuyuki; Yoshida, Katsuhisa; Yao, Chih-Wei; Watanabe, Hiroshi
Materials (Basel, Switzerland) 11: (2018) Semantic Scholar
16. Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy Shinji Saito; Masahiko Yoshiki; Shinya Nunoue; Nobuyuki Sano
JAPANESE JOURNAL OF APPLIED PHYSICS 56: 0210003 (2017) Semantic Scholar
17. Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands Syuta Honda; Kouhei Inuzuka; Takeshi Inoshita; Norio OtaNobuyuki Sano
JOURNAL OF PHYSICS D-APPLIED PHYSICS 47: (2014) Semantic Scholar
18. Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations Katsuhisa Yoshida; Toru Shibamiya; Nobuyuki Sano
APPLIED PHYSICS LETTERS 105: (2014) Semantic Scholar
19. ジャンクションレストランジスタにおけるNEGF法を用いたデバイスシミュレーション : 不純物散乱と遮蔽の影響の考察(プロセス・デバイス・回路シュミレーション及び一般) 植田, 暁子; Luisier, Mathieu; 吉田, 勝尚; 本多, 周太佐野, 伸行
Technical report of IEICE. SDM 113: 61 (2013)
20. Surface potential-based polycrystalline-silicon thin-film transistors compact model by Nonequilibrium approach Hiroyuki Ikeda; Nobuyuki Sano
IEEE Transactions on Electron Devices 60: 3417 (2013) Semantic Scholar

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1. 2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) Sano, Nobuyuki (担当:分担執筆, 範囲:Space-Average Impurity-Limited Resistance and Self-Averaging in Quasi-1D Nanowires)
IEEE 2016年 (ISBN: 9781467386098)
2. TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS Sano, Nobuyuki; Karasawa, Takahiko (担当:分担執筆, 範囲:Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction)
TRANS TECH PUBLICATIONS LTD 2011年1月
3. 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Nakanishi, Kohei; Uechi, Tadayoshi; Sano, Nobuyuki (担当:分担執筆, 範囲:Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition)
IEEE 2009年1月 (ISBN: 9781424456390)
4. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1 Uechi, Tadayoshi; Fukui, Takayuki; Sano, Nobuyuki (担当:分担執筆, 範囲:3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes)
WILEY-V C H VERLAG GMBH 2008年1月
5. 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 Yamada, Tatsuya; Sano, Nobuyuki (担当:分担執筆, 範囲:Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs)
IEEE 2007年1月 (ISBN: 9781424418916)
6. (INVITED) Impact Ionization in Submicron and Sub-0.1 Micron Si-MOSFET's 佐野, 伸行
Plenum 1996年1月
7. Nonlocality of Impact Ionization Processes under Inhomogeneous Electric Fields : A Full-Band Monte Carlo Approach 佐野, 伸行
1993年1月
8. Monte Corlo Simulation of Ionization Phenomena in Si-MOSFET's 佐野, 伸行
1991年1月
9. A Theoretical Study on Dielectric Breakdown 佐野, 伸行
1988年8月

21. Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carrier F.Hashimoto; T.Suzuki; H.Minari; N.Nakazaki; J.Komachi; Sano, N
2023 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2023) IEEE
22. キャリアの捕獲・励起過程を導入した自己無撞着モンテカルロデバイスシミュレーション佐野, 伸行
シリコン材料・デバイス(SDM)研究会集会電子情報通信学会招待有り
23. ナノデバイスのシミュレーョン：なぜ、モンテカルロ法か？佐野,伸行
第60回応用物理学会春季学術講演会シンポジウム「半導体モデリング・シミュレーションの現状と将来展望」用物理学会
24. 半導体デバイスにおける物理モデリングとシミュレーションの現状とその意味佐野, 伸行
ソニー講演会ソニーセミコンダクタソリューションズ招待有り